Improvement of Contact and Bonding Performance of Mg2Si/Mg2SiNi3 Thermoelectric Joints by Optimizing the Concentration Gradient of Mg
Shaoping Chen,Jie Chen,Wenhao Fan,Yaning Wang,Jingyun Guo,Yachao Wang,Yu Jiang,Rasha Abdullah Ahmed Al-Yusufi,Marhoun Ferhat
DOI: https://doi.org/10.1007/s11664-022-09477-y
IF: 2.1
2022-02-21
Journal of Electronic Materials
Abstract:Mg2SiNi3, is a topologically densely packed intermetallic compound (TCP-IMC) and an excellent diffusion barrier material between nickel and Mg2Si-based thermoelectric material. However, even a little migration of the Mg atom from Mg2Si to Mg2SiNi3 under the action of a driven force promotes the formation of an Mg deficiency region on the Mg2Si side, which destroys the balance of point defects and leads to performance deterioration. In this work, by adjusting the chemical potential of Mg across the MgxSi15Ni50/Mg2Si (x = 36, 50, 130) interface, the migration of Mg in thermoelectric material has been suppressed effectively. The results indicate that the contact performance and service stability of the Mg130Si15Ni50/Mg2Si interface has been improved by 50% compared to that of Mg36Si15Ni50/Mg2Si, which remains quite well after annealing at 400 ℃ for 480 h. TCP-IMC barrier with proper composition is a promising design for the manufacture of TEG interface to ensure its consistency in service especially under a large temperature difference.
engineering, electrical & electronic,materials science, multidisciplinary,physics, applied