The overheating effects in germanium quantum well with two subbands occupied

I. B. Berkutov,V. V. Andrievskii,Yu. A. Kolesnichenko,Yu. F. Komnik,O. A. Mironov
DOI: https://doi.org/10.1063/1.5049161
2018-08-01
Low Temperature Physics
Abstract:The charge carrier overheating effect was studied in the p-type Si0.4Ge0.6/Ge/Si0.4Ge0.6 heterostructure with two subband occupy. The temperature dependences of hole-phonon relaxation time τh-ph sat weak magnetic fields demonstrated transition of the 2D system from regime of “partial inelasticity” characterized by dependence τh-ph−1 ∝ T2 to regime of small-angle scattering, described by dependence τh-ph−1 ∝ T5 with temperature increase. But in higher magnetic fields the dependence τh-ph−1 ∝ T3 manifests itself on dependences τh-ph(Th-ph). The possible explanations of such dependences are discussed. PACS: 72.15.Lh Relaxation times and mean free path; 72.20. My Galvanomagnetic and other magnetotransport effects; 72.20. −i Conductivity phenomena in semiconductors and insulators.
physics, applied
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