Abstract:By solving the problem of very long test time on reliability qualification for Light-emitting Diode (LED) products, the accelerated degradation test with a thermal overstress at a proper range is regarded as a promising and effective approach. For a comprehensive survey of the application of step-stress accelerated degradation test (SSADT) in LEDs, the thermal, photometric, and colorimetric properties of two types of LED chip scale packages (CSPs), i.e., 4000 °K and 5000 °K samples each of which was driven by two different levels of currents (i.e., 120 mA and 350 mA, respectively), were investigated under an increasing temperature from 55 °C to 150 °C and a systemic study of driving current effect on the SSADT results were also reported in this paper. During SSADT, junction temperatures of the test samples have a positive relationship with their driving currents. However, the temperature-voltage curve, which represents the thermal resistance property of the test samples, does not show significant variance as long as the driving current is no more than the sample's rated current. But when the test sample is tested under an overdrive current, its temperature-voltage curve is observed as obviously shifted to the left when compared to that before SSADT. Similar overdrive current affected the degradation scenario is also found in the attenuation of Spectral Power Distributions (SPDs) of the test samples. As used in the reliability qualification, SSADT provides explicit scenes on color shift and correlated color temperature (CCT) depreciation of the test samples, but not on lumen maintenance depreciation. It is also proved that the varying rates of the color shift and CCT depreciation failures can be effectively accelerated with an increase of the driving current, for instance, from 120 mA to 350 mA. For these reasons, SSADT is considered as a suitable accelerated test method for qualifying these two failure modes of LED CSPs.

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Planning of step-stress accelerated degradation test based on the inverse Gaussian process

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Optimal step-stress accelerated degradation test plans for inverse Gaussian process based on proportional degradation rate model

Optimal Design for Step-Stress Accelerated Test with Random Discrete Stress Elevating Times Based on Gamma Degradation Process

Optimal design of step-stress accelerated degradation test oriented by nonlinear and distributed degradation process

Optimal design for step-stress accelerated degradation testing with competing failure modes

Optimal step stress accelerated degradation tests with the bivariate inverse Gaussian process

Multiple stresses optimization design of constant-stress accelerated degradation test based on Wiener process

Step-stress accelerated degradation test planning based on Wiener process with correlation

Optimal Constant-Stress Accelerated Degradation Test Plans Using Nonlinear Generalized Wiener Process

Optimal design of constant‐stress accelerated degradation tests based on the Wiener process with manufacturing batches heterogeneity and individual differences

Optimal designs of accelerated degradation tests with random shock failures and measurement errors

Accelerated Degradation Test Planning Using the Inverse Gaussian Process

Semiparametric evaluation of first‐passage distribution for step‐stress accelerated degradation tests

Optimum step-stress accelerated degradation test for Wiener degradation process under constraints

Design of an optimal plan for an accelerated degradation test: a case study

Optimal Design of Accelerated Degradation Failure Mechanism Consistency Discriminant Test Based on D-Optimality

Photometric and Colorimetric Assessment of LED Chip Scale Packages by Using a Step-Stress Accelerated Degradation Test (SSADT) Method

Investigation of Step-Stress Accelerated Degradation Test Strategy for Ultraviolet Light Emitting Diodes

Reliability modeling and statistical inference of accelerated degradation data with memory effects and unit-to-unit variability