Abstract:As tellurides and selenides of Bismuth are extensively used thermoelectric materials in the low-temperature range with refrigeration application, A concerted effort is put forth to boost the ZT by co-doping the pristine Bi 2 Se 3 with antimony (Sb) on cation end and tellurium (Te) on anion side of the compound. The double sintered solid-state reaction method is employed in the preparation of Bi 2 Se 3 and (Bi 1− x Sb x ) 2 Se 2.7 Te 0.3 polycrystalline pellets, with x = 0.02, 0.04, and 0.06. The sample exhibits a rhombohedral structure with the space group of R m. FESEM and EDAX analysis are used to confirm surface morphology and elemental composition of the produced samples. The thermoelectric measurements for the pristine and co-doped samples were conducted by the physical property measurement system as well as a considerable increase in the Seebeck coefficient of − 115 μV/K is observed for 0.02 doping of the Sb which is 4.2 times greater than as for pristine (S = − 28 μV/K). Higher concentration doping ( x = 0.04, 0.06) has not reflected any Seebeck coefficient advancement. In contrast, the lowest total thermal conductivity at a low-temperature regime (< 50 K) is observed for x = 0.06 doping concentration which at near room temperature increases beyond the pristine thermal conductivity; whereas, x = 0.02, 0.04 doping concentration shows a decrement in total thermal conductivity at low, at room temperature region the values are almost equivalent to that of pristine. The co-doped samples' electrical resistivity is substantially less than pristine sample. The highest power factor of 3 × 10 –4 μW/mK 2 is obtained for the x = 0.02 sample. The highest ZT value for the x = 0.02 sample is almost 28 times more than a pristine sample. We conducted a study where we combined experimental and DFT methods to investigate thermoelectric properties incorporated into pristine and doped with antimony and tellurium on Bi 2 Se 3 . We have employed this combination to investigate the partial density of states, Seebeck coefficient, power factor using the Boltzmann transport equation. Theoretical thermoelectric data were derived and compared to experimental observations. Hence, using combined experimental and theoretical investigations helps to predict with higher accuracy of thermoelectric properties of semiconducting materials.

Study and Characterization of Thermoelectric Material (TE) Bismuth Antimony Telluride

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Effect of Doping and Annealing on Thermoelectric Properties of Bismuth Telluride Thin Films

Microstructure and thermoelectric performance evaluation of p-type (Bi, Sb)2Te3 materials synthesized using mechanical alloying and spark plasma sintering process

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A comprehensive experimental and DFT analysis on thermoelectric properties of Sb, Te co-doped Bi2Se3 polycrystals

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Preparation of Bismuth Telluride Compound Semiconductors Through Thin Film Reactions