Abstract:Reliable transfer processes that enable manipulation of two-dimensional (2D) materials, e.g., transition metal dichalcogenides (TMDCs) and MXenes, from one substrate to another has been a necessity for successful device fabrication. With both mechanical exfoliation and chemical vapor deposition (CVD) widely used, a versatile, clean, deterministic, and yet simple transfer technique is highly needed. To address such need, we developed a transfer method that takes advantage of wettability contrast between interfaces without the use of sacrificial layers or chemical processes. More importantly, a setup was developed to carry out this transfer method with high sample selectivity and fine control of the position and orientation of transferred TMDC crystals, a feature required for fabrication of the devices based on vertical 2D heterostructures. Using both exfoliated and CVD grown materials and subsequent atomic force microscopy (AFM), photoluminescence (PL), confocal Raman and tip enhanced Raman spectroscopy (TERS) characterization, we ascertained the quality of interfaces resulting from the transfer process while preserving excellent 2D material integrity. PL and TERS maps revealed nanometer-scale heterogeneities in the interfaces of fabricated heterostructures, which should enable further perfection of the transfer technique. TERS/TEPL information were employed to identify areas suitable for nanodevice fabrication, making the reported transfer and characterization methods ideal for making high quality assembly of 2D heterostructure more accessible, which should facilitate exploration of vertical 2D heterostructures for applications in electronics, batteries, solar cells, and twistronics.

Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

Wafer-scale characterization for two-dimensional material layers

Multiple Conformal-Contact Transfer of Large-Area Crack-Free Transition Metal Dichalcogenide Stacks

Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Controlled Growth of Single‐Crystal Graphene Wafers on Twin‐Boundary‐Free Cu(111) Substrates

The Atomic Drill Bit: Precision Controlled Atomic Fabrication of 2D Materials

Wafer Scale Growth of Single Crystalline Two-Dimensional van der Waals Materials

Non-epitaxial single-crystal 2D material growth by geometric confinement

Mechanical exfoliation of non-layered metal oxides into ultrathin flakes

The Coalescence Behavior of Two-Dimensional Materials Revealed by Multiscale in Situ Imaging During Chemical Vapor Deposition Growth.

Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control

Growth of 2D Materials at the Wafer Scale

Large-area transfer of two-dimensional materials free of cracks, contamination and wrinkles via controllable conformal contact

Millimeter-Scale Exfoliation of Hbn with Tunable Flake Thickness for Scalable Encapsulation

A peeling approach for integrated manufacturing of large mono-layer h-BN crystals

Controlling and visualizing fracture of 2D crystals by wrinkling

Oriented lateral growth of two-dimensional materials on c -plane sapphire

Bridging Synthesis and Controllable Doping of Monolayer 4 In. Length Transition-Metal Dichalcogenides Single Crystals with High Electron Mobility

Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates

Surface-Confined Two-Dimensional Crystal Growth on a Monolayer

Facile fabrication of 2D material multilayers and vdW heterostructures with multimodal microscopy and AFM characterization