Structural Correlation of Phonon Dynamics in Bismuth and Tellurium for the Formation of Bismuth Telluride, Using Ultrafast Transient Absorption Spectroscopy

Saurabh K. Saini,sharma,Nikita Vashistha,Lavi Tyagi,Mahesh Kumar,Prince sharma
DOI: https://doi.org/10.2139/ssrn.3989486
2021-01-01
SSRN Electronic Journal
Abstract:Variation in the structural properties of any materials may directly affect the carrier and phonon dynamics. We report the phonon and carrier dynamics of thin films of Bi, Te, and Bi 2 Te 3 formed on a Si (100) wafer through thermal evaporation. Although the grain sizes of tellurium thin films are less than those of Bi and Bi 2 Te 3 , they have a considerable influence on charge carrier and phonon dynamics. We employed ultrafast transient absorption spectroscopy (UFTS) with a variety of excitation energy to analyse the comprehensive charge carrier and phonon dynamics in the visible and near-infrared (NIR) regions. The frequency of phonon oscillations in Bi is determined to be 2.31THz at 1.9eV excitation and 1.1THz at 1.6eV excitation. Field emission secondary electron microscopy (FESEM) and X-ray diffraction (XRD) are used to analyse the shape and structure of the deposited samples.
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