A 1.8V Output RF Energy Harvester at Input Available Power of −20 dBm

Qing Cui,Changchun Zhang,Yufeng Guo,Yi Zhang,Ying Zhang,Feng Yuan
DOI: https://doi.org/10.1109/icam.2018.8596407
2018-11-01
Abstract:This paper presents a RF energy harvester (RFEH) operating at a frequency of 900 MHz in $0.18-1\mu\text{m}$ CMOS technology. It mainly consists of an RF rectifier, a low dropout voltage regulator (LDO), and a self-starting circuit. A level-l hybrid forward and backward compensation technique is employed for the RF rectifier to lower the equivalent threshold voltage of MOS transistors, which can optimize the sensitivity of the RFEH and the power conversion efficiency (PCE). The LDO is adopted at the output of the RFEH to reduce the output voltage ripple remarkably. The self-starting circuit makes the RFEH perform the energy harvesting without the assistance of external supply. Simulation results show that the RFEH can produce an output voltage of 1.8V and achieve a PCE of 41.2% at an input available power of −20dBm.
What problem does this paper attempt to address?