Conductive mechanism and the enhancement high-power electrical properties of Mn-modified Bi(Sc3/4In1/4)O3–PbTiO3–Pb(Mg1/3Nb2/3)O3 high temperature piezoelectric ceramics

Lei Wang,Tian-Long Zhao,Xianying Dai,Jianjun Song,Shuxiang Dong
DOI: https://doi.org/10.1007/s10854-019-01093-7
2019-03-13
Abstract:<p>In this research, we report the improved high-power electrical properties and the conductive mechanism of the 0.40Bi(Sc<sub>3/4</sub>In<sub>1/4</sub>)O<sub>3</sub>–0.58PbTiO<sub>3</sub>–0.02Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>–<em>x</em>MnO<sub>2</sub> (BSI–PT–PMN–<em>x</em>Mn, <em>x</em> = 0.0–0.8) system synthesized by a modified two-step solid state reaction method. A pure perovskite phase has been detected by the X-ray diffraction analysis of the BSI–PT–PMN–<em>x</em>Mn ceramics, and the mechanical quality factor <em>Q</em><sub><em>m</em></sub> has been found to increase from 28 to 210 with Mn content increasing from 0.0 to 0.8. The DC resistivity measurement indicated that the resistivity of the BSI–PT–PMN–<em>x</em>Mn ceramics increases firstly, reaching the maximum at <em>x</em> = 0.4, and then decreases with more Mn modified. The conduction behavior can be described by the intrinsic charge carriers conduction mechanism and extrinsic semiconductor conductive mechanism in different temperature range. The high DC resistivity over 10<sup>9</sup> Ω cm at 300 °C together with the good electrical properties of piezoelectric constant <em>d</em><sub>33</sub> 336 pC/N, planar electromechanical coupling factor <em>k</em><sub>p</sub> 42.8%, mechanical quality factor <em>Q</em><sub><em>m</em></sub> 120 and Curie temperature <em>T</em><sub>c</sub> 414 °C of the BSI–PT–PMN–0.4Mn ceramics makes it promising candidates for high temperature high-power piezoelectric applications.</p>
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