Abstract:In this work, boron-doped ZnO (ZnO:B) thin films grown by low-pressure chemical vapor deposition (LPCVD) on ITO glass substrates with film thicknesses of 1, 2, and 3 µm are analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic-force microscopy (AFM), cathodoluminescence (CL), and light transmittance measurements. The effects of boron doping on the grain crystallization, grain sizes, film strains, surface texture, and light transmittance of ZnO:B thin films are studied from the analysis of these measurements. XRD results show that ZnO:B and undoped ZnO thin films both have the largest percentage of the (110) crystalline grains which form ridge-like structures at the surfaces of the thin films. These ridge-like structures of (110) grains provide sharper surface textures than the polygon structures of (100) grains. Hence, ZnO:B and undoped ZnO thin films grown on ITO glass substrates both have good-quality surface textures which can provide light-trapping functions for solar-cell applications. In addition, the surfaces of ZnO:B thin films are less sharp and rough than those of undoped ZnO thin films due to their smaller grain sizes. Boron-doping decreases the ZnO grain sizes and reduces the surface textures of ZnO thin films grown on ITO glass substrates. Since ZnO:B thin films have smaller average grain sizes than undoped ZnO thin films, ZnO:B thin films have larger quantum-size effects and hence larger band-gap energies and shorter CL emission wavelengths. Furthermore, thicker films have more ZnO(110) grains with ridge-like structures and have better surface textures which can provide better light trapping than thinner ones. However, thicker films are shown to have poorer optical transparency. The results of this work provide useful information for growth of textured well-faceted ZnO:B films on ITO glass substrates that can potentially be utilized for various applications, such as solar cells.

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