Abstract:Silicon dioxide passivated back-to-back Schottky diodes were fabricated by depositing Ni on rf plasma-assisted molecular beam epitaxy-grown GaN utilizing a unique double buffer layer structure. In this study, both low-frequency noise and deep-level transient Fourier spectroscopy (DLTFS) measurements were conducted to characterize the effects of intermediate-temperature buffer layers (ITBLs) on the hot-electron hardness of GaN Schottky diodes. Device A was fabricated with a double buffer layer consisting of a thin AlN high-temperature buffer layer (HTBL) and a GaN ITBL. Device B consists of a single AIN HTBL. Low-frequency noise results measured from the as-deposited devices show a significant reduction in the noise level, over an order of magnitude, for device A indicative of the substantial reduction in the trap density in the GaN thin films deposited on ITBLs. Hot-electron hardness of the devices was examined through the application of high voltage stress. The increase in the low-frequency noise for device A after voltage stressing is much smaller and no detectable deep-level is observed by both low-frequency noise and DLTFS techniques. However, both characterization techniques indicate a generation of a deep-level at 780 meV below the conduction band edge for device B. Based on detailed optical and electrical characterizations of the samples, the improved device properties for device A are attributed to the relaxation of residue strain in the epilayer during growth due to the utilization of ITBL. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

The Effect of Growth Temperature on the Electrical-Properties of Alinas/Inp Grown by Molecular-Beam Epitaxy and Metal-Organic Chemical-Vapor-Deposition

Effects of TMAl predose time on the quality of submicron-thick GaN on Si

Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10–13) AlN Grown on Sapphire by HVPE

Effect of Buffer Temperature on Epilayer Morphology for GaN on Si(111)

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Effects of growth temperature for in-situ deposited SiNx interlayer on structural and optical properties of semipolar ( 11 2 ̄ 2 ) AlGaN films

The role of AlN thickness in MOCVD growth of N-polar GaN

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

Effect of different buffer layers on the quality of InGaN layers grown on Si

Low temperature 2D GaN growth on Si (111) 7x7 assisted by hypethermal nitrogen ions

Low‐frequency Noise Characterizations on Ni/GaN Schottky Diodes Deposited on Intermediate‐temperature Buffer Layers

Novel Method for Improving Process Repeatability of the AlN Buffer Layer