Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Raman study of the substrate influence on graphene synthesis using a solid carbon source via rapid thermal annealing

Characterization Of Graphene Grown On Bulk And Thin Film Nickel

Non-vacuum growth of graphene films using solid carbon source

Interfacial monolayer graphene growth on arbitrary substrate by nickel-assisted ion implantation

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Preparation of few-layer graphene by annealing Ni film with low carbon content deposited by direct current magnetron sputtering

Raman Nanometrology of Graphene: Temperature and Substrate Effects

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

Effect of substrate polishing on the growth of graphene on 3C–SiC(111)/Si(111) by high temperature annealing

High-Quality Graphene Synthesis on Amorphous SiC Through A Rapid Thermal Treatment

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Direct growth of bilayer graphene on SiO₂ substrates by carbon diffusion through nickel.

Growth and Characterization of Graphene on Sio2/Si Substrate

Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study

Raman spectroscopy of epitaxial graphene on a SiC substrate

Effects of Annealing Parameters on Epitaxial Graphene on SiC Substrates

Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms

Transfer-Free Layered Graphene on Silica via Segregation through a Nickel Film for Electronic Applications

Electron-beam assisted selective growth of graphenic carbon thin films on SiO2/Si and quartz substrates

Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study

Ni‐Catalyzed Growth of Graphene Layers During Thermal Annealing: Implications for the Synthesis of Carbon‐Supported PtNi Fuel‐Cell Catalysts