Thermal annealing induced recovery of damaged surface layer for enhanced ferroelectricity in Bi-based ceramics

Hyunwook Nam,Sangwook Kim,Gopal Prasad Khanal,Ichiro Fujii,Shintaro Ueno,Satoshi Wada
DOI: https://doi.org/10.7567/1347-4065/ab37b5
IF: 1.5
2019-08-21
Japanese Journal of Applied Physics
Abstract:The role of thermal annealing treatment in the enhancement of the piezoelectric and ferroelectricproperties of 0.3BaTiO 3 –0.1Bi(Mg 1/2 Ti 1/2 )O 3 –0.6BiFeO 3 (0.3BT–0.1BMT–0.6BF) lead-freepiezoelectric ceramics was investigated. Mechanical stress induced by ceramic processing such aspolishing and cutting could severely affect the electrical properties of 0.3BT–0.1BMT–0.6BFlead-free piezoelectric ceramics. In order to explore the impact of mechanical processing on theirelectrical properties, polished and cut samples were thermally annealed to remove damaged surfacelayers. It was found that the remanent polarization ( P r ;27.27 μ C cm −2 ) and large-fieldpiezoelectric coefficient ( d 33 *; 334 pm V −1 ) for the thermally annealed sample were remarkablyenhanced in comparison to those of the polished sample ( P r of17.57 μ C cm −2 and
physics, applied
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