An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

Lei Zhao,Zhen Fan,Shengliang Cheng,Lanqing Hong,Yongqiang Li,Guo Tian,Deyang Chen,Zhipeng Hou,Minghui Qin,Min Zeng,Xubing Lu,Guofu Zhou,Xingsen Gao,Jun‐Ming Liu
DOI: https://doi.org/10.1002/aelm.201900858
IF: 6.2
2019-12-15
Advanced Electronic Materials
Abstract:<p>The rapid development of artificial intelligence technology has led to the urge for artificial optoelectronic synapses with visual perception and memory capabilities. A new type of artificial optoelectronic synapse, namely a photoelectric memcapacitor, is proposed and demonstrated. This photoelectric memcapacitor, with a planar Au/La<sub>1.875</sub>Sr<sub>0.125</sub>NiO<sub>4</sub>/Au metal–semiconductor–metal structure, displays a complementary optical and electrical modulation of capacitance, which can be attributed to the charge trapping/detrapping‐induced Schottky barrier variation. It further exhibits versatile synaptic functions, such as photonic potentiation/electric depression, paired‐pulse facilitation, short‐/long‐term memory, and "learning‐experience" behavior. Moreover, the photoplasticity of the memcapacitor can be modulated by varying the frequency of applied AC voltage, thus enabling self‐adaptive optical signal detection and mimicry of interest‐modulated human visual memory. Therefore, it represents a new paradigm for artificial optoelectronic synapses and opens up opportunities for developing low‐power humanoid optoelectronic devices.</p>
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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