Abstract:<math> β</math>-Gallium oxide (<math> β - G a 2 O 3</math>) is an emerging wide bandgap semiconductor with potential applications in power and RF electronic systems. Previous theoretical calculation on a two-dimensional electron gas (2DEG) in <math> β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3</math> heterostructures, taking only polar optical and remote impurity scattering into account, shows improved mobility compared to bulk <math> β - G a 2 O 3</math>. However, the experimental results in 2DEGs have not achieved the predicted mobility values. In this work, we perform more comprehensive calculations to study the low field 2DEG transport properties in the <math> β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3</math> heterostructures. A self-consistent Poisson–Schrödinger simulation of a heterostructure is used to obtain the sub-band energies and the wavefunctions in the quantum well. The phonon dispersion is calculated based on the ab initio methods under the density functional theory and density functional perturbation theory frameworks. The different scatterings that are included in the calculation are due to phonons (polar and non-polar), remote impurities, the alloy disorder, and interface roughness. We include a full dynamic screening of polar optical phonons. We report the temperature dependent low-field electron mobility as a function of 2DEG density. The overall mobility is found to be increasing with electron density with an exception at low density where the antiscreening of LO phonons reduces mobility. The effect of spacer thickness, aluminum fraction, and roughness parameters on mobility is shown to be critically important. The effect of the confinement direction on 2DEG mobility is found to be small and comparable to bulk. A comparison of calculated mobility values with experimentally reported data shows a good agreement.

Electron scattering analysis in 2DEG in sputtering-grown MgZnO/ZnO heterostructure

Mobility Characteristics of ZnMgO/ZnO Heterostructures with Screening Effects

The Effect of Dislocation and Interface-Roughness Scattering on Electron Mobility in the MgZnO/ZnO Heterostructure

Electron Transport in Znmgo/Zno Heterostructures

Electrical Transport Properties in ZnO Bulk, c/ZnO and ZnMgO/ZnO/ZnMgO Heterostructures

Origin and Transport Properties of Two-Dimensional Electron Gas at Znmgo/Zno Interface Grown by Movpe

Effects of Surface States on Two-Dimensional Electron Gas in ZnMgO/ZnO Heterostructures

Two-Dimensional Electron Gas in Zn-Polar Znmgo/Zno Heterostructure Grown by Metal-Organic Vapor Phase Epitaxy

Enhancement of two-dimensional electron-gas properties by Zn polar ZnMgO/MgO/ZnO structure grown by radical-source laser molecular beam epitaxy

Two-Dimensional Electron Gas in Znmgo/Zno Heterostructures

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Magneto-transport Study on the Two Dimensional Electron Gas in ZnMgO/ZnO Heterostructure Grown by MOVPE

Two-dimensional Electron Gas Related Emissions in ZnMgO/ZnO Heterostructures

Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3 heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Electron scattering mechanisms in polycrystalline sputtered zinc tin oxynitride thin films

Analysis of electrical performance of MgZnO/ZnO high electron mobility transistor

Carrier Tuning of 2D Electron Gas in Field-Effect Devices Based on Al2O3/ZnO Heterostructures.

The Origin of Two-dimensional Electron Gas in Zn$_{1-x}$Mg$_x$O/ZnO Heterostructures

High-mobility two-dimensional electron gas in $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructures

Mobility limitations due to dislocations and interface roughness in AlGaN/AlN/GaN heterostructure