Antisymmetric Magnetoresistance in a Van Der Waals Antiferromagnetic/Ferromagnetic Layered MnPS3/Fe3GeTe2 Stacking Heterostructure.
Guojing Hu,Yuanmin Zhu,Junxiang Xiang,Tzu-Yi Yang,Meng Huang,Zhe Wang,Zhi Wang,Ping Liu,Ying Zhang,Chao Feng,Dazhi Hou,Wenguang Zhu,Meng Gu,Chia-Hsiu Hsu,Feng-Chuan Chuang,Yalin Lu,Bin Xiang,Yu-Lun Chueh
DOI: https://doi.org/10.1021/acsnano.0c05252
IF: 17.1
2020-01-01
ACS Nano
Abstract:The presence of two-dimensional (2D) layer-stacking heterostructures that can efficiently tune the interface properties by stacking desirable materials provides a platform to investigate some physical phenomena, such as the proximity effect and magnetic exchange coupling. Here, we report the observation of antisymmetric magnetoresistance in a van der Waals (vdW) antiferromagnetic/ferromagnetic (AFM/FM) heterostructure of MnPS3/Fe3GeTe2 when the temperature is below the Neel temperature of MnPS3. Distinguished from two resistance states in conventional giant magnetoresistance, the magnetoresistance in the MnPS3/Fe3GeTe2 heterostructure exhibits three states, of high, intermediate, and low resistance. This antisymmetric magnetoresistance spike is determined by an unsynchronized magnetic switching between the AFM/FM interface layer and the bulk of Fe3GeTe2 during magnetization reversal. Our work highlights that the artificial vdW stacking structure holds potential to explore some physical phenomena and spintronic device applications.