Abstract:In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a research focus of graphene due to its predicted fascinating properties such as bandgap opening and magnetism, which hence has ignited the attempt of experimentally growing such in-plane two-dimensional (2D) hybrid materials. Many previous researches demonstrated the synthesis of such heterostructures on Cu foils via chemical vapor deposition (CVD) process. The obtained 2D hybrid materials would offer a possibility for fabricating atomically thin electronic devices. However, many fundamental issues are still unclear, including the in-plane atomic continuity, the edge type, and the electronic properties at the boundary of hybridized h-BN and graphene domain. To clarify these issues, we report the syntheses of h-BN-G monolayer heterostructures on strongly coupled Rh(111) substrate and weakly coupled Ir(111) substrate via a two-step growth process in an ultrahigh vacuum (UHV) system, respectively. With the aid of scanning tunneling microscopy (STM), it is revealed that graphene and h-BN could be linked together seamlessly on an atomic scale at the linking boundaries. More importantly, we find that the atomically sharp zigzag-type boundaries dominate the patching interface between graphene and h-BN as demonstrated by atomic-scale STM images. To understand the physical origin of the atomic linking of the h-BN-G heterostructures, we also perform density functional theory (DFT) calculations, including geometry optimizations and binding energy calculations for different kinds of linking interfaces. The calculated results reconfirm that graphene prefers to grow on the h-BN domain edges and form zigzag linking boundaries. Besides the atomic structures on the linking interfaces, the electronic characteristics are also of particular importance. It is worth noting that the substrates coupled strongly with graphene by pi-d orbital hybridization (such as Rh(111) and Ru(0001)), lead to downward shift of graphene pi-bands away from the Fermi level, or decay of the intrinsic electronic structure of graphene. In this regard, the influence of h-BN on the electronic property of graphene is hard to identify on such h-BN-G heterostructures. The weakly coupled Ir(111) is chosen to be a perfect substrate to investigate the interface electronic properties of h-BN-G heterostructure due to the absence of substrate electronic doping effect. Scanning tunneling spectroscopy studies indicate that the graphene and h-BN tend to exhibit their own intrinsic electronic features near the linking boundaries on Ir(111). Therefore, the present work offers a deep insight into the h-BN-G boundary structures and the effect of adlayer-substrate coupling both geometrically and electronically.

Theoretical Investigation of Piezoelectric Properties of Graphene/Hexagonal Boron Nitride Hybrid Structures

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Piezoelectricity in monolayer hexagonal boron nitride

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Mechanical Properties of Hybrid Graphene and Hexagonal Boron Nitride Sheets As Revealed by Molecular Dynamic Simulations

Polarization in the van der Waals–bonded graphene/hBN heterostructures with triangular pores

Strain-tunable band gap in graphene/h-BN hetero-bilayer

Elastic Properties of Hybrid Graphene/Boron Nitride Monolayer

Hexagonal Boron Nitride–Graphene Heterostructures: Synthesis and Interfacial Properties

Periodic buckling patterns of graphene/hexagonal boron nitride heterostructure.

Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures

Band Gap Modulation by Two-Dimensional h-BN Nanostructure

Strain-engineering of band gaps in piezoelectric boron nitride nanoribbons

First principle study on the transition of electronic, mechanic and piezoelectric property of hexagonal Boron Nitride nanotube

Direct observation of the band structure in bulk hexagonal boron nitride

Scanning tunneling microscopy study of in-plane graphene-hexagonal boron nitride heterostructures

Mechanical behaviour of 2D hybrid structure fabricated by doping graphene with triangular h-BN cells

Electric Field Effect of Sliding Graphene/hexagonal Boron Nitride Heterobilayer

Electrical properties and applications of graphene, hexagonal boron nitride (h-BN), and graphene/h-BN heterostructures

Interface Engineering Of Electronic Properties Of Graphene/Boron Nitride Lateral Heterostructures

Strain induced tunable band gap and optical properties of graphene on hexagonal boron nitride