Abstract:We present a new efficient way to perform hybrid density functional theory (DFT)-based electronic structure calculations. The new method uses an interpolative separable density fitting (ISDF) procedure to construct a set of numerical auxiliary basis vectors and a compact approximation of the matrix consisting of products of occupied orbitals represented in a large basis set such as the planewave basis. Such an approximation allows us to reduce the number of Poisson solves from [Formula: see text] to [Formula: see text] when we apply the exchange operator to occupied orbitals in an iterative method for solving the Kohn-Sham equations, where Ne is the number of electrons in the system to be studied. We show that the ISDF procedure can be carried out in [Formula: see text] operations, with a much smaller preconstant compared to methods used in existing approaches. When combined with the recently developed adaptively compressed exchange (ACE) operator formalism, which reduces the number of times the exchange operator needs to be updated, the resulting ACE-ISDF method significantly reduces the computational cost associated with the exchange operator by nearly 2 orders of magnitude compared to existing approaches for a large silicon system with 1000 atoms. We demonstrate that the ACE-ISDF method can produce accurate energies and forces for insulating and metallic systems and that it is possible to obtain converged hybrid functional calculation results for a 1000-atom bulk silicon within 10 min on 2000 computational cores. We also show that ACE-ISDF can scale to 8192 computational cores for a 4096-atom bulk silicon system. We use the ACE-ISDF method to geometrically optimize a 1000-atom silicon system with a vacancy defect using the HSE06 functional and computes its electronic structure. We find that that the computed energy gap from the HSE06 functional is much closer to the experimental value compared to that produced by semilocal functionals in the DFT calculations.

Efficient calculation of ionization coefficients in silicon from the energy distribution function

Calculation of the properties of electron transport through linear silicon atomic chain

Tight-binding Calculation of Ionization Potentials of Small Silicon Clusters

Monte Carlo Simulation of Electron Transport in Silicon Carbide

Interpolative Separable Density Fitting Decomposition for Accelerating Hybrid Density Functional Calculations with Applications to Defects in Silicon

Electron-impact ionization of Si IV-VIII relevant for inertial confinement fusion

Efficient calculation of carrier scattering rates from first principles

Electron-impact ionization of Si IV-VIII in hot plasmas

Formation energy of intrinsic defects in silicon from the Galitskii-Migdal formula

High-accuracy calculation of nonrelativistic Compton profile for H-like ions

Multiconfiguration Dirac–Hartree–Fock Calculations for Intercombination Lines in Silicon-Like Ions

Accurate Ionization Potential of Semiconductors from Efficient Density Functional Calculations

Low Rank Approximation Method for Efficient Green's Function Calculation of Dissipative Quantum Transport

Excitation and recombination studies with silicon and sulphur ions at an EBIT

Efficient Full-Frequency GW Calculations Using a Lanczos Method

Calculation of solid–liquid interfacial free energy of silicon based on classical nucleation theory

Abinitio Calculation of Pressure Coefficients of Band-Gaps of Silicon - Comparison of the Local-Density Approximation and Quasiparticle Results

Perturbation Theory Made Efficient and Effective for Predictions of Ionization Potential and Electron Affinity.

Orbital-free extension to Kohn-Sham density functional theory equation of state calculations: Application to silicon dioxide

Heat transport in silicon from first-principles calculations

Consistent Wide-Range Equation of State of Silicon by a Unified First-Principles Method