Tight-binding Calculation of Ionization Potentials of Small Silicon Clusters

JJ ZHAO,XS CHEN,Q SUN,FQ LIU,GH WANG
DOI: https://doi.org/10.1016/0375-9601(94)01005-f
IF: 2.707
1995-01-01
Physics Letters A
Abstract:The size dependence of ionization potentials (IPs) of silicon clusters is studied using a localized orbital theory on the basis of the tight-binding approximation. The geometric structures of the silicon clusters are from the theoretical results of the force field model, and the hopping integral and overlap integral in the tight-binding Hamiltonian matrix are obtained from the best fitted formula for the Slater-Koster parameters. It has been found that our results conform to experiments much better than the previous LDA calculation and the estimation of the spherical droplet model. The local maximum of the IPs for Si10 is obtained, corresponding to the magic number behaviour observed by other experimental means. The structural isomer effect and relaxation effect on the IPs of the silicon clusters are also discussed.
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