Low-frequency lattice phonons in halide perovskites explain high defect tolerance toward electron-hole recombination

Weibin Chu,Qijing Zheng,Oleg V Prezhdo,Jin Zhao,Wissam A Saidi,Oleg V. Prezhdo,Wissam A. Saidi

DOI: https://doi.org/10.1126/sciadv.aaw7453

IF: 13.6

2020-02-14

Science Advances

Abstract:Low-frequency lattice phonons make halide perovskites defect tolerant.

multidisciplinary sciences

What problem does this paper attempt to address?

Multifaceted nature of defect tolerance in halide perovskites and emerging semiconductors

Irea Mosquera-Lois,Yi-Teng Huang,Hugh Lohan,Junzhi Ye,Aron Walsh,Robert L. Z. Hoye

2024-08-30

Abstract:Lead-halide perovskites (LHPs) have shot to prominence as efficient energy conversion materials that can be processed using cost-effective fabrication methods. A widely-quoted reason for their exceptional performance is their ability to tolerate defects, enabling long charge-carrier lifetimes despite high defect densities. Realizing defect tolerance in broader classes of materials would have a substantial impact on the semiconductor industry. Significant effort has been made over the past decade to unravel the underlying origins of defect tolerance to design stable alternatives to LHPs comprised of nontoxic elements. However, it has become clear that understanding defect tolerance in LHPs is far from straightforward. This review discusses the models proposed for defect tolerance in halide perovskites, evaluating the experimental and theoretical support for these models, as well as their limitations. We cover attempts to apply these models to identify materials beyond the lead-halide system that could also exhibit defect tolerance, and the successes and pitfalls encountered over the past decade. Finally, a discussion is made of some of the important missing pieces of information required for a deeper understanding and predictive models that enable the inverse design of defect tolerant semiconductors.

Materials Science,Applied Physics
An explanation for high defect tolerance in metal halide perovskite quantum dots

Yu Cui,Xiao-Yi Liu,Jia-Pei Deng,Zhi-Qing Li,Zi-Wu Wang

DOI: https://doi.org/10.1002/pssr.202100016

2020-12-08

Abstract:We propose Auger-like process assisted by quantum defects in metal halide perovskite quantum dots, where a charge carrier in the ground state of the quantum dot is trapped by quantum defects, resulting in another charge carrier in defect is excited and returns back to the ground state of the quantum dot. We find that the whole process is on the femtosecond scale. More importantly, the process is independent of the depth and species of the defects, which is in good agreement with the recent theoretical prediction using ab initio nonadiabatic molecular dynamics simulation. This Auger-like process may provide a potential explanation of high defect tolerance in metal halide perovskite materials.

Mesoscale and Nanoscale Physics
Interstitals as non-radiative recombination centers for all-inorganic halide perovskites

Yijun Tong,Xiaofeng Xiang,Scott Dunham

DOI: https://doi.org/10.1016/j.commatsci.2024.113384

IF: 3.572

2024-09-26

Computational Materials Science

Abstract:Inorganic halide perovskites have been considered as higher-stability alternatives to hybrid halide perovskites for optoelectronic applications. However, the formation of defects in these materials can significantly affect carrier density and recombination lifetime. Thus, understanding their properties is of great importance for achieving improved device performance. Through GGA+U calculations with spin–orbital coupling, we calculate the properties of native defects in CsPbI 3 /CsSnI 3 and the defect-assisted non-radiative recombination rates for selected deep levels. Importantly, we discover that the iodine interstitials in CsPbI 3 and tin interstitials in CsSnI 3 have high non-radiative carrier capture rates. Besides, we also notice that complete defect structural relaxations are only achievable when large supercells are used. This work not only provides insights into potential non-radiative recombination pathways due to the formation of corresponding interstitials, but also highlights the importance of utilizing large supercells for defect calculations in perovskites.

materials science, multidisciplinary
Two-dimensional Halide Perovskites: Tuning Electronic Activities of Defects

Yuanyue Liu,Hai Xiao,William A. Goddard III

DOI: https://doi.org/10.1021/acs.nanolett.6b00964

2016-05-09

Abstract:Two-dimensional (2D) halide perovskites are emerging as promising candidates for nano-electronics and optoelectronics. To realize their full potential, it is important to understand the role of those defects that can strongly impact material properties. In contrast to other popular 2D semiconductors (e.g. transition metal dichalcogenides MX2) for which defects typically induce harmful traps, we show that the electronic activities of defects in 2D perovskites are significantly tunable. For example, even with a fixed lattice orientation, one can change the synthesis conditions to convert a line defect (edge or grain boundary) from electron acceptor to inactive site without deep gap states. We show that this difference originates from the enhanced ionic bonding in these perovskites compared with MX2. The donors tend to have high formation energies, and the harmful defects are difficult to form at a low halide chemical potential. Thus we unveil unique properties of defects in 2D perovskites and suggest practical routes to improve them.

Materials Science,Mesoscale and Nanoscale Physics
Electron-Volt Fluctuation of Defect Levels in Metal Halide Perovskites on a 100 ps Time Scale

Bipeng Wang,Weibin Chu,Yifan Wu,David Casanova,Wissam A Saidi,Oleg V Prezhdo

DOI: https://doi.org/10.1021/acs.jpclett.2c01452

2022-06-30

Abstract:Metal halide perovskites (MHPs) have gained considerable attention due to their excellent optoelectronic performance, which is often attributed to unusual defect properties. We demonstrate that midgap defect levels can exhibit very large and slow energy fluctuations associated with anharmonic acoustic motions. Therefore, care should be taken classifying MHP defects as deep or shallow, since shallow defects may become deep and vice versa. As a consequence, charges from deep levels can escape into bands, and light absorption can be extended to longer wavelengths, improving material performance. The phenomenon, demonstrated with iodine vacancy in CH3NH3PbI3 using a machine learning force field, can be expected for a variety of defects and dopants in many MHPs and other soft inorganic semiconductors. Since large-scale anharmonic motions can be precursors to chemical decomposition, a known problem with MHPs, we propose that materials that are stiffer than MHPs but softer than traditional inorganic semiconductors, such as Si and TiO2, may simultaneously exhibit excellent performance and stability.
Lattice dynamics and the nature of structural transitions in organolead halide perovskites

Riccardo Comin,Michael K. Crawford,Ayman Said,Norman Herron,William E. Guise,Xiaoping Wang,Pamela S. Whitfield,Ankit Jain,Xiwen Gong,Alan J. H. McGaughey,Edward H. Sargent

DOI: https://doi.org/10.1103/PhysRevB.94.094301

2016-08-19

Abstract:Organolead halide perovskites are a family of hybrid organic-inorganic compounds whose remarkable optoelectronic properties have been under intensive scrutiny in recent years. Here we use inelastic X-ray scattering to study low-energy lattice excitations in single crystals of methylammonium lead iodide and bromide perovskites. Our findings confirm the displacive nature of the cubic-to-tetragonal phase transition, which is further shown, using neutron and x-ray diffraction, to be close to a tricritical point. Lastly, we detect quasistatic symmetry-breaking nanodomains persisting well into the high-temperature cubic phase, possibly stabilized by local defects. These findings reveal key structural properties of these materials, and also bear important implications for carrier dynamics across an extended temperature range relevant for photovoltaic applications.

Materials Science
Local Strain Heterogeneity Influences the Optoelectronic Properties of Halide Perovskites

Timothy W. Jones,Anna Osherov,Mejd Alsari,Melany Sponseller,Benjamin C. Duck,Young-Kwang Jung,Charles Settens,Farnaz Niroui,Roberto Brenes,Camelia V. Stan,Yao Li,Mojtaba Abdi-Jalebi,Nobumichi Tamura,J. Emyr Macdonald,Manfred Burghammer,Richard H. Friend,Vladimir Bulović,Aron Walsh,Gregory J. Wilson,Samuele Lilliu,Samuel D. Stranks

DOI: https://doi.org/10.48550/arXiv.1803.01192

2018-05-15

Abstract:Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale heterogeneity in key properties such as luminescence efficiency and device performance. This behavior has been attributed to spatial fluctuations in the population of sub-bandgap electronic states that act as trap-mediated non-radiative recombination sites. However, the origin of the variations, trap states and extent of the defect tolerance remains a topic of debate, and a precise understanding is critical to the rational design of defect management strategies. By combining scanning X-ray diffraction beamlines at two different synchrotrons with high-resolution transmission electron microscopy, we reveal levels of heterogeneity on the ten-micrometer scale (super-grains) and even ten-nanometer scale (sub-grain domains). We find that local strain is associated with enhanced defect concentrations, and correlations between the local structure and time-resolved photoluminescence reveal that these strain-related defects are the cause of non-radiative recombination. We reveal a direct connection between defect concentrations and non-radiative losses, as well as complex heterogeneity across multiple length scales, shedding new light on the presence and influence of structural defects in halide perovskites.

Materials Science
Electron-Phonon Coupling-Mediated Ultralong Carrier Lifetime in an All-Inorganic Two-Dimensional Cs 2 PbI 2 Cl 2 Perovskite: Explanation for the High Antisite Defect Tolerance

Xingyun Luo,Xiaoji Zhao,Xian Zhao,Yanlu Li

DOI: https://doi.org/10.1021/acs.jpclett.3c03588

IF: 6.888

2024-02-09

The Journal of Physical Chemistry Letters

Abstract:Two-dimensional (2D) halide perovskite are appealing candidates for applications in optoelectronics and photovoltaics, but their energy conversion efficiency is severely limited by nonradiative electron-hole recombination. In most investigations, point defects with deep defect levels and deep charge-state transition levels in the band gap are treated as the carrier recombination centers. For the all-inorganic 2D Css (2)PbI(2)Cl(2), the I(Pb) antisite defect is the most likely to form and cause...

chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary
Experimentally observed defect tolerance in the electronic structure of lead bromide perovskites

Gabriel J. Man,Aleksandr Kalinko,Dibya Phuyal,Pabitra K. Nayak,Håkan Rensmo,Sergei M. Butorin

2023-05-06

Abstract:Point defect tolerance in materials, which extends operational lifetime, is essential for societal sustainability, and the creation of a framework to design such properties is a grand challenge in the material sciences. Using three prototypical lead bromide perovskites in single crystal form and high-resolution synchrotron-based X-ray spectroscopy, we reveal the unexpectedly pivotal role of the A-cation in mediating the influence of photoinduced defects. Organic A-cation hydrogen bonding facilitates chemical flexing of the lead-bromide bond that mitigates the self-doping effect of bromide vacancies. The contribution of partially ionic lead-bromide bonding to the electronic band edges, where the bonding becomes more ionic upon the formation of defects, mitigates re-hybridization of the electronic structure upon degradation. These findings reveal two new general design principles for defect tolerance in materials. Our findings uncover the foundations of defect tolerance in halide perovskites and have implications for defect calculations, all beam-based measurements of photophysical properties and perovskite solar cell technology.

Materials Science
Pseudospin-phonon pretransitional dynamics in lead halide hybrid perovskites

B. Hehlen,P. Bourges,B. Rufflé,S. Clément,R. Vialla,A. C. Ferreira,C. Ecolivet,S. Paofai,S. Cordier,C. Katan,A. Létoublon,J. Even

DOI: https://doi.org/10.1103/PhysRevB.105.024306

2022-01-27

Abstract:The low-frequency lattice vibrations and relaxations are investigated in single crystals of the four 3D hybrid organolead perovskites, MAPbBr3 , FAPbBr3 , MAPbI3 , and α−FAPbI3 , at the Brillouin zone center using Raman and Brillouin scattering and at the zone boundary using inelastic neutron scattering. The temperature dependence of the PbX6 lattice modes in the four compounds can be renormalized into universal curves, highlighting a common vibrational dynamics at the cubic to tetragonal transition. In particular, no soft vibration is observed excluding a displacive-like transitional dynamics. The reorientational (pseudospin) motions of the molecular cations exhibit a seemingly order-disorder character recalling that of plastic crystals, but attributed to a secondary order parameter. At ultralow frequency, a quasielastic component evidenced by Brillouin scattering and associated to the unresolved central peak observed in neutron scattering, is attributed to center of mass anharmonic motions and rattling of the molecular cations in the perovskite cavities. Its partially unexpressed critical behavior at the transition points toward the general importance of defects in HOPs preventing the net divergence of order parameter correlations at the critical temperatures. https://doi.org/10.1103/PhysRevB.105.024306 ©2022 American Physical Society
Compound Defects in Halide Perovskites: A First-Principles Study of CsPbI$_3$

Haibo Xue,José Manuel Vicent-Luna,Shuxia Tao,Geert Brocks

2022-09-08

Abstract:Lattice defects affect the long-term stability of halide perovskite solar cells. Whereas simple point defects, i.e., atomic interstitials and vacancies, have been studied in great detail, here we focus on compound defects that are more likely to form under crystal growth conditions, such as compound vacancies or interstitials, and antisites. We identify the most prominent defects in the archetype inorganic perovskite CsPbI$_3$, through first-principles density functional theory (DFT) calculations. We find that under equilibrium conditions at room temperature, the antisite of Pb substituting Cs forms in a concentration comparable to those of the most prominent point defects, whereas the other compound defects are negligible. However, under nonequilibrium thermal and operating conditions, other complexes also become as important as the point defects. Those are the Cs substituting Pb antisite, and, to a lesser extent, the compound vacancies of PbI$_2$ or CsPbI$_3$ units, and the I substituting Cs antisite. These compound defects only lead to shallow or inactive charge carrier traps, which testifies to the electronic stability of the halide perovskites. Under operating conditions with a quasi Fermi level very close to the valence band, deeper traps can develop.

Physics
Photoinduced dynamic defect tolerance in hybrid organic–inorganic perovskites: phenomena and mechanism

Guangsheng Liu,Qianwen Wei,Guijun Zhang,Mehri Ghasemi,Qi Li,Junlin Lu,Juan Wang,Baohua Jia,Yu Yang,Xiaoming Wen

DOI: https://doi.org/10.1039/d4tc01578a

IF: 6.4

2024-06-01

Journal of Materials Chemistry C

Abstract:Defect tolerance plays a crucial role in the outstanding photoelectric performance of hybrid organic–inorganic perovskites (HOIPs). Although the origin of defect tolerance has been extensively studied in the past few years through static density functional theory (DFT) calculations and experiments, the mechanism of photoinduced defect dynamic change has not yet been well revealed. In this study, we first demonstrate that defect tolerance is dynamically responsive to illumination. Continuous illumination can result in an increased defect tolerance, manifested as an increase in average carrier lifetime and photoluminescence (PL) efficiency, and the timescales involved are consistent with the reported ion activities. The results of DFT calculations and non-adiabatic molecular dynamics (NAMD) simulation suggest that the photoinduced dynamic PL enhancement can be attributed to the local structural reorganization caused by the defect trapping/detrapping, resulting in the formation of long-living structures with longer carrier lifetimes. The study reveals that the dynamic defect tolerance in HOIPs is powered by a unique interaction between the soft lattice, phonons, excited carriers, and defect sites. It has significant implications for the development of photostable optoelectronic devices based on HOIPs.

materials science, multidisciplinary,physics, applied
Polaron states of the full-configuration defects in metal halide perovskites

Yi-Yan Liu,Yu Cui,Chun-Yu Cai,Jia-Pei Deng,Zhi-Qing Li,Zi-Wu Wang

DOI: https://doi.org/10.1088/1361-648X/acb4ce

2023-01-31

Abstract:The systematical analysis for varieties of defects with different depths and lattice relaxation strengths in metal halide perovskites (MHPs) is a challenging task. Here, we study the energy shifts of the full-configuration defects due to the polaron effect based on the all-coupling variational method in MHPs, where these polaron states are formed stemming from different defect species coupling with the longitudinal optical phonon modes via Fro¨hlich mechanism. We find that the polaron effect results in defect levels varying from tens to several hundreds of meV, which are very close to the correction of defect levels due to the defect-polaron effect, especially for these defects migration proved in the recent experiments in MHPs. These results provide the significant enlightenment not only for analyzing the radiation and non-radiation processes of carriers mediated by defects, but also for optimizing defect effect in the photovoltaic and photoelectric devices based on MHPs materials.
Self-regulation mechanism for charged point defects in hybrid halide perovskites

Aron Walsh,David O. Scanlon,Shiyou Chen,Xingao Gong,Su-Huai Wei

DOI: https://doi.org/10.1002/anie.201409740

2014-11-27

Abstract:Hybrid halide perovskites such as methylammonium lead iodide (CH3NH3PbI3) exhibit unusually low free carrier concentrations despite being processed at low-temperatures from solution. We demonstrate, through quantum mechanical calculations, that the origin of this phenomenon is a prevalence of ionic over electronic disorder in stoichiometric materials. Schottky defect formation provides a mechanism to self-regulate the concentration of charge carriers through ionic compensation of charged point defects. The equilibrium charged vacancy concentration is predicted to exceed 0.4% at room temperature. This behaviour, which goes against established defect conventions for inorganic semiconductors, has implications for photovoltaic performance.

Materials Science
Defect Tolerance of Mixed B-Site Organic–Inorganic Halide Perovskites

Jian Xu,Aidan Maxwell,Mingyang Wei,Zaiwei Wang,Bin Chen,Tong Zhu,Edward H. Sargent

DOI: https://doi.org/10.1021/acsenergylett.1c02105

IF: 22

2021-11-05

ACS Energy Letters

Abstract:Further improvements in the photovoltaic performance of B-site alloyed organic–inorganic halide perovskites (OIHPs) will rely on accurate modeling of defect properties and passivation strategies. Herein, we report that B-site alloying results in defect behaviors distinct from those of pure OIHPs, a finding obtained by uniting first-principles calculations with experimental measurements. We identify from computational studies a defect-tolerant region spanning a Sn content of 30–70% in mixed Pb-Sn perovskites and experimentally observe notably longer carrier lifetimes in 50% Sn mixed perovskite films than at other Sn contents. We discuss a strategy of applying defect-tolerant 50% Pb-Sn perovskites in ideal-bandgap (1.3–1.4 eV) active layer materials which conventionally rely on 25–30% Sn compositions. The composition (FA0.75Cs0.25Pb0.5Sn0.5(I0.9Br0.1)3) achieves increased carrier lifetimes of >1 μs. This work reveals a general trend in defect tolerance for B-site alloying: a higher valence band maximum (lower conduction band minimum), along with strengthened ionic bonding, can potentially contribute to improved photovoltaic performance.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology,energy & fuels,electrochemistry
Theoretical insights into the role of lattice fluctuations on the excited behavior of lead halide perovskites

Yoonjae Park,Rohit Rana,Daniel Chabeda,Eran Rabani,David T. Limmer

2024-09-24

Abstract:Unravelling the role of charge-lattice interactions on the optoelectronic properties in lead halide perovskites is of great interest due to their unique photophysical properties. While there is broad consensus on the importance of the structural deformations and polar fluctuations on the behavior of charge carriers and quasiparticles, the strongly anharmonic nature of these fluctuations and their strong interactions render theoretical descriptions of lead halides challenging. In this Account, we review our recent efforts to understand how the soft, polar lattice of this class of materials alter their quasiparticle binding energies and fine structure, charge mobilities, and lifetimes of phonons and excess charges. This is reviewed in the context of the effective models we have built, and the novel theoretical methods we have developed to understand bulk crystalline materials, as well as nanostructures, and lower dimensionality lattices. The perspective we detail provides both some design principles for optoelectronic materials and a set of theoretical tools to study them when charge-lattice interactions are important.

Materials Science,Chemical Physics
Diffusion-Mediated Anharmonic Phonon Transport and Thermal Conductivity Reduction in Defective Hybrid Perovskites

Zhuangli Cai,Zuolin Liu,Bin Yang,Min Yang,Shangchao Lin

DOI: https://doi.org/10.1115/ht2021-62601

2021-06-16

Abstract:Abstract Hybrid metal halide perovskite is a promising material for efficient photovoltaic cells and potential thermoelectric energy conversion. This paper investigates phonon thermal transport in iodine-vacancy-defect methylammonium lead iodide (MAPbI3) perovskite using molecular dynamics simulations. The results show that the iodine vacancy defects suppress the thermal conductivity of defective MAPbI3. This effect is enhanced with increasing the defect concentration. The reduction of thermal conductivity of MAPbI3 with iodine vacancy defects compared with the pristine counterpart is mainly attributed to the enhanced phonon anharmonicity and shorter phonon relaxation time due to the phonon-defect scattering. Although iodine diffusion is observed in MAPbI3 with iodine vacancy defects, defect migration has a limited impact on mass-transfer induced convective phonon transport, while it is a source of phonon anharmonicity. This study may provide guidance for theoretical research and industrial application of as-synthesized metal halide perovskites with intrinsic defects.
Inhomogeneous Defect Distribution in Mixed-Polytype Metal Halide Perovskites

Young Won Woo,Zhenzhu Li,Young-Kwang Jung,Ji-Sang Park,Aron Walsh

DOI: https://doi.org/10.48550/arXiv.2211.00956

2022-11-02

Abstract:The competition between corner, edge and face-sharing octahedral networks is a cause of phase inhomogeneity in metal halide perovskite thin-films. Here we probe the charged iodine vacancy distribution and transport at the junction between cubic and hexagonal polytypes of CsPbI$_3$ from first-principles materials modelling. We predict a lower defect formation energy in the face-sharing regions, which correlates with a longer Pb$-$I bond length and causes a million-fold increase in local defect concentration. These defects are predicted to be more mobile in the face-sharing regions with a reduced activation energy for vacancy-mediated diffusion. We conclude that hexagonal phase inclusions or interfaces will act as defect sinks that could trap charges and enhance current-voltage hysteresis in perovskite-based solar cells and electrical devices.

Materials Science
Low-energy pathways lead to self-healing defects in CsPbBr$_3$

Kumar Miskin,Yi Cao,Madaline Marland,Jay Rwaka,Farhan Shaikh,David Moore,John Marohn,Paulette Clancy

2024-05-22

Abstract:Self-regulation of free charge carriers in perovskites via Schottky defect formation has been posited as the origin of the well-known defect tolerance of metal halide perovskite materials that are promising candidates for photovoltaic applications, like solar cells. Understanding the mechanisms of self-regulation, here for a representative of more commercially viable all-inorganic perovskites, promises to lead to the fabrication of better-performing solar cell materials with higher efficiencies. We investigated different mechanisms and pathways of the diffusion and recombination of interstitials and vacancies (Schottky pairs) in CsPbBr$_3$. We use Nudged Elastic Band calculations and ab initio-derived pseudopotentials within Quantum ESPRESSO to determine energies of formation, migration, and activation for these defects. Our calculations uncover defect pathways capable of producing an activation energy at or below the value of 0.53~eV observed for the slow, temperature-dependent recovery of light-induced conductivity in CsPbBr$_3$. Our work reveals the existence of a low-energy diffusion pathway involving a concerted "domino effect" interstitial mechanism, with the net result that interstitials can diffuse more readily over long distances than expected. Importantly, this observation suggests that defect self-healing can be promoted if the "domino effect" strategy can be engaged.

Materials Science,Computational Physics
Metastability and anharmonicity enhance defect-assisted nonradiative recombination in low-symmetry semiconductors

Menglin Huang,Shanshan Wang,Shiyou Chen

2023-12-04

Abstract:Strong nonradiative recombination has been observed in quasi-one-dimensional antimony selenide, which runs counter to the simple intuition that claims high defect tolerance exists in semiconductors with antibonding state in the valence band and bonding state in the conduction band. Here we reveal such a defect intolerance actually stems from the richness of structural metastability and vibrational anharmonicity owing to the low-symmetry atomic structure. Taking the deep defect V$_{\rm Se}$ as a benchmark, we show the defect with its ground-state configuration alone does not act as a recombination center. Instead, we identify three different configurations with different formation energies, such richness of metastability offers a higher probability to accomplish a rapid recombination cycle. Another contributing factor is the anharmonicity in the potential energy surfaces that is caused by the large atomic relaxation, which elevates the total capture coefficient by 2-3 orders of magnitude compared with harmonic approximation. Therefore, the unique properties from both crystals and phonons in quasi-one-dimensional system enhance the nonradiative recombination, making the traditional intuition of defect tolerance invalid. These results highlight the importance of the correct identification of metastable defects and phonon anharmonicity in the nonradiative recombination in low-symmetry semiconductors.

Materials Science

Low-frequency lattice phonons in halide perovskites explain high defect tolerance toward electron-hole recombination

Multifaceted nature of defect tolerance in halide perovskites and emerging semiconductors

An explanation for high defect tolerance in metal halide perovskite quantum dots

Interstitals as non-radiative recombination centers for all-inorganic halide perovskites

Two-dimensional Halide Perovskites: Tuning Electronic Activities of Defects

Electron-Volt Fluctuation of Defect Levels in Metal Halide Perovskites on a 100 ps Time Scale

Lattice dynamics and the nature of structural transitions in organolead halide perovskites

Local Strain Heterogeneity Influences the Optoelectronic Properties of Halide Perovskites

Electron-Phonon Coupling-Mediated Ultralong Carrier Lifetime in an All-Inorganic Two-Dimensional Cs 2 PbI 2 Cl 2 Perovskite: Explanation for the High Antisite Defect Tolerance

Experimentally observed defect tolerance in the electronic structure of lead bromide perovskites

Pseudospin-phonon pretransitional dynamics in lead halide hybrid perovskites

Compound Defects in Halide Perovskites: A First-Principles Study of CsPbI$_3$

Photoinduced dynamic defect tolerance in hybrid organic–inorganic perovskites: phenomena and mechanism

Polaron states of the full-configuration defects in metal halide perovskites

Self-regulation mechanism for charged point defects in hybrid halide perovskites

Defect Tolerance of Mixed B-Site Organic–Inorganic Halide Perovskites

Theoretical insights into the role of lattice fluctuations on the excited behavior of lead halide perovskites

Diffusion-Mediated Anharmonic Phonon Transport and Thermal Conductivity Reduction in Defective Hybrid Perovskites

Inhomogeneous Defect Distribution in Mixed-Polytype Metal Halide Perovskites

Low-energy pathways lead to self-healing defects in CsPbBr$_3$

Metastability and anharmonicity enhance defect-assisted nonradiative recombination in low-symmetry semiconductors