Electrically Detected Magnet Resonance Studies of 4H SiC MOSFETs

P.M. Lenahan,C.J. Cochrane,A. Lelis

DOI: https://doi.org/10.1149/ma2013-02/25/1902

2013-10-27

ECS Meeting Abstracts

Abstract:Abstract not Available.

What problem does this paper attempt to address?

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Chia-Yu Chen,Yang Liu,Robert W. Dutton,Junko Sato-Iwanaga,Akira Inoue,Haruyuki Sorada

DOI: https://doi.org/10.1109/TED.2008.925329

IF: 3.1

2008-01-01

IEEE Transactions on Electron Devices

Abstract:Device-level simulation capabilities have been developed to investigate low-frequency noise behavior in p-type Si0.7Ge0.3/Si heterostructure MOS (SiGe p-HMOS) transistors. The numerical model is based on the impedance field method; it accounts for a trap-induced carrier number fluctuation, a layer-dependent correlated mobility fluctuation, and a Hooge mobility fluctuation in the buried and parasit...
Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO$_2$ interface

Gernot Gruber,Jonathon Cottom,Robert Meszaros,Markus Koch,Gregor Pobegen,Thomas Aichinger,Dethard Peters,Peter Hadley

DOI: https://doi.org/10.48550/arXiv.1709.08664

2017-09-25

Materials Science

Abstract:SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of the devices. The relevant microscopic defects can be identified by electron paramagnetic resonance (EPR) or electrically detected magnetic resonance (EDMR). This helps to decide which changes to the fabrication process will likely lead to further increases of device performance and reliability. EDMR measurements have shown very similar dominant hyperfine (HF) spectra in differently processed MOSFETs although some discrepancies were observed in the measured $g$-factors. Here, the HF spectra measured of different SiC MOSFETs are compared and it is argued that the same dominant defect is present in all devices. A comparison of the data with simulated spectra of the C dangling bond (P$_\textrm{bC}$) center and the silicon vacancy (V$_\textrm{Si}$) demonstrates that the P$_\textrm{bC}$ center is a more suitable candidate to explain the observed HF spectra.
Electrometry by optical charge conversion of deep defects in 4H-SiC

G. Wolfowicz,S.J. Whiteley,D.D. Awschalom

DOI: https://doi.org/10.1073/pnas.1806998115

2018-03-16

Abstract:Optically-active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain and temperature. Current sensing techniques take advantage of the relaxation and coherence times of the spin state within these defects. Here we show that the defect charge state can also be used to sense the environment, in particular high frequency (MHz-GHz) electric fields, complementing established spin-based techniques. This is enabled by optical charge conversion of the defects between their photoluminescent and dark charge states, with conversion rate dependent on the electric field (energy density). The technique provides an all-optical high frequency electrometer which is tested in 4H-SiC for both ensembles of divacancies and silicon vacancies, from cryogenic to room temperature, and with a measured sensitivity of ~41 (V/cm)**2 / $\sqrt{Hz}$. Finally, due to the piezoelectric character of SiC, we obtain spatial 3D maps of surface acoustic wave modes in a mechanical resonator.

Mesoscale and Nanoscale Physics,Instrumentation and Detectors,Quantum Physics
Microwave power and simulation of S-band SiC MESFETs

Chen Gang,Qin YuFei,Bai Song,Wu Peng,Li ZheYang,Chen Zheng,P. Han

DOI: https://doi.org/10.1016/j.sse.2009.12.027

IF: 1.916

2010-01-01

Solid-State Electronics

Abstract:In this paper we report our research on DC and S parameter simulations and DC and RF characteristics experimental results of 4H–SiC MESFETs on a high purity semi-insulating substrate. 4H-SiC MESFETs were fabricated using home-grown epi structures. We designed our own devices process to fabricate n-channel 4H–SiC MESFETs with 200μm gate periphery. At a frequency of 2GHz and at 79V drain voltage, the maximum output power density CW is measured to be 7.8W/mm, with a gain of 11.9dB, and power-added efficiency 40%. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) is 8.7GHz and 25.5GHz, respectively. The simulation result of fT and fmax is 11.4GHz and 38.6GHz, respectively.
A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Mihaila, A.,Udrea, F.,Amaratunga, G.,Brezeanu, G.

DOI: https://doi.org/10.1109/SMICND.2000.890214

2000-01-01

Abstract:This paper presents a systematic analysis of breakdown mechanisms in silicon carbide MOSFET and JFET. For the MOSFET, the trench technology has been selected. The JFET structure is very similar to that having the distinctive feature of a buffer layer grown on the top of the drift region. Both devices are designed for 1.2 kV and were simulated and optimised using MEDICI and ISE TCAD software packages. This study indicates that the gate oxide breakdown puts a strong limitation on the electrical performance of the SiC trench MOSFET. Drawbacks encountered in SiC trench MOSFET, such as gate oxide breakdown, low channel mobility and the tight trade-off between the punch-through premature breakdown and the threshold voltage in the channel can be eliminated by using the SiC JFET
Short-Circuit and Over-Current Fault Detection for SiC MOSFET Modules Based on Tunnel Magnetoresistance with Predictive Capabilities

Yuxin Feng,Shuai Shao,Jiakun Du,Qian Chen,Junming Zhang,Xinke Wu

DOI: https://doi.org/10.1109/tpel.2021.3121572

IF: 5.967

2022-01-01

IEEE Transactions on Power Electronics

Abstract:This letter proposes a short-circuit and over-current fault detection solution for silicon-carbide (SiC) mosfet modules based on tunnel magnetoresistance (TMR). The TMR sensor is integrated into an SiC mosfet module to noninvasively measure its current. The measured current is compared with a threshold to detect short-circuit and over-current faults. The TMR sensor is installed in a chosen location, where the TMR sensor gain is automatically doubled in the event of short-circuit fault. As a result, a short-circuit fault can be predicted, i.e., the fault is detected before the actual short-circuit current reaches the threshold. Besides, only one TMR sensor is required to detect both short-circuit and over-current faults for a half-bridge power module. According to the experimental results, the short-circuit fault is detected when the fault current reaches half of the fault threshold current. The experimental results indicate general superiority over desaturation technology and better performance in detection time, reaction time, and total protection time compared with Rogowski switch-current sensor-based technology.
A numerical comparison between MOS control and junction control high voltage devices in SiC technology

A Mihaila,F Udrea,G Brezeanu,G Amaratunga

DOI: https://doi.org/10.1016/S0038-1101(02)00185-5

IF: 1.916

2003-01-01

Solid-State Electronics

Abstract:A comprehensive numerical comparison between MOS control (MOSFETs) and junction control (JFETs) devices in SiC technology is presented. The study is carried out using the MEDICI device simulator and covers an interval of blocking voltages ranging from 600 V to 6.5 kV. The gate oxide failure phenomenon in SiC trench MOSFETs is studied and the effect of wide trenches and rounded trench corners on the voltage blocking performance is investigated. The paper continues with a comparative study of SiC MOSFETs and SiC JFETs. The JFET chosen has a particular channel geometry featuring a highly doped buffer layer to reduce the on-state resistance. The influence of the buffer layer and the gate voltage on the JFET on-state/breakdown performance is carefully investigated. The study concludes with a mixed-mode simulation of the transient behaviour of a 1.2 kV SiC JFET–Silicon MOSFET pair in a CASCODE configuration as a viable alternative to a single switch (either SiC MOSFET or JFET).
Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs

Laurens H. Willems van Beveren,Hans Huebl,Andrea Morello

DOI: https://doi.org/10.1109/COMMAD.2010.5699750

2011-05-06

Abstract:We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin resonance in donor-based semiconductor devices. Here we present the effect of microwave (MW) power and MOSFET biasing conditions on the EDMR signals.

Mesoscale and Nanoscale Physics,Materials Science
Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs

Maximilian W. Feil,Magdalena Weger,Hans Reisinger,Thomas Aichinger,André Kabakow,Dominic Waldhör,Andreas C. Jakowetz,Sven Prigann,Gregor Pobegen,Wolfgang Gustin,Michael Waltl,Michel Bockstedte,Tibor Grasser

2024-04-21

Abstract:Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are grounded. The emitted photons are caused by defect-assisted recombination of electrons and holes at the 4H-SiC/SiO$_2$ interface and can be detected through the SiC substrate. Here, we present time-gated spectroscopic characterization of these interfacial point defects. Unlike in previous studies, the devices were opened in such a way that the drain-contact remained electrically active. A separate examination of the photons emitted at the rising and falling transitions of the gate-source voltage enabled the extraction of two different spectral components. One of these components consists of a single transition with phonon replicas of a local vibrational mode (LVM) with an astonishingly high energy of 220 meV $\unicode{x2013}$ well above the highest phonon modes in 4H-SiC and SiO$_2$ of 120 meV and 137 meV, respectively. Based on a quantum mechanical model, we successfully fitted its emission spectrum and assigned it to donor-acceptor pair recombination involving a carbon cluster-like defect. Other transitions were assigned to EH$_{6/7}$-assisted, EK$_2$-D, and nitrogen-aluminum donor-acceptor pair recombination. Due to the relevance of these defects in the operation of SiC MOSFETs, these novel insights will contribute to improved reliability and performance of these devices.

Applied Physics
Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications

Stephen J. Moxim,Nicholas J. Harmon,Kenneth J. Myers,James P. Ashton,Elias B. Frantz,Michael E. Flatté,Patrick M. Lenahan,Jason T. Ryan

DOI: https://doi.org/10.1063/5.0203331

IF: 2.877

2024-04-16

Journal of Applied Physics

Abstract:The near-zero-field magnetoresistance (NZFMR) response has proven to be a useful tool for studying atomic-scale, paramagnetic defects that are relevant to the reliability of semiconductor devices. The measurement is simple to make and, in some cases, simple to interpret. In other cases, more sophisticated modeling based on the stochastic Liouville equation (SLE) is needed to access valuable information from NZFMR results. It has been shown that hyperfine and dipolar coupling interactions at atomic-scale defects affect the NZFMR line shape, but experimental parameters related to the detection method of NZFMR can also affect the nature of the response. Here, we demonstrate four distinct NZFMR detection methods in Si MOSFETs, which all access identical Si/SiO2 interface defects. In all four cases, we show that the line shape of the response is tunable based on experimental parameters alone. Using SLE-based modeling, we verify that time constants connected to physical carrier capture rates at the defect sites lead to these NZFMR line shape changes. The results demonstrate a method to extract some atomic-scale information for the purpose of defect identification. They also have broader applications to the continued development of ultra-sensitive magnetometers based on NZFMR in semiconductors. Additionally, the NZFMR effect in common Si-based devices may provide an inexpensive and accessible platform that mimics similar radical pair mechanisms that have become increasingly important in various biology fields.

physics, applied
Monte Carlo Investigation of Silicon MOSFET for Terahertz Detection

Juncheng Wang,Gang Du,Xiaoyan Liu

DOI: https://doi.org/10.1109/sispad.2015.7292296

2015-01-01

Abstract:In this paper, the terahertz (THz) detection based on Silicon MOSFET is investigated with two-dimensional (2D) ensemble Monte Carlo (MC) simulation study. The analytical model of responsivity to high frequency small signals based on the small-signal equivalent circuit of MOSFETs operating in terahertz detection mode are developed and calibrated. We explore the impacts of input excitation signals with different frequency and amplitude on THz detection. Moreover, it is shown that the responsivity to THz excitations could be controlled by modulation of the gate voltage and the gate length in the MOSFET.
Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

A. Csóré,N. T. Son,A. Gali

DOI: https://doi.org/10.48550/arXiv.2104.04292

2021-04-09

Materials Science

Abstract:The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be optically manipulated even at room temperature. Recently, electron spin resonance signals have been observed besides the signals associated with the V$_\text{Si}(-)$ defects in the 4H polytype of SiC. The corresponding centers share akin properties to those of the V$_\text{Si}(-)$ defects and thus they may be promising candidates for quantum technology applications. However, the exact origin of the new signals is unknown. In this paper we report V$_\text{Si}(-)$-related pair defect models as possible candidates for the unknown centers. We determine the corresponding electronic structures and magneto-optical properties as obtained by density functional theory (DFT) calculations. We propose models for the recently observed electron paramagnetic resonance centers with predicting their optical signals for identification in future experiments.
Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs

Maximilian W. Feil,Magdalena Weger,Hans Reisinger,Thomas Aichinger,André Kabakow,Dominic Waldhör,Andreas C. Jakowetz,Sven Prigann,Gregor Pobegen,Wolfgang Gustin,Michael Waltl,Michel Bockstedte,Tibor Grasser

DOI: https://doi.org/10.1103/physrevapplied.22.024075

IF: 4.6

2024-09-02

Physical Review Applied

Abstract:Fully processed SiC power MOSFETs emit light during switching of the gate terminal, while the drain and source terminals are both grounded. The emitted photons are caused by defect-assisted recombination of electrons and holes at the 4H - ([A-Z][a-z])([A-Z])/([A-Z][a-z])([A-Z])2 interface, and can be detected through the SiC substrate. Here we present time-gated spectroscopic characterization of these interfacial point defects. Unlike in previous studies, the devices were opened in such a way that the drain contact remained electrically active. A separate examination of the photons emitted at the rising and falling transitions of the gate-source voltage enabled the extraction of two different spectral components. One of these components consists of a single transition with phonon replicas of a local vibrational mode with an astonishingly high energy of 220 meV—well above the highest phonon modes in 4H -SiC and ([A-Z][a-z])([A-Z])2 of 120 and 137 meV, respectively. On the basis of a quantum mechanical model, we successfully fitted its emission spectrum and assigned it to donor-acceptor-pair recombination involving a carbon-cluster-like defect. Other transitions were assigned to EH6/7 -assisted, EK2 -D, and nitrogen-aluminum donor-acceptor-pair recombination. Because of the relevance of these defects in the operation of SiC MOSFETs, these insights will contribute to improved reliability and performance of these devices. https://doi.org/10.1103/PhysRevApplied.22.024075 © 2024 American Physical Society

physics, applied
High Isolation, Double-Clamped, Magnetoelectric Microelectromechanical Resonator Magnetometer

Thomas Mion,Michael J D'Agati,Sydney Sofronici,Konrad Bussmann,Margo Staruch,Jason L Kost,Kevin Co,Roy H Olsson 3rd,Peter Finkel

DOI: https://doi.org/10.3390/s23208626

2023-10-21

Abstract:Magnetoelectric (ME)-based magnetometers have garnered much attention as they boast ultra-low-power systems with a small form factor and limit of detection in the tens of picotesla. The highly sensitive and low-power electric readout from the ME sensor makes them attractive for near DC and low-frequency AC magnetic fields as platforms for continuous magnetic signature monitoring. Among multiple configurations of the current ME magnetic sensors, most rely on exploiting the mechanically resonant characteristics of a released ME microelectromechanical system (MEMS) in a heterostructure device. Through optimizing the resonant device configuration, we design and fabricate a fixed-fixed resonant beam structure with high isolation compared to previous designs operating at ~800 nW of power comprised of piezoelectric aluminum nitride (AlN) and magnetostrictive (Co1-xFex)-based thin films that are less susceptible to vibration while providing similar characteristics to ME-MEMS cantilever devices. In this new design of double-clamped magnetoelectric MEMS resonators, we have also utilized thin films of a new iron-cobalt-hafnium alloy (Fe0.5Co0.5)0.92Hf0.08 that provides a low-stress, high magnetostrictive material with an amorphous crystalline structure and ultra-low magnetocrystalline anisotropy. Together, the improvements of this sensor design yield a magnetic field sensitivity of 125 Hz/mT when released in a compressive state. The overall detection limit of these sensors using an electric field drive and readout are presented, and noise sources are discussed. Based on these results, design parameters for future ME MEMS field sensors are discussed.
Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly-doped silicon substrates

J. F. Felix,L. C. Figueiredo,J. B. S. Mendes,P. C. Morais,C. I. L. de Araujo

DOI: https://doi.org/10.1016/j.jmmm.2015.07.061

2015-04-10

Abstract:In this study we investigate magnetic properties, surface morphology and crystal structure in iron nanoclusters electrodeposited on lightly-doped (100) n-type silicon substrates. Our goal is to investigate the spin injection and detection in the Fe/Si lateral structures. The samples obtained under electric percolation were characterized by magnetoresistive and magnetic resonance measurements with cycling the sweeping applied field in order to understand the spin dynamics in the as-produced samples. The observed hysteresis in the magnetic resonance spectra, plus the presence of a broad peak in the non-saturated regime confirming the low field microwave absorption (LFMA), were correlated to the peaks and slopes found in the magnetoresistance curves. The results suggest long range spin injection and detection in low resistive silicon and the magnetic resonance technique is herein introduced as a promising tool for analysis of electric contactless magnetoresistive samples.

Materials Science,Mesoscale and Nanoscale Physics
Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

Peyush Pande,Sima Dimitrijev,Daniel Haasmann,Hamid Amini Moghadam,Philip Tanner,Jisheng Han

DOI: https://doi.org/10.1109/jeds.2018.2820729

2018-01-01

IEEE Journal of the Electron Devices Society

Abstract:This brief presents direct electrical measurement of active defects in the strong-accumulation region of N-type 4H-SiC MOS capacitors, which corresponds to the strong-inversion region of N-channel MOSFETs. The results demonstrate the existence of an active defect in the gate oxide, located very close to the SiC surface, with localized energy levels between 0.13 eV and 0.23 eV above the bottom of the conduction band. The observed spatial and energy localizations indicates that this is a well-defined defect.
Enhancing the the electrical readout of the spin-dependent recombination current in SiC JFETs for EDMR based magnetometry using a tandem (de-)modulation technique

Andreas Gottscholl,Hannes Kraus,Thomas Aichinger,Corey J Cochrane

DOI: https://doi.org/10.1038/s41598-024-64595-3

2024-06-20

Abstract:Electrically detected magnetic resonance (EDMR) is a promising method to readout spins in miniaturized devices utilized as quantum magnetometers. However, the sensitivity has remained challenging. In this study, we present a tandem (de-)modulation technique based on a combination of magnetic field and radio frequency modulation. By enabling higher demodulation frequencies to avoid 1/f-noise, enhancing self-calibration capabilities, and eliminating background signals by 3 orders of magnitude, this technique represents a significant advancement in the field of EDMR-based sensors. This novel approach paves the way for EDMR being the ideal candidate for ultra-sensitive magnetometry at ambient conditions without any optical components, which brings it one step closer to a chip-based quantum sensor for future applications.
Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Aleksandr Vasilev,Maximilian Wolfgang Feil,Christian Schleich,Bernhard Stampfer,Gerhard Rzepa,Gregor Pobegen,Tibor Grasser,Michael Waltl

DOI: https://doi.org/10.4028/p-k93y93

2023-05-31

Materials Science Forum

Abstract:Publication date: 31 May 2023 Source: Materials Science Forum Vol. 1090 Author(s): Aleksandr Vasilev, Maximilian Wolfgang Feil, Christian Schleich, Bernhard Stampfer, Gerhard Rzepa, Gregor Pobegen, Tibor Grasser, Michael Waltl We investigated oxide and interface defects of lateral 4H-SiC MOSFETs through capacitance-voltage (C-V) and conductance-voltage (G-V) characterization at various frequencies and temperatures. By employing consecutive up and down sweeps of the gate voltage at three different temperatures, we experimentally characterized the hysteresis width as the difference between up and down sweeps in the depletion to accumulation (d-a) and depletion to inversion (d-i) regions. We observed an increase in the hysteresis width with decreasing temperature. Although the hysteresis width is not affected by the small-signal frequency, at the same time, increasing the frequency leads to a strong stretch-out effect, especially in the d-i region.Our measurement results indicate that the hysteresis deformation of the C-V curves is dominated by three different trap types. First, interface acceptor-like defects located close to the conduction band can follow the small-signal frequency. Slower acceptor-like border traps with trap levels both close to the conduction band and in the middle of the band gap are however responsible for the increase of trapped negative charge with increasing gate voltage. Finally, we assume the presence of a fixed positive charge.
A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET

Xinfeng Nie,Ying Wang,Chenghao Yu,Xinxing Fei,Jianqun Yang,Xingji Li

DOI: https://doi.org/10.3390/mi15010035

IF: 3.4

2023-12-24

Micromachines

Abstract:Due to its high thermal conductivity, high critical breakdown electric field, and high power, the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has been generally used in industry. In industrial applications, a common reliability problem in SiC MOSFET is avalanche failure. For applications in an avalanche environment, an improved, vertical, double-diffused MOSFET (VDMOSFET) device has been proposed. In this article, an unclamped inductive switching (UIS) test circuit has been built using the Mixed-Mode simulator in the TCAD simulation software, and the simulation results for UIS are introduced for a proposed SiC-power VDMOSFET by using Sentaurus TCAD simulation software. The simulation results imply that the improved VDMOSFET has realized a better UIS performance compared with the conventional VDMOSFET with a buffer layer (B-VDMOSFET) in the same conditions. Meanwhile, at room temperature, the modified VDMOSFET has a smaller on-resistance (Ron,sp) than B-VDMOSFET. This study can provide a reference for SiC VDMOSFET in scenarios which have high avalanche reliability requirements.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
All Electrical NZFMR Magnetometry up to 500$^\circ$C Using SiC Devices

F. Sgrignuoli,I. Viti,Z.G. Yu,E. Albright,P. Lenahan,S. Goswami,R. Ghandi,M. Aghayan,D.M.Shaddock

2024-11-20

Abstract:Silicon Carbide (SiC) is renowned for its exceptional thermal stability, making it a crucial material for high-temperature power devices in extreme environments. While optically detected magnetic resonance (ODMR) in SiC has been widely studied for magnetometry, it requires complex setups involving optical and microwave sources. Similarly, electrically detected magnetic resonance (EDMR) in SiC, which relies on an electrical readout of spin resonance, has also been explored for magnetometry. However, both techniques require microwave excitation, which limits their scalability. In contrast, SiC's spin-dependent recombination (SDR) currents enable a purely electrical approach to magnetometry through the near zero-field magnetoresistance (NZFMR) effect, where the device resistance changes in response to small magnetic fields. Despite its potential, NZFMR remains underexplored for high-temperature applications. In this work, we demonstrate the use of NZFMR in SiC diodes for high-temperature magnetometry and achieve sensitive detection of weak magnetic fields at temperatures up to 500$^\circ$C . Our technology offers a simple and cost-effective alternative to other magnetometry architectures. The NZFMR signal is modulated by an external magnetic field, which alters the singlet-triplet pair ratio controlled by hyperfine interactions between nuclear and electron/hole spins as well as dipole-dipole/exchange interactions between electron and hole spins, providing a novel mechanism for magnetometry sensing at elevated temperatures. A critical advantage of our approach is its low power consumption -less than 0.5 W at 500$^\circ$C for magnetic fields below 5 Gauss. This approach provides a sensitive, reliable, and scalable solution with promising applications in space exploration, automotive systems, and industrial sectors, where high performance in extreme conditions is essential.

Instrumentation and Detectors

Electrically Detected Magnet Resonance Studies of 4H SiC MOSFETs

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO$_2$ interface

Electrometry by optical charge conversion of deep defects in 4H-SiC

Microwave power and simulation of S-band SiC MESFETs

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Short-Circuit and Over-Current Fault Detection for SiC MOSFET Modules Based on Tunnel Magnetoresistance with Predictive Capabilities

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs

Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs

Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications

Monte Carlo Investigation of Silicon MOSFET for Terahertz Detection

Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs

High Isolation, Double-Clamped, Magnetoelectric Microelectromechanical Resonator Magnetometer

Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly-doped silicon substrates

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

Enhancing the the electrical readout of the spin-dependent recombination current in SiC JFETs for EDMR based magnetometry using a tandem (de-)modulation technique

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET

All Electrical NZFMR Magnetometry up to 500$^\circ$C Using SiC Devices