Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics
Seokho Moon,Jiye Kim,Jeonghyeon Park,Semi Im,Jawon Kim,Inyong Hwang,Jong kyu Kim
DOI: https://doi.org/10.1002/adma.202204161
IF: 29.4
2022-06-24
Advanced Materials
Abstract:Hexagonal boron nitride (h‐BN), an insulating two‐dimensional (2D) layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h‐BN research, it has been explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface free of dangling bonds and charged impurities, and high thermal conductivity. Recent discoveries of structural and optical properties of h‐BN have expanded potential applications into emerging electronics and photonics fields. h‐BN shows a very efficient deep‐ultraviolet band‐edge emission despite its indirect bandgap nature, as well as stable room temperature single‐photon emission over a wide wavelength range, showing a great potential for next‐generation photonics. In addition, h‐BN is extensively being adopted as active media for low energy electronics, including nonvolatile resistive switching memory, radio‐frequency devices, and low dielectric constant materials for next‐generation electronics. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology