Band gap of reduced graphene oxide tuned by controlling functional groups

Yiqian Jin,Yiteng Zheng,Simon G. Podkolzin,Woo Lee

DOI: https://doi.org/10.1039/c9tc07063j

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:Functionalization of reduced graphene oxide with epoxide groups allows tuning its band gap energy.

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

Robust band gaps in the graphene/oxide heterostructure: SnO/graphene/SnO.

Qing Guo,Gaoxue Wang,Ravindra Pandey,Shashi P Karna

DOI: https://doi.org/10.1039/c8cp01483c

IF: 3.3

2018-01-01

Physical Chemistry Chemical Physics

Abstract:The applicability of graphene in nanoscale devices is somewhat limited because of the absence of a finite band gap. To overcome this limitation of zero band gap, we consider vertically-stacked heterostructures consisting of graphene and SnO knowing that two-dimensional SnO films were synthesized recently. Calculations based on density functional theory find that the oxide monolayer can induce a notable band gap in graphene; 115 meV in SnO/graphene/SnO heterostructures. Additionally, the band gap of graphene can be maintained under a relatively high electric field (approximate to 10(9) V m(-1)) applied to the heterostructures because of the electrostatic screening effect of the oxide layer. The calculated results suggest the relative superiority of the graphene/oxide heterostructures over graphene/BN heterostructures for the nanoscale devices based on graphene.
Structural and Electronic Properties of Oxidized Graphene

Jia-An Yan,Lede Xian,M. Y. Chou

DOI: https://doi.org/10.1103/PhysRevLett.103.086802

2009-08-22

Abstract:We have systematically investigated the effect of oxidation on the structural and electronic properties of graphene based on first-principles calculations. Energetically favorable atomic configurations and building blocks are identified, which contain epoxide and hydroxyl groups in close proximity with each other. Different arrangements of these units yield an LDA band gap over a range of a few eV. These results suggest the possibility of creating and tuning the band gap in graphene by varying the oxidation level and the relative amount of epoxide and hydroxyl functional groups on the surface.

Mesoscale and Nanoscale Physics,Materials Science
Evolution of the Band-Gap and Optical Properties of Graphene Oxide with Controllable Reduction Level

Yan Shen,Songbo Yang,Peng Zhou,Qingqing Sun,Pengfei Wang,Li Wan,Jing Li,Liangyao Chen,Xianbao Wang,Shijin Ding,David Wei Zhang

DOI: https://doi.org/10.1016/j.carbon.2013.06.007

IF: 10.9

2013-01-01

Carbon

Abstract:The dependence of the absorbance of few-layer graphene oxide on reduction level is shown to originate from different inter- and intra-band transitions using infrared–visible spectroscopy. In addition, the band-gap of reduced graphene oxide is tunable from 2 to 0.02eV depending on its reduction level. These results indicate that reduced graphene oxide possesses great potential as a candidate for photodetection in the mid-infrared range by controlling its band-gap. This study not only gives further insight into the absorption mechanism of graphene oxide reduced to different levels, but also reveals a way to tune and measure the band-gap of graphene-based materials using a simple, economical, and nondestructive approach. This approach should be readily adapted for use in photodetection applications.
Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices

Hang Zhang,Elena Bekyarova,Jhao-Wun Huang,Zeng Zhao,Wenzhong Bao,Fenglin Wang,Robert C. Haddon,Chun Ning Lau

DOI: https://doi.org/10.1021/nl200803q

2012-01-21

Abstract:Chemical functionalization is a promising route to band gap engineering of graphene. We chemically grafted nitrophenyl groups onto exfoliated single-layer graphene sheets in the form of substrate-supported or free-standing films. Our transport measurements demonstrate that non-suspended functionalized graphene behaves as a granular metal, with variable range hopping transport and a mobility gap ~ 0.1 eV at low temperature. For suspended graphene that allows functionalization on both surfaces, we demonstrate tuning of its electronic properties from a granular metal to a gapped semiconductor, in which charge transport occurs via thermal activation over a gap ~ 80 meV. This non-invasive and scalable functionalization technique paves the way for CMOS-compatible band gap engineering of graphene electronic devices.

Mesoscale and Nanoscale Physics
Why the Band Gap of Graphene is Tunable on Hexagonal Boron Nitride

Erjun Kan,Hao Ren,Fang Wu,Zhenyu Li,Ruifeng Lu,Chuanyun Xiao,Kaiming Deng,Jinlong Yang

DOI: https://doi.org/10.1021/jp2106988

2012-01-01

The Journal of Physical Chemistry C

Abstract:The electronic properties of a graphene–boron nitride (G/BN) bilayer have been carefully investigated by first-principles calculations. We find that the energy gap of graphene is tunable from 0 to 0.55 eV and sensitive to the stacking order and interlayer distances of the G/BN bilayer. By electronic structure analysis and tight-binding simulations, we conclude that the charge redistribution within graphene and charge transfer between graphene and BN layers determine the energy gap of graphene, through modification of the on-site energy difference of carbon p orbitals at two sublattices. On the basis of the revealed mechanism, we also predict how to engineer the band gap of graphene.
Tuning the Band Gap in Silicene by Oxidation

Yi Du,Jincheng Zhuang,Hongsheng Liu,Xun Xu,Stefan Eilers,Kehui Wu,Peng Cheng,Jijun Zhao,Xiaodong Pi,Khay Wai See,Germanas Peleckis,Xiaolin Wang,Shi Xue Dou

DOI: https://doi.org/10.1021/nn504451t

IF: 17.1

2014-01-01

ACS Nano

Abstract:Silicene monolayers grown on Ag(111) surfaces demonstrate a band gap that is tunable by oxygen adatoms from semimetallic to semiconducting type. With the use of low-temperature scanning tunneling microscopy, we find that the adsorption configurations and amounts of oxygen adatoms on the silicene surface are critical for band gap engineering, which is dominated by different buckled structures in √13 × √13, 4 × 4, and 2√3 × 2√3 silicene layers. The Si-O-Si bonds are the most energy-favored species formed on √13 × √13, 4 × 4, and 2√3 × 2√3 structures under oxidation, which is verified by in situ Raman spectroscopy as well as first-principles calculations. The silicene monolayers retain their structures when fully covered by oxygen adatoms. Our work demonstrates the feasibility of tuning the band gap of silicene with oxygen adatoms, which, in turn, expands the base of available two-dimensional electronic materials for devices with properties that is hardly achieved with graphene oxide.
Tuning the photoluminescence of graphene quantum dots through the charge transfer effect of functional groups.

S. Hong,S. Jin,Seokwoo Jeon,G. Jun,Da Hye Kim

DOI: https://doi.org/10.1021/nn304675g

IF: 17.1

2013-01-02

ACS Nano

Abstract:The band gap properties of graphene quantum dots (GQDs) arise from quantum confinement effects and differ from those in semimetallic graphene sheets. Tailoring the size of the band gap and understanding the band gap tuning mechanism are essential for the applications of GQDs in opto-electronics. In this study, we observe that the photoluminescence (PL) of the GQDs shifts due to charge transfers between functional groups and GQDs. GQDs that are functionalized with amine groups and are 1-3 layers thick and less than 5 nm in diameter were successfully fabricated using a two-step cutting process from graphene oxides (GOs). The functionalized GQDs exhibit a redshift of PL emission (ca. 30 nm) compared to the unfunctionalized GQDs. Furthermore, the PL emissions of the GQDs and the amine-functionalized GQDs were also shifted by changes in the pH due to the protonation or deprotonation of the functional groups. The PL shifts resulted from charge transfers between the functional groups and GQDs, which can tune the band gap of the GQDs. Calculations from density functional theory (DFT) are in good agreement with our proposed mechanism for band gap tuning in the GQDs through the use of functionalization.

Chemistry,Medicine,Physics,Materials Science
Band-Gap Engineering with Hybrid Graphane−Graphene Nanoribbons

yunhao lu,Y. P. Feng

DOI: https://doi.org/10.1021/jp9067284

2009-01-01

Abstract:The electronic structures of graphane nanoribbons and hybrid graphane-graphene nanoribbons were investigated using the first-principles method. Energy gaps of both zigzag and armchair graphane nanoribbons were found to increase as the nanoribbons become narrower. The hybrid graphane-graphene nanoribbons show structure dependence and tunable electronic properties. The band gap of armchair hybrid nanoribbons is dominated by its graphene section, whereas a spin-split defect level emerges in the band gap of zigzag hybrid nanoribbons, which depends on the hydrogenation of the graphane-graphene interface zigzag carbon chain. These findings provide a basis for achieving band gap engineering and controllable spin filters based only on light elements.
Bandgap tailoring and synchronous microdevices patterning of graphene oxides

Li Guo,Ruiqiang Shao,Yonglai Zhang,Haobo Jiang,Xianbin Li,Shengyi Xie,Binbin Xu,Qidai Chen,Junfeng Song,Hongbo Sun

DOI: https://doi.org/10.1021/jp209843m

2012-01-01

Abstract:Reported here is femtosecond laser mediated bandgap tailoring of graphene oxides (GOs) for direct fabrication of graphene-based microdevices. When femtosecond laser pulses were used to reduce and pattern GO, oxygen contents in the reduced region could be modulated by varying the laser power. In this way, the bandgap of reduced GO was precisely modulated from 2.4 to 0.9 eV by tuning the femtosecond laser power from 0 to 23 mW. Through the first-principle study, the essence of GO bandgap tailoring is proved to be femtosecond laser reduction induced oxygen-content modulation. As representative illustrations, bottom-gate graphene FETs were fabricated in situ by using femtosecond laser reduced GO as the channel material, and an optimized room temperature on off ratio of 56 is obtained. The controlled reduction of GO by femtosecond laser contributes great potential for bandgap tailoring and microdevices patterning of graphene future electronics. toward
Photo-induced free radical modification of graphene.

Liming Zhang,Lin Zhou,Mingmei Yang,Zhirong Liu,Qin Xie,Hailin Peng,Zhongfan Liu

DOI: https://doi.org/10.1002/smll.201203152

IF: 13.3

2013-01-01

Small

Abstract:Graphene has stimulated enormous interest due to its intriguing structure and fascinating properties. The extremely high carrier mobility, mechanical flexibility, and optical transparency as well as the versatility for band structure engineering make graphene a promising candidate for next-generation carbon-based electronic devices. Graphene chemistry, the covalent functionalization of graphene as a 2D giant molecule, offers a promising direction to controllably tailor its properties through the introduction of various chemical decorations. One of the great challenges for graphene functionalization originates from its strong chemical stability, thus highly reactive chemical species are needed as the reactants. In recent years, novel photochemical approaches have been developed to achieve efficient graphene modification and bandgap modulation, following a general concept of Photochemical Bandgap Engineering of Graphene. In this article, such kinds of photochemical graphene engineering are demonstrated, together with a brief discussion on the future directions, challenges, and opportunities in this fascinating research area.
Organometallic Hexahapto-Functionalized Graphene: Band Gap Engineering with Minute Distortion to the Planar Structure

Jun Dai,Yu Zhao,Xiaojun Wu,Xiao Cheng Zeng,Jinlong Yang

DOI: https://doi.org/10.1021/jp408347w

2013-01-01

The Journal of Physical Chemistry C

Abstract:Motivated from experimentally realized Cr-chemisorbed graphene, we have systematically explored the electronic properties of organometallic complexes of graphene with covalent monohexahapto-TM (TM = Cr, Fe, Ni) bonds using density-functional theory (DFT) calculations. We show that besides Cr, Fe and Ni can also bind strongly with the graphene. At the experimentally suggested coverage ratio (TM:C = 1:18, TM = Cr, Fe, Ni), our calculations suggest that the computed band gap of perfectly arranged networks of (eta(6)-graphene)-Cr(CO)(3), (eta(6)-graphene)-Fe(CO)(2), and (eta(6)-graphene)-NiCO can be enlarged to 1.08, 0.61, and 0.29 eV, respectively. The inconsistency between the computed gap (1.08 eV) and the experimental gap (similar to 10 meV) for the (eta(6)-graphene)-Cr(CO)(3) is explained, which is possibly due to the existence of regions with relatively lower coverage ratio, in view of the much smaller band gap for (eta(6)-graphene)-Cr(CO)(3) with Cr:C = 1:32 (54 meV) and with Cr:C = 1:50 (20 meV), respectively. Both band gap values are much closer to the measured band gap (similar to 10 meV). Yet, the functionalized graphene shows little structural distortion from its original planar structure. The notable features of the direct band gaps along with the planar structure render the TM-functionalized graphenes quite appealing for applications not only in nanoelectronics but also in optoelectronics such as the infrared detector and solar cell photoanode.
Optical Investigation of Reduced Graphene Oxide by Spectroscopic Ellipsometry and the Band-Gap Tuning

Y. Shen,P. Zhou,Q. Q. Sun,L. Wan,J. Li,L. Y. Chen,D. W. Zhang,X. B. Wang

DOI: https://doi.org/10.1063/1.3646908

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Spectroscopic ellipsometry was used to characterize the optical response of few layer reduced graphene oxide and graphene oxide in visible range. Lorentz oscillator model is added to analyze the ellipsometric parameters. The experiment shows the optical response of few layer reduced graphene oxide and monolayer exfoliated graphene in visible range is quite similar with slight difference due to the structure defects. The Lorentz oscillator model gives experimental support to investigate the band-gap tuning through the reduction process in details.
Tunable bandgap in graphene by the controlled adsorption of water molecules.

Fazel Yavari,Christo Kritzinger,Churamani Gaire,Li Song,Hemtej Gulapalli,Theodorian Borca-Tasciuc,Pulickel M Ajayan,Nikhil Koratkar

DOI: https://doi.org/10.1002/smll.201001384

IF: 13.3

2010-01-01

Small

Abstract:Lack of a bandgap limits the utilization of graphene in nanoelectronic and nanophotonic devices. It is shown that a tunable bandgap of up to ≈0.2 eV can be engineered by controlled adsorption of water molecules to a graphene surface. The effect is reversible, and the energy gap reduces to ≈0.029 eV as the humidity is brought down to zero.
Tuning the Band Gap of Stable and Dispersible Graphene Aqueous Solution Via Hydrothermal Reduction Method

Zhanglian Hong,Xiaoliang Jiao,Qiuyue Gao,Yuewei Zhang,Chan He,Jingxia Yang,Yi Liu

DOI: https://doi.org/10.1080/10584587.2013.788951

2013-01-01

Integrated Ferroelectrics

Abstract:A well dispersed graphene aqueous solution was achieved by hydrothermal reduction method, in which graphene oxide (GO) was reduced by employing an effective reagent of hydrazine hydrate (N2H4 center dot H2O). The reduction degree of reduced graphene oxide (RGO) was preciously regulated via different reduction time. The obtained products were confirmed by X-ray diffraction, scanning and transmission electron microscopy, Fourier-transform infrared spectroscopy. The energy band gap of reduced graphene with different reaction time was characterized by ultraviolet-visible spectroscopy. The results showed that hydrothermal reduction method is a simple and efficient approach to synthesizing the dispersed graphene nanosheets aqueous solution, which is stable for several months without obvious precipitates or stratification in basic solvent. The energy band gap of different degree of reduction RGO can be tuned tremendously via controlling the reduction time.
Electronic and Optical Properties of Edge-Functionalized Graphene Quantum Dots and the Underlying Mechanism

Yunhai Li,Huabing Shu,Xianghong Niu,Jinlan Wang

DOI: https://doi.org/10.1021/acs.jpcc.5b05935

2015-01-01

Abstract:We systematically investigate the electronic structure and optical properties of edge-functionalized graphene quantum dots (GQDs) utilizing density functional and many-particle perturbation theories. A mechanism based on the competition and collaboration between frontier orbital hybridization and charge transfer is proposed. The frontier orbital hybridization of the GQD moiety and functional group reduces the energy gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO), while the charge transfer from the GQD moiety to the functional group enlarges it. Contrarily, frontier orbital hybridization and charge transfer collaborate to shift down the energy of the first bright exciton, the former through activation of low-lying dark excitons and the latter via increased exciton binding energy. Functional groups containing a carbon oxygen double bond (C=0), namely, aldehyde (-CHO), ketone (-COCH3), and carboxyl (-COOH), are more favorable for tailoring the electronic and optical properties of pristine GQD among all the functional groups investigated here. The amino group (-NH2), although frequently employed in experiments, has a much weaker influence on electronic structure since the large charge transfer cancels out the effect of frontier orbital hybridization.
Band Gap Engineering of BiOI Via Oxygen Vacancies Induced by Graphene for Improved Photocatalysis

Xuejun Ren,Jingwen Yao,Lei Cai,Jibiao Li,Xingzhong Cao,Yanfeng Zhang,Baoyi Wang,Yu Wei

DOI: https://doi.org/10.1039/c8nj05538f

IF: 3.3

2019-01-01

New Journal of Chemistry

Abstract:A reduced graphene oxide–bismuth iodide oxide (rGO–BiOI) composite was prepared by a thermal reduction method.
Controllable bandgaps of multilayer graphene quantum dots tuned by stacking thickness, interlayer twist and external electric field

Xian Wang,Yingqi Cui,Xiangyu Huo,Li Zhang,Mingli Yang

DOI: https://doi.org/10.1007/s10853-023-08780-1

IF: 4.5

2023-07-25

Journal of Materials Science

Abstract:Recent advances in the precise preparation, process, and manipulation of multilayer graphene quantum dots make it possible to engineer effectively their energy gaps (Δ ε ) by tuning the stacking thickness, interlayer twist angle, quantum dot size, and external electric field strength. The coupling mechanism among these operations is however ambiguous. Using first-principles calculations, the Δ ε variations of multilayer graphene quantum dots are studied at a varying stacking thickness, twist angle, and field strength. The combination of these diverse operations not only widens the Δ ε windows but also generates quasi-continuous Δ ε variations. Every operation may alter the interlayer coupling strength, which becomes more sensitive under the combination of two or more operations, resulting from the different responses of the Kohn–Sham orbitals around the Fermi level against the operations. Analysis of the vertical polarizability reveals that interlayer charge transfer ability is tuned by the operations, which accounts for the variations in interlayer coupling and consequently in Δ ε . Understanding the coupling mechanism is helpful for the precise control over the band gaps of the multilayer graphene quantum dots in their optoelectronic applications.

materials science, multidisciplinary
Recent Progress in Preparation and Band-gap Modulation of Graphene

JIAO Xiaoliang,ZHANG Yuewei,HE Chan,XU Jianfeng,YANG Jingxia,HONG Zhanglian

2012-01-01

Abstract:Graphene,with its unique structure and properties,has become a hot topic in the research of nano-electronics,semiconductor devices and so on.The properties and preparations of graphene are summarized,and the focus is placed on the manipulation of the bandgap of grephene.Different manipulating methods and their corresponding principles are specified,and the research status of various methods,especially the tunable range of the graphene bandgap are summarized.The application prospects of graphene with tunable gap which related to nano-electronic device are introduced.Finally,trends for future research and development are proposed.
Tunable Bending Modulus and Bending Limit of Oxidized Graphene

Lizhao Liu,Xinying Li,Zheng Liu,Shuyu Dai,Xiaoming Huang,Jijun Zhao

DOI: https://doi.org/10.1039/c9nr07282a

IF: 6.7

2020-01-01

Nanoscale

Abstract:Graphene is highly flexible and widely used in flexible devices. However, is the oxidized graphene more flexible than graphene? This is still under debate between simulations and experiments. By employing density functional theory calculations, we show that the bending modulus of oxidized graphene is quite tunable by changing the type and coverage of the functional groups, as well as the bending direction. The hydroxyl increases the bending modulus of graphene, but epoxide can degrade the bending modulus in the armchair bending direction, making the oxidized graphene more flexible than graphene. On the other hand, there exists a curvature limit during bending the oxidized graphene, where OH hydrogen bonds start to transform into O-H covalent bonds. Generally, our results demonstrate the effects of the functional groups and bending direction on the flexibility of oxidized graphene, which should be helpful to design graphene-based flexible devices.
Tuning the band gap of graphene nanoribbons synthesized from molecular precursors.

Yen-Chia Chen,Dimas G de Oteyza,Zahra Pedramrazi,Chen Chen,Felix R Fischer,Michael F Crommie

DOI: https://doi.org/10.1021/nn401948e

IF: 17.1

2013-01-01

ACS Nano

Abstract:A prerequisite for future graphene nanoribbon (GNR) applications is the ability to fine-tune the electronic band gap of GNRs. Such control requires the development of fabrication tools capable of precisely controlling width and edge geometry of GNRs at the atomic scale. Here we report a technique for modifying GNR band gaps via covalent self-assembly of a new species of molecular precursors that yields n = 13 armchair GNRs, a wider GNR than those previously synthesized using bottom-up molecular techniques. Scanning tunneling microscopy and spectroscopy reveal that these n = 13 armchair GNRs have a band gap of 1.4 eV, 1.2 eV smaller than the gap determined previously for n = 7 armchair GNRs. Furthermore, we observe a localized electronic state near the end of n = 13 armchair GNRs that is associated with hydrogen-terminated sp(2)-hybridized carbon atoms at the zigzag termini.

Band gap of reduced graphene oxide tuned by controlling functional groups

Robust band gaps in the graphene/oxide heterostructure: SnO/graphene/SnO.

Structural and Electronic Properties of Oxidized Graphene

Evolution of the Band-Gap and Optical Properties of Graphene Oxide with Controllable Reduction Level

Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices

Why the Band Gap of Graphene is Tunable on Hexagonal Boron Nitride

Tuning the Band Gap in Silicene by Oxidation

Tuning the photoluminescence of graphene quantum dots through the charge transfer effect of functional groups.

Band-Gap Engineering with Hybrid Graphane−Graphene Nanoribbons

Bandgap tailoring and synchronous microdevices patterning of graphene oxides

Photo-induced free radical modification of graphene.

Organometallic Hexahapto-Functionalized Graphene: Band Gap Engineering with Minute Distortion to the Planar Structure

Optical Investigation of Reduced Graphene Oxide by Spectroscopic Ellipsometry and the Band-Gap Tuning

Tunable bandgap in graphene by the controlled adsorption of water molecules.

Tuning the Band Gap of Stable and Dispersible Graphene Aqueous Solution Via Hydrothermal Reduction Method

Electronic and Optical Properties of Edge-Functionalized Graphene Quantum Dots and the Underlying Mechanism

Band Gap Engineering of BiOI Via Oxygen Vacancies Induced by Graphene for Improved Photocatalysis

Controllable bandgaps of multilayer graphene quantum dots tuned by stacking thickness, interlayer twist and external electric field

Recent Progress in Preparation and Band-gap Modulation of Graphene

Tunable Bending Modulus and Bending Limit of Oxidized Graphene

Tuning the band gap of graphene nanoribbons synthesized from molecular precursors.