Tunable moiré bandgap in hBN-aligned bilayer graphene device with in-situ electrostatic gating
Hanbo Xiao,Han Gao,Min Li,Fanqiang Chen,Qiao Li,Yiwei Li,Meixiao Wang,Fangyuan Zhu,Lexian Yang,Feng Miao,Yulin Chen,Cheng Chen,Bin Cheng,Jianpeng Liu,Zhongkai Liu
2024-05-24
Abstract:Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence of a direct method for observing changes of the band gap in momentum space. In this study, we employ advanced spatial- and angle-resolved photoemission spectroscopy technique to directly visualize the gap formation in bilayer graphene, modulated by both displacement fields and moiré potentials. The application of displacement field via in-situ electrostatic gating introduces a sizable and tunable electronic bandgap, proportional to the field strength up to 100 meV. Meanwhile, the moiré potential, induced by aligning the underlying hexagonal boron nitride substrate, extends the bandgap by ~ 20 meV. Theoretical calculations, effectively capture the experimental observations. Our investigation provides a quantitative understanding of how these two mechanisms collaboratively modulate the band gap in bilayer graphene, offering valuable guidance for the design of graphene-based electronic devices.
Mesoscale and Nanoscale Physics,Materials Science