Abstract:Graphene demonstrates potential in practical applications due to its excellent electronic and thermal properties. Typical graphene field-effect transistors and interconnects built on conventional SiO2/Si substrates reveal a breakdown current density on the order of 1 uA/nm2 (i.e. 10^8 A/cm2) which is approximately 100 times larger than the fundamental limit for metals, but still smaller than the maximum achieved in carbon nanotubes. In this dissertation research I investigated different methods of fabricating graphene devices and interconnects on synthetic diamond and tested their current-voltage and thermal characteristics. Several types of these graphene-on-diamond devices have been compared to graphene-on-SiO2/Si devices as a baseline reference. It was established that by replacing SiO2 with synthetic diamond one can substantially increase the current carrying capacity of graphene to a level as high as ~18 uA/nm2 in ambient conditions. The obtained results indicate that graphene's current-induced breakdown is thermally activated. It was also found that the current carrying capacity of graphene can be improved not only on single-crystal diamond substrates, but also on inexpensive ultrananocrystalline diamond (UNCD). Additionally, UNCD can be produced in low-temperature processes compatible with conventional Si technology which is attributed to the decreased thermal resistance of ultrananocrystalline diamond layers at elevated temperatures. The obtained results are important for graphene's applications in interconnects and transistors and can lead to the new planar sp2-on-sp3 carbon-on-carbon technology.

Temperature and Size Effect on the Electrical Properties of Monolayer Graphene based Interconnects for Next Generation MQCA based Nanoelectronics

Structure-mediated thermal transport of monolayer graphene allotropes nanoribbons

Electrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnects

Carbon‐Based Interconnects for RF Nanoelectronics

Electrothermal Characterization of Multilevel Cu-Graphene Heterogeneous Interconnects in the Presence of an Electrostatic Discharge (ESD)

Temperature Dependent Characteristics of Graphene/silicon Schottky Junction

Graphene-Nanotube 3d Networks: Intriguing Thermal and Mechanical Properties

Temperature Sensitivity of Electrical Resistivity of Graphene/Copper Hybrid Nano Ribbon Interconnect: A First Principle Study

Temperature Coefficient of Resistance in Graphene-Coated Cu from First Principles

Giant Carrier Mobility in Graphene with Enhanced Shubnikov–de Haas Quantum Oscillations: Implications for Low-Power-Consumption Device Applications

Low-temperature quantum transport in CVD-grown single crystal graphene

Carbon-based Interconnect: Performance, Scaling and Reliability of 3D Stacked Multilayer Graphene System

Graphene-on-Diamond Devices with Enhanced Current-Carrying Capacity: Carbon sp2-on-sp3 Technology

Carbon Sp2-on-sp3 Technology: Graphene-on-Diamond Devices and Interconnects

Thermal Conductivity of Graphene on Nanostructure Size from Nonequilibrium Molecular Dynamics Simulations

Extremely High Thermal Conductivity of Graphene: Prospects for Thermal Management Applications in Silicon Nanoelectronics

Resistance Quenching in Graphene Interconnects

High-Temperature Quantum Hall Effect in Graphite-Gated Graphene Heterostructure Devices with High Carrier Mobility

Temperature and interlayer coupling induced thermal transport across graphene/2D-SiC van der Waals heterostructure

Thermoelectric Limitations of Graphene Nanodevices at Ultrahigh Current Densities

Charge Crowding in Graphene-Silicon Diodes