Contributions of chemical potential to the diffusive Seebeck coefficient for bulk semiconductor materials

Guangxi Wu,Xiong Yu
DOI: https://doi.org/10.1140/epjp/s13360-020-00480-y
2020-06-01
The European Physical Journal Plus
Abstract:Predicting the behaviors of thermoelectric material, such as the Seebeck coefficient, using first-principle material properties will accelerate material design and selection to optimize the performance of thermoelectric generator. This paper presents an analytic framework for the Seebeck coefficient. Particularly, it elucidates the important contribution of chemical potential to the overall Seebeck coefficient. This factor, however, is often neglected when Seebeck coefficient is defined based on only electrostatic potential or when methods based on the Boltzmann transportation equation is used to derive the expression of the Seebeck coefficient. (The diffusion component due to chemical potential gradient is generally ignored.) In this paper, methods based on local equilibrium assumption and Fermi–Dirac distribution are utilized to derive the expressions for the Seebeck coefficients using the first-principle parameters. The analytic expression of both the total Seebeck coefficient and the contribution from chemical potential component is derived, which is solved using numerical methods. A case study on a popular thermoelectric material bismuth telluride (both n-type and p-type) is conducted based on the derived expressions. Results of numerical calculations prove that chemical potential contributes significantly to the total Seebeck coefficient of bismuth telluride (76% for n-type and 88% for p-type materials, respectively, at room temperature if the materials are doped with shallow energy level impurities) when working under optimal Seebeck coefficient conditions.
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