Abstract:Ge2Sb2Te5 (GST) is a kind of non-volatile chalcogenide phase-change material, which has a significant difference in permittivity between its amorphous and crystalline states in the infrared range. On account of this remarkable property, the combination of GST and metamaterials has great potential in tunable meta-devices. In this paper, a perfect absorber based on a nanocross-resonator array stacked above a GST spacer layer and an Au mirror (i.e., a metal-dielectric-metal configuration) is designed and experimentally demonstrated. A thin indium tin oxide (ITO) protective layer is inserted between the GST spacer and the Au resonator to avoid heat-induced oxidation of the GST layer during phase transition. We found that the ITO layer not only can protect the GST layer from deterioration, but also allows a significant blue shift in the absorption peak from 1.808 μm to 1.559 μm by optimizing the thickness of the two dielectric layers without scaling down the size of the metal structure, which provides a more feasible idea in pushing the absorption peak to higher frequency. The LC circuit model is presented to explain this blue-shift phenomenon, which is mainly attributed to the engineering of the dielectric environment of the parallel plate capacitance. In addition, such good performance in dynamitic modulation makes this perfect absorber a robust candidate for optical switching and modulating in various situations.

Near-Infrared Rewritable, Non-Volatile Subwavelength Absorber Based on Chalcogenide Phase Change Materials

A large scale perfect absorber and optical switch based on phase change material (Ge 2 Sb 2 Te 5 ) thin film

Tunable Near-Infrared Perfect Absorber Based on the Hybridization of Phase-Change Material and Nanocross-Shaped Resonators

Tunable broadband near-infrared absorber based on ultrathin phase-change material

Nonvolatile High-Contrast Whole Long-Wave Infrared Emissivity Switching Based on In3SbTe2

Intensity Switchable and Wide-Angle Mid-Infrared Perfect Absorber with Lithography-Free Phase-Change Film of Ge2Sb2Te5

Magnetron-sputtered and Thermal-Evaporated Low-Loss Sb-Se Phase-Change Films in Non-Volatile Integrated Photonics

Broadband switchable infrared absorbers using phase-change materials

Nonvolatile Tunable Silicon-Carbide-based Midinfrared Thermal Emitter Enabled by Phase-Changing Materials.

Chalcogenide hyperbolic metamaterial with switchable negative refraction

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A Narrowband Mid-infrared Absorber with Tunable Peak Absorbance and Nearly Unchanged Peak Wavelength Using a Phase Changing Material

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Wavelength-tunable mid-infrared thermal emitters with a non-volatile phase changing material.

Design of hybrid narrow-band plasmonic absorber based on chalcogenide phase change material in the infrared spectrum

All-dielectric phase-change reconfigurable metasurface

Terahertz multi-level nonvolatile optically rewritable encryption memory based on chalcogenide phase-change materials

Low‐Power Phase Transition of Chalcogenide Glass Using Au Nanoparticle Plasmon Resonance

Resonant-enhanced Optical Switch Based on Non-Volatile Phase Change Material GST

Multi-spectral programmable absorbers