Abstract:Monolayer molybdenum disulfide (MoS2) is a promising semiconductor channel material for future electronics due to its atomic thickness and high mobility. However, conventional back-gate MoS2 transistors suffer from substantial scattering caused by substrate and surface adsorbates, which impair carrier mobility and device reliability. In this work, we demonstrate an exemplary dielectric engineering approach that uses atomic-layer-deposited hafnium oxide (HfO2) as the gate dielectric and channel passivation layer to improve device performance and positive bias instability. The large-single-crystal monolayer MoS2 film was directly synthesized on SiO2/Si substrates by a low-pressure chemical vapor deposition method. MoS2 transistors with various dielectrics were fabricated and characterized for a fair comparison. The mobility increased from 4.2 to 19.9 cm2/V·s by suppressing charged impurities and phonon scattering when transferring the MoS2 channel from 100 nm SiO2 substrates to 20 nm HfO2 substrates. Passivation of another 10 nm HfO2 on the back-gate transistors further increased the mobility to 36.4 cm2/V·s with a high drive current of 107 μA/μm. Moreover, the threshold voltage shift of the passivated transistor was reduced by about 58% from 1.9 to 0.8 V under positive bias stress. This is due to the fact that channel passivation with HfO2 effectively eliminated charge trapping of adsorbed substances. These results reveal that HfO2 gate dielectric and passivation by atomic-layer deposition are effective methods to improve the performance and stability of MoS2 devices.

Passivation layer effect on the positive bias temperature instability of molybdenum disulfide thin film transistors

PBTI Investigation of MoS2 N-Mosfet with Al2O3 Gate Dielectric

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

Trapping and Detrapping of Oxide Border Traps in Al2o3 Gate Dielectric in Mos2 N-Mosfets under Pbti Stress

Effect of Sc 2 O 3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

Influence Of Passivation Layers On Positive Gate Bias-Stress Stability Of Amorphous Ingazno Thin-Film Transistors

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors

Electrical Characterization of Back-Gated Bi-Layer MoS2 Field-Effect Transistors and the Effect of Ambient on Their Performances

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

Threshold Voltage Instabilities In Perpetual Switching Of Low-Voltage Thin-Film Transistors With Solution-Processed In2o3 Channel Layer

Charge neutral MoS2 field effect transistors through oxygen plasma treatment

Impact of Deposition Temperature of the Silicon Oxide Passivation on the Performance of Indium Zinc Oxide Thin-Film Transistors

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

Positive Bias Temperature Instability in SiC-Based Power MOSFETs

Influence of passivation deposition on the performance of In-Zn-O thin-film transistors based on etch-stopper structure

P‐1.9: Enhanced Stability Under Positive Bias Temperature Stress of Ln‐Doped InZnO Thin Film Transistors Fabricated with Back‐channel‐etch Structure

Positive-Bias Stress Stability of Solution-Processed Oxide Semiconductor Thin-Film Transistor