Abstract:Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.

Low Temperature Deposition of High‐Quality Silicon Oxynitride (SiON) for OLED Encapsulation via Conventional PECVD

Low Temperature Deposition of High‐Quality Silicon Oxynitride (SiON) for OLED Encapsulation via Conventional PECVD

High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Reliable Simulation Analysis of Interface and SiON Degradation Effects on Water Vapor Barrier in Laminated Thin‐Film Encapsulation

A Study of Thin Film Encapsulation on Improving Electrical Characteristics and Reliability for Flexible OLEDs

A New Thin-Film Encapsulation Technology for Organic Light-Emitting Devices

A novel and efficient technology of depositing Al2O3 film for OLEDs thin film encapsulation

Low-Temperature Remote Plasma Enhanced Atomic Layer Deposition of Zro2/Zircone Nanolaminate Film for Efficient Encapsulation of Flexible Organic Light-Emitting Diodes

High Barrier Properties of Transparent Thin-Film Encapsulations for Top Emission Organic Light-Emitting Diodes

Efficient Multi-Barrier Thin Film Encapsulation of OLED Using Alternating Al2O3 and Polymer Layers.

Composite Encapsulation Films with Ultrahigh Barrier Performance for Improving the Reliability of Blue Organic Light‐Emitting Diodes

High-performance Multilayer Thin-Film Encapsulation for Organic Micro-Displays by Inserting in Situ Plasma Oxidized Al Layers Between SiO X Layers

Facilitation of Transparent Gas Barrier Using SiNx/a-IZO Lamination for Organic Light Emitting Diodes

Thin Film Encapsulation for the Organic Light-Emitting Diodes Display Via Atomic Layer Deposition

Rapid-deposited High-Performance Submicron Encapsulation Film with in Situ Plasma Oxidized Al Layer Inserted

Low-Temperature Floating Plasma Oxidation of Poly-SiGe

Realization of Thin Film Encapsulation by Atomic Layer Deposition of Al2O3 at Low Temperature

Optimization Of Al2o3 Films Deposited By Ald At Low Temperatures For Oled Encapsulation

Low-temperature Multi-Layer Al2 O3/TiO2 Composite Encapsulation Thin Film by Atomic Layer Deposition