Ductile van der Waals materials

Xiaodong Han

DOI: https://doi.org/10.1126/science.abd4527

IF: 56.9

2020-07-31

Science

Abstract:Normally brittle, single crystals of InSe can be mechanically rolled like a metal into thin films

multidisciplinary sciences

What problem does this paper attempt to address?

Orientation-dependent Large Plasticity of Single-Crystalline Gallium Selenide

Heyi Wang,Hong Wu,Weitong Lin,Bin Zhang,Xiaocui Li,Yang Zhang,Sufeng Fan,Chaoqun Dang,Yingxin Zhu,Shijun Zhao,Xiaoyuan Zhou,Yang Lu

DOI: https://doi.org/10.1016/j.xcrp.2022.100816

IF: 8.9

2022-01-01

Cell Reports Physical Science

Abstract:Unlike metals and alloys with high ductility, inorganic semiconductors are mostly ceramics with brittle nature due to covalent/ionic bonding. Recent studies have shown that some layered/van der Waals semiconductors could exhibit substantial room-temperature ductility, despite the fact that the underlying mechanisms remain to be understood. Here, we report that the van der Waals semiconductor gallium(II) selenide (GaSe) can have crystal-orientation dependent large plasticity at room temperature. Through in situ tensile and compressive experiments inside electron microscopes, we demonstrate that microfabricated GaSe can have substantial ductility loaded along and slanted with the intralayer direction while showing predominantly elastic deformation perpendicular to the intralayer direction until brittle fracture. We further reveal that, despite the interlayer gliding as the main mechanism, cross-layer slips induced by buckling associated with stacking faults also contribute to the plasticity. This study offers insights to understand the ductility and plasticity of van der Waals semiconductors and shows promising flexible/deformable electronics and energy-device applications.
Structural Phase Transition of Multilayer VSe2.

Dian Li,Xiong Wang,Chi-Ming Kan,Daliang He,Zejun Li,Qing Hao,Hongbo Zhao,Changzheng Wu,Chuanhong Jin,Xiaodong Cui

DOI: https://doi.org/10.1021/acsami.0c04449

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:Vanadium diselenide (VSe2), a member of the transition metal dichalcogenides (TMDs) family, is emerging as a promising twodimensional (2D) candidate for the electronic and spintronic device with exotic properties including charge/spin density wave and ferromagnetism. The bulk crystal VSe2 exists in a crystallographic form of 1T-phase with metallic behavior. In this paper, we report a structural phase transition of multilayer VSe2 from 1T to 2H through annealing at 650 K, accompanying a metal-insulator transition. We observe that the 2H-phase is more thermodynamically favorable than the 1T-phase at 2D.
Designing Inorganic Semiconductors with Cold‐Rolling Processability

Xu‐Dong Wang,Jieling Tan,Jian Ouyang,Hang‐Ming Zhang,Jiang‐Jing Wang,Yuecun Wang,Volker L. Deringer,Jian Zhou,Wei Zhang,En Ma

DOI: https://doi.org/10.1002/advs.202203776

IF: 15.1

2022-08-30

Advanced Science

Abstract:Systematic ab initio calculations of van der Waals semiconductors homologous to InSe are reported, leading to material‐property maps that forecast trends in both the susceptibility to interlayer slip and the intralayer fracture toughness against cracking. The cold‐rolling shaping capability of GaSe is validated in experiments. This work offers alloy selection and design toward processing‐friendly group‐III chalcogenides for practical applications. While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets and foils of inorganic semiconductors is therefore a bottleneck problem, severely restricting their use in flexible electronic applications. It is recently reported that a few single‐crystalline 2D van der Waals (vdW) semiconductors, such as InSe, are deformable under compressive stress. Here it is demonstrated that intralayer fracture toughness can be tailored via compositional design to make inorganic semiconductors processable by cold rolling. Systematic ab initio calculations covering a range of van der Waals semiconductors homologous to InSe are reported, leading to material‐property maps that forecast trends in both the susceptibility to interlayer slip and the intralayer fracture toughness against cracking. GaSe is predicted, and experimentally confirmed, to be practically amenable to being rolled to large (three quarters) thickness reduction and length extension by a factor of three. The fracture toughness and cleavage energy are predicted to be 0.25 MPa m0.5 and 15 meV Å−2, respectively. The findings open a new realm of possibility for alloy selection and design toward processing‐friendly group‐III chalcogenides for practical applications.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Min Lin,Di Wu,Yu Zhou,Wei Huang,Wei Jiang,Wenshan Zheng,Shuli Zhao,Chuanhong Jin,Yunfan Guo,Hailin Peng,Zhongfan Liu

DOI: https://doi.org/10.1021/ja406351u

IF: 15

2013-01-01

Journal of the American Chemical Society

Abstract:The controlled production of high-quality atomically thin III-VI semiconductors poses a challenge for practical applications in electronics, optoelectronics, and energy science. Here, we exploit a controlled synthesis of single- and few-layer In2Se3 flakes on different substrates, such as graphene and mica, by van der Waals epitaxy. The thickness, orientation, nucleation site, and crystal phase of In2Se3 flakes were well-controlled by tuning the growth condition. The obtained In2Se3 flakes exhibit either semiconducting or metallic behavior depending on the crystal structures. Meanwhile, field-effect transistors based on the semiconducting In2Se3 flakes showed an efficient photoresponse. The controlled growth of atomically thin In2Se3 flakes with diverse conductivity and efficient photoresponsivity could lead to new applications in photodetectors and phase change memory devices.
Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe

Tian-Ran Wei,Min Jin,Yuecun Wang,Hongyi Chen,Zhiqiang Gao,Kunpeng Zhao,Pengfei Qiu,Zhiwei Shan,Jun Jiang,Rongbin Li,Lidong Chen,Jian He,Xun Shi

DOI: https://doi.org/10.1126/science.aba9778

IF: 56.9

2020-07-31

Science

Abstract:Deformable semiconductors Semiconductors are usually brittle and do not deform easily. Wei et al. found that bulk single crystals of indium selenide instead have excellent flexibility (see the Perspective by Han). The deformability comes from the compliant intralayer bonding between indium and selenium. The authors used these observations along with a previously discovered silver sulfide to determine a deformability factor for materials that may help find other deformable semiconductors. Science , this issue p. 542 ; see also p. 509

multidisciplinary sciences
Van der Waals semiconductor InSe plastifies by phase transformation

Yandong Sun,Yupeng Ma,Jin-yu Zhang,Tian-Ran Wei,Xun Shi,David Rodney,Ben Xu

2023-12-09

Abstract:Inorganic semiconductor materials are integral to various modern technologies, yet their brittleness and limited deformability/processability pose a significant challenge in the development of flexible, wearable, and miniaturized electronics. The recent discovery of room-temperature plasticity in a few inorganic semiconductors offers a promising pathway to address this challenge, but the deformation mechanisms of these materials remain unclear. Here, we investigate the deformation of InSe, a two-dimensional (2D) van der Waals (vdW) semiconductor with substantial plasticity. By developing a machine-learned deep potential, we perform atomistic simulations that capture the deformation features of hexagonal InSe upon out-of-plane compression. Surprisingly, we discover that InSe plastifies through a so-far unrecognized martensitic phase transformation; that is, the layered hexagonal structure is converted to a tetragonal lattice with specific orientation relationship. This observation is corroborated by high-resolution experimental observations and theory. It suggests a change of paradigm, where the design of new plastically-deformable inorganic semiconductors should focus on compositions and structures that favor phase transformations rather than traditional dislocation slip.

Materials Science
Van der Waals semiconductor InSe plastifies by martensitic transformation

Yandong Sun,Yupeng Ma,Jin-Yu Zhang,Tian-Ran Wei,Xun Shi,David Rodney,Ben Xu

DOI: https://doi.org/10.1126/sciadv.ado9593

IF: 13.6

2024-10-20

Science Advances

Abstract:Inorganic semiconductor materials are crucial for modern technologies, but their brittleness and limited processability hinder the development of flexible, wearable, and miniaturized electronics. The recent discovery of room-temperature plasticity in some inorganic semiconductors offers a promising solution, but the deformation mechanisms remain controversial. Here, we investigate the deformation of indium selenide, a two-dimensional van der Waals semiconductor with substantial plasticity. By developing a machine-learned deep potential, we perform atomistic simulations that capture the deformation features of hexagonal indium selenide upon out-of-plane compression. Unexpectedly, we find that indium selenide plastifies through a martensitic transformation; that is, the layered hexagonal structure is converted to a tetragonal lattice with specific orientation relationship. This observation is corroborated by high-resolution experimental observations and theory. It suggests a change of paradigm, where the design of new plastically deformable inorganic semiconductors can focus on compositions and structures that facilitate phase transformations, going beyond the conventional dislocation slip.

multidisciplinary sciences
Uncovering the phonon spectra and lattice dynamics of plastically deformable InSe van der Waals crystals

Jiangtao Wu,Yifei Lin,Mingfang Shu,Yifei Liu,Yupeng Ma,Gaoting Lin,Cuiping Zhang,Pengfei Jiao,Fengfeng Zhu,Yan Wu,Russell A Ewings,Helen C Walker,Guochu Deng,Songxue Chi,Shengwei Jiang,Matteo Baggioli,Min Jin,Haozhe Wang,Weiwei Xie,Tian-Ran Wei,Jiong Yang,Xun Shi,Jie Ma

DOI: https://doi.org/10.1038/s41467-024-50249-5

2024-07-24

Abstract:Stacking two-dimensional (2D) van der Waals (vdW) materials in a layered bulk structure provides an appealing platform for the emergence of exotic physical properties. As a vdW crystal with exceptional plasticity, InSe offers the opportunity to explore various effects arising from the coupling of its peculiar mechanical behaviors and other physical properties. Here, we employ neutron scattering techniques to investigate the correlations of plastic interlayer slip, lattice anharmonicity, and thermal transport in InSe crystals. Not only are the interlayer slip direction and magnitude well captured by shifts in the Bragg reflections, but we also observe a deviation from the expected Debye behaviour in the heat capacity and lattice thermal conductivity. Combining the experimental data with first-principles calculations, we tentatively attribute the observed evidence of strong phonon-phonon interactions to a combination of a large acoustic-optical frequency resonance and a nesting effect. These findings correlate the macroscopic plastic slip and the microscopic lattice dynamics, providing insights into the mechano-thermo coupling and modulation in 2D vdW materials.
Two-dimensional ferroelasticity in van der Waals β’-In2Se3

Chao Xu,Jianfeng Mao,Xuyun Guo,Shanru Yan,Yancong Chen,Tsz Wing Lo,Changsheng Chen,Dangyuan Lei,Xin Luo,Jianhua Hao,Changxi Zheng,Ye Zhu

DOI: https://doi.org/10.1038/s41467-021-23882-7

IF: 16.6

2021-06-16

Nature Communications

Abstract:Abstract Two-dimensional (2D) materials exhibit remarkable mechanical properties, enabling their applications as flexible and stretchable ultrathin devices. As the origin of several extraordinary mechanical behaviors, ferroelasticity has also been predicted theoretically in 2D materials, but so far lacks experimental validation and investigation. Here, we present the experimental demonstration of 2D ferroelasticity in both exfoliated and chemical-vapor-deposited β’ -In 2 Se 3 down to few-layer thickness. We identify quantitatively 2D spontaneous strain originating from in-plane antiferroelectric distortion, using both atomic-resolution electron microscopy and in situ X-ray diffraction. The symmetry-equivalent strain orientations give rise to three domain variants separated by 60° and 120° domain walls (DWs). Mechanical switching between these ferroelastic domains is achieved under ≤0.5% external strain, demonstrating the feasibility to tailor the antiferroelectric polar structure as well as DW patterns through mechanical stimuli. The detailed domain switching mechanism through both DW propagation and domain nucleation is unraveled, and the effects of 3D stacking on such 2D ferroelasticity are also discussed. The observed 2D ferroelasticity here should be widely available in 2D materials with anisotropic lattice distortion, including the 1T’ transition metal dichalcogenides with Peierls distortion and 2D ferroelectrics such as the SnTe family, rendering tantalizing potential to tune 2D functionalities through strain or DW engineering.

multidisciplinary sciences
Polymer-like Inorganic Double Helical van der Waals Semiconductor

Jiangbin Wu,Nan Wang,Ya-Ru Xie,Hefei Liu,Xinghao Huang,Xin Cong,Hung-Yu Chen,Jiahui Ma,Fanxin Liu,Hangbo Zhao,Jun Zhang,Ping-Heng Tan,Han Wang

DOI: https://doi.org/10.1021/acs.nanolett.2c03394

2022-11-23

Abstract:In high-performance flexible and stretchable electronic devices, conventional inorganic semiconductors made of rigid and brittle materials typically need to be configured into geometrically deformable formats and integrated with elastomeric substrates, which leads to challenges in scaling down device dimensions and complexities in device fabrication and integration. Here we report the extraordinary mechanical properties of the newly discovered inorganic double helical semiconductor tin indium phosphate. This spiral-shape double helical crystal shows the lowest Young's modulus (13.6 GPa) among all known stable inorganic materials. The large elastic (>27%) and plastic (>60%) bending strains are also observed and attributed to the easy slippage between neighboring double helices that are coupled through van der Waals interactions, leading to the high flexibility and deformability among known semiconducting materials. The results advance the fundamental understanding of the unique polymer-like mechanical properties and lay the foundation for their potential applications in flexible electronics and nanomechanics disciplines.
Sensitive Thermochromic Behavior of InSeI, a Highly Anisotropic and Tubular 1D van der Waals Crystal (Adv. Mater. 21/2024)

Dmitri Leo Mesoza Cordova,Yinong Zhou,Griffin M. Milligan,Leo Cheng,Tyler Kerr,Joseph Ziller,Ruqian Wu,Maxx Q. Arguilla

DOI: https://doi.org/10.1002/adma.202470162

IF: 29.4

2024-05-25

Advanced Materials

Abstract:Sensitive Thermochromic Behavior of InSeI In article number 2312597 by Maxx Q. Arguilla and co‐workers, a highly sensitive visible range thermochromic response is reported for the one‐dimensional van der Waals crystal, InSeI, which features exfoliable chains with a unique tetrahelical motif. The thermochromic sensitivity of these crystals is manifested through well‐resolved temperature‐dependent band edge absorption shifts and a (dEg/dT)max of 1.26 × 10−30 eV K−1, making it suitable for optical thermometry at the nanoscale.

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied,chemistry, physical, condensed matter
Elastic properties and intrinsic strength of two-dimensional InSe flakes

Yuhao Li,Chuanbin Yu,Yingye Gan,Yangyang Kong,Peng Jiang,Dai-Feng Zou,Penghui Li,Xue-Feng Yu,Rong Wu,Huijuan Zhao,Cun-Fa Gao,Jiangyu Li

DOI: https://doi.org/10.1088/1361-6528/ab1a96

IF: 3.5

2019-08-16

Nanotechnology

Abstract:The mechanical properties of two-dimensional (2D) materials are critical for their applications in functional devices as well as for strain engineering. Here, we report the Young's modulus and breaking strength of multilayered InSe, an emerging 2D semiconductor of the layered group III chalcogenide. Few-layer InSe flaks were exfoliated from bulk InSe crystal onto Si/SiO2 substrate with micro-fabricated holes, and indentation tests were carried out using an atomic force microscopy probe. In combination with both continuum analysis and finite element simulation, we measured the Young's modulus of multilayer 2D InSe (>5 L) to be 101.37 ± 17.93 GPa, much higher than its bulk counterpart, while its breaking strength is determined to be 8.68 GPa, approaching the theoretical limit of 10.1 GPa. Density functional theory calculations were also carried out to explain the insensitivity of Young's modulus to the layer count. It is found that 2D InSe is softer than most 2D materials, and exhibits breaking strength higher than that of carbon fiber, yet remaining more compliant, making it ideal for flexible electronics applications. The reliability of our method is also validated by measurement of graphene.
Sensitive thermochromic behavior of InSeI, a highly anisotropic and tubular 1D van der Waals Crystal

Maxx Arguilla,Dmitri Leo Cordova,Yinong Zhou,Griffin Milligan,Leo Cheng,Tyler Kerr,Joseph Ziller,Ruqian Wu

DOI: https://doi.org/10.26434/chemrxiv-2023-2kl8s

2023-12-15

Abstract:Thermochromism, the change in color of a material with temperature, is the fundamental basis of optical thermometry. A longstanding challenge in realizing sensitive optical thermometers for widespread use is identifying materials with pronounced thermometric optical performance in the visible range. To this end, we demonstrate that single crystals of indium selenium iodide (InSeI), a 1D van der Waals (vdW) solid consisting of weakly-bound helical chains, exhibit considerable visible range thermochromism. We show a strong temperature-dependent optical band edge absorption ranging from 450 to 530 nm (2.8 to 2.3 eV) over a 380 K temperature range with an experimental (dEg/dT)max value extracted to be 1.26 × 10-3 eV K-1. This value appreciably lies above most dense conventional semiconductors in the visible range and is comparable to soft lattice solids. We further sought to understand the origin of this unusually sensitive thermochromic behavior and found that it arises from strong electron-phonon interactions and anharmonic phonons that significantly broaden band edges and lower the Eg with increasing temperature. Our identification of structural signatures resulting to sensitive thermochromism in exfoliable 1D vdW crystals opens avenues in discovering low-dimensional solids with strong temperature-dependent optical response across broad spectral windows, dimensionalities, and nanoscale size regimes.

Chemistry
Two-dimensional covalent crystals by chemical conversion of thin van der Waals materials

Vishnu Sreepal,Mehmet Yagmurcukardes,Kalangi S. Vasu,Daniel J. Kelly,Sarah F. R. Taylor,Vasyl G. Kravets,Zakhar Kudrynskyi,Zakhar D. Kovalyuk,Amalia Patanè,Alexander N. Grigorenko,Sarah J. Haigh,Christopher Hardacre,Laurence Eaves,Hasan Sahin,Andre K. Geim,Francois M. Peeters,Rahul R. Nair

DOI: https://doi.org/10.48550/arXiv.1908.07357

2019-08-20

Materials Science

Abstract:Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have been focused mainly on the surface growth of molecules in high vacuum. Here, we report an approach to making 2D crystals of covalent solids by chemical conversion of van der Waals layers. As an example, we use 2D indium selenide (InSe) obtained by exfoliation and converted it by direct fluorination into indium fluoride (InF3), which has a non-layered, rhombohedral structure and therefore cannot be possibly obtained by exfoliation. The conversion of InSe into InF3 is found to be feasible for thicknesses down to three layers of InSe, and the obtained stable InF3 layers are doped with selenium. We study this new 2D material by optical, electron transport and Raman measurements and show that it is a semiconductor with a direct bandgap of 2.2 eV, exhibiting high optical transparency across the visible and infrared spectral ranges. We also demonstrate the scalability of our approach by chemical conversion of large-area, thin InSe laminates obtained by liquid exfoliation into InF3 films. The concept of chemical conversion of cleavable thin van der Waals crystals into covalently-bonded non-cleavable ones opens exciting prospects for synthesizing a wide variety of novel atomically thin covalent crystals.
Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS$_2$, WSe$_2$ and WTe$_2$

Alexey Falin,Matthew Holwill,Haifeng Lv,Wei Gan,Jun Cheng,Rui Zhang,Dong Qian,Matthew R. Barnett,Elton J.G. Santos,Konstantin S. Novoselov,Tao Tao,Xiaojun Wu,Lu Hua Li

DOI: https://doi.org/10.1021/acsnano.0c07430

2021-01-28

Abstract:Two-dimensional (2D) tungsten disulfide (WS$_2$), tungsten diselenide (WSe$_2$), and tungsten ditelluride (WTe$_2$) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1-3L) WS$_2$, WSe$_2$ and WTe$_2$ using a complementary suite of experiments and theoretical calculations. High-quality 1L WS$_2$ has the highest Young's modulus (302.4+-24.1 GPa) and strength (47.0+-8.6 GPa) of the entire family, overpassing those of 1L WSe$_2$ (258.6+-38.3 and 38.0+-6.0 GPa, respectively) and WTe$_2$ (149.1+-9.4 and 6.4+-3.3 GPa, respectively). However, the elasticity and strength of WS$_2$ decrease most dramatically with increased thickness among the three materials. We interpret the phenomenon by the different tendencies for interlayer sliding in equilibrium state and under in-plane strain and out-of-plane compression conditions in the indentation process, revealed by finite element method (FEM) and density functional theory (DFT) calculations including van der Waals (vdW) interactions. We also demonstrate that the mechanical properties of the high-quality 1-3L WS$_2$ and WSe$_2$ are largely stable in the air for up to 20 weeks. Intriguingly, the 1-3L WSe$_2$ shows increased modulus and strength values with aging in the air. This is ascribed to oxygen doping, which reinforces the structure. The present study will facilitate the design and use of 2D tungsten dichalcogenides in applications, such as strain engineering and flexible field-effect transistors (FETs).

Materials Science
Defect-free and crystallinity-preserving ductile deformation in semiconducting Ag2S

Masaaki Misawa,Hinata Hokyo,Shogo Fukushima,Kohei Shimamura,Akihide Koura,Fuyuki Shimojo,Rajiv K Kalia,Aiichiro Nakano,Priya Vashishta

DOI: https://doi.org/10.1038/s41598-022-24004-z

2022-11-14

Abstract:Typical ductile materials are metals, which deform by the motion of defects like dislocations in association with non-directional metallic bonds. Unfortunately, this textbook mechanism does not operate in most inorganic semiconductors at ambient temperature, thus severely limiting the development of much-needed flexible electronic devices. We found a shear-deformation mechanism in a recently discovered ductile semiconductor, monoclinic-silver sulfide (Ag2S), which is defect-free, omni-directional, and preserving perfect crystallinity. Our first-principles molecular dynamics simulations elucidate the ductile deformation mechanism in monoclinic-Ag2S under six types of shear systems. Planer mass movement of sulfur atoms plays an important role for the remarkable structural recovery of sulfur-sublattice. This in turn arises from a distinctively high symmetry of the anion-sublattice in Ag2S, which is not seen in other brittle silver chalcogenides. Such mechanistic and lattice-symmetric understanding provides a guideline for designing even higher-performance ductile inorganic semiconductors.
Atomistic structures and phase transition of In2Se3 nanowires studied by DFT calculations and synchrotron radiation X-ray diffraction

Xiaohui Yu,Tingjun Hou,Xuhui Sun,Youyong Li

DOI: https://doi.org/10.1016/j.ssc.2013.03.012

IF: 1.934

2013-01-01

Solid State Communications

Abstract:In2Se3 has potential application in photovoltaic cell, solid-state batteries, phase change memories, and in the manufacture of detectors of ionizing radiation. Here we study the crystal structures and phase transition of In2Se3 by using DFT calculations. Crystal structures of In2Se3 include layered structures and vacancy-ordered-in-screw-form structures. Combining with SR-XRD techniques, our studies show that thermal annealing will merge the layer structures of In2Se3 and improves conductivity of In2Se3. Our results provide structural information for different phases and phase transition mechanism of In2Se3.
Pressure-controlled Structural Symmetry Transition in Layered InSe

Huimin Su,Xuan Liu,Chengrong Wei,Junning Li,Zeyuan Sun,Qiye Liu,Xuefeng Zhou,Junhong Deng,Huan Yi,Qiaoyan Hao,Yusheng Zhao,Shanmin Wang,Li Huang,Shiwei Wu,Wenjing Zhang,Guixin Li,Jun-Feng Dai

DOI: https://doi.org/10.48550/arXiv.1903.04315

2019-03-11

Abstract:Structural symmetry of crystals plays important roles in physical properties of two-dimensional (2D) materials, particularly in the nonlinear optics regime. It has been a long-term exploration on the physical properties in 2D materials with various stacking structures, which correspond to different structural symmetries. Usually, the manipulation of rotational alignment between layers in 2D heterostructures has been realized at the synthetic stage through artificial stacking like assembling Lego bricks. However, the reconfigurable control of translational symmetry of crystalline structure is still challenging. High pressure, as a powerful external control knob, provides a very promising route to circumvent this constraint. Here, we experimentally demonstrate a pressure-controlled symmetry transition in layered InSe. The continuous and reversible evolution of structural symmetries can be in-situ monitored by using the polarization-resolved second harmonic generation (SHG) spectroscopy. As pressure changes, the reconfigurable symmetry transition of the SHG pattern from three-fold rotational symmetry to mirror symmetry was experimentally observed in a layered InSe samples and was successfully explained by the proposed interlayer-translation model. This opens new routes towards potential applications of manipulating crystal symmetry of 2D materials.

Optics,Materials Science
Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy

Natalie Briggs,Brian Bersch,Yuanxi Wang,Jue Jiang,Roland J. Koch,Nadire Nayir,Ke Wang,Marek Kolmer,Wonhee Ko,Ana De La Fuente Duran,Shruti Subramanian,Chengye Dong,Jeffrey Shallenberger,Mingming Fu,Qiang Zou,Ya-Wen Chuang,Zheng Gai,An-Ping Li,Aaron Bostwick,Chris Jozwiak,Cui-Zu Chang,Eli Rotenberg,Jun Zhu,Adri C. T. van Duin,Vincent Crespi,Joshua A. Robinson

DOI: https://doi.org/10.1038/s41563-020-0631-x

IF: 41.2

2020-01-01

Nature Materials

Abstract:Atomically thin two-dimensional (2D) metals may be key ingredients in next-generation quantum and optoelectronic devices. However, 2D metals must be stabilized against environmental degradation and integrated into heterostructure devices at the wafer scale. The high-energy interface between silicon carbide and epitaxial graphene provides an intriguing framework for stabilizing a diverse range of 2D metals. Here we demonstrate large-area, environmentally stable, single-crystal 2D gallium, indium and tin that are stabilized at the interface of epitaxial graphene and silicon carbide. The 2D metals are covalently bonded to SiC below but present a non-bonded interface to the graphene overlayer; that is, they are ‘half van der Waals’ metals with strong internal gradients in bonding character. These non-centrosymmetric 2D metals offer compelling opportunities for superconducting devices, topological phenomena and advanced optoelectronic properties. For example, the reported 2D Ga is a superconductor that combines six strongly coupled Ga-derived electron pockets with a large nearly free-electron Fermi surface that closely approaches the Dirac points of the graphene overlayer.
Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS 2 , WSe 2 , and WTe 2

Alexey Falin,Matthew Holwill,Haifeng Lv,Wei Gan,Jun Cheng,Rui Zhang,Dong Qian,Matthew R. Barnett,Elton J. G. Santos,Konstantin S. Novoselov,Tao Tao,Xiaojun Wu,Lu Hua Li

DOI: https://doi.org/10.1021/acsnano.0c07430

IF: 17.1

2021-01-27

ACS Nano

Abstract:Two-dimensional (2D) tungsten disulfide (WS2), tungsten diselenide (WSe2), and tungsten ditelluride (WTe2) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1–3L) WS2, WSe2, and WTe2 using a complementary suite of experiments and theoretical calculations. High-quality 1L WS2 has the highest Young's modulus (302.4 ± 24.1 GPa) and strength (47.0 ± 8.6 GPa) of the entire family, overpassing those of 1L WSe2 (258.6 ± 38.3 and 38.0 ± 6.0 GPa, respectively) and WTe2 (149.1 ± 9.4 and 6.4 ± 3.3 GPa, respectively). However, the elasticity and strength of WS2 decrease most dramatically with increased thickness among the three materials. We interpret the phenomenon by the different tendencies for interlayer sliding in an equilibrium state and under in-plane strain and out-of-plane compression conditions in the indentation process, revealed by the finite element method and density functional theory calculations including van der Waals interactions. We also demonstrate that the mechanical properties of the high-quality 1–3L WS2 and WSe2 are largely stable in air for up to 20 weeks. Intriguingly, the 1–3L WSe2 shows increased modulus and strength values with aging in the air. This is ascribed to oxygen doping, which reinforces the structure. The present study will facilitate the design and use of 2D tungsten dichalcogenides in applications such as strain engineering and flexible field-effect transistors.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c07430?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c07430</a>.The t-test statistics; DFT calculations on the most stable phase of WTe2, elastic constants and sliding energies of 2H-WTe2, interaction between diamond tip and WS2 (WSe2), and air-aged WS2 and WSe2 and their stable phases; optical microscopy images of the aged WS2 and WSe2 (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c07430/suppl_file/nn0c07430_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology

Ductile van der Waals materials

Orientation-dependent Large Plasticity of Single-Crystalline Gallium Selenide

Structural Phase Transition of Multilayer VSe2.

Designing Inorganic Semiconductors with Cold‐Rolling Processability

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe

Van der Waals semiconductor InSe plastifies by phase transformation

Van der Waals semiconductor InSe plastifies by martensitic transformation

Uncovering the phonon spectra and lattice dynamics of plastically deformable InSe van der Waals crystals

Two-dimensional ferroelasticity in van der Waals β’-In2Se3

Polymer-like Inorganic Double Helical van der Waals Semiconductor

Sensitive Thermochromic Behavior of InSeI, a Highly Anisotropic and Tubular 1D van der Waals Crystal (Adv. Mater. 21/2024)

Elastic properties and intrinsic strength of two-dimensional InSe flakes

Sensitive thermochromic behavior of InSeI, a highly anisotropic and tubular 1D van der Waals Crystal

Two-dimensional covalent crystals by chemical conversion of thin van der Waals materials

Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS$_2$, WSe$_2$ and WTe$_2$

Defect-free and crystallinity-preserving ductile deformation in semiconducting Ag2S

Atomistic structures and phase transition of In2Se3 nanowires studied by DFT calculations and synchrotron radiation X-ray diffraction

Pressure-controlled Structural Symmetry Transition in Layered InSe

Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy

Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS 2 , WSe 2 , and WTe 2