Abstract:The engineering of broadband absorbers to harvest white light in thin-film semiconductors is a major challenge in developing renewable materials for energy harvesting. Many solution-processed materials with high manufacturability and low cost, such as semiconductor quantum dots, require the use of film structures with thicknesses on the order of 1 μm to absorb incoming photons completely. The electron transport lengths in these media, however, are 1 order of magnitude smaller than this length, hampering further progress with this platform. Herein, we show that, by engineering suitably disordered nanoplasmonic structures, we have created a new class of dispersionless epsilon-near-zero composite materials that efficiently harness white light. Our nanostructures localize light in the dielectric region outside the epsilon-near-zero material with characteristic lengths of 10-100 nm, resulting in an efficient system for harvesting broadband light when a thin absorptive film is deposited on top of the structure. By using a combination of theory and experiments, we demonstrate that ultrathin layers down to 50 nm of colloidal quantum dots deposited atop the epsilon-near-zero material show an increase in broadband absorption ranging from 200% to 500% compared to a planar structure of the same colloidal quantum-dot-absorber average thickness. When the epsilon-near-zero nanostructures were used in an energy-harvesting module, we observed a spectrally averaged 170% broadband increase in the external quantum efficiency of the device, measured at wavelengths between 400 and 1200 nm. Atomic force microscopy and photoluminescence excitation measurements demonstrate that the properties of these epsilon-near-zero structures apply to general metals and could be used to enhance the near-field absorption of semiconductor structures more widely. We have developed an inexpensive electrochemical deposition process that enables scaled-up production of this nanomaterial for large-scale energy-harvesting applications.

Epsilon-near-zero thin-film metamaterials for wideband near-perfect light absorption

Integrating Two Epsilon-Near-zero Materials into Planar Multilayer Metamaterial Structure for Broadband Near-Perfect Mid-IR Absorption

Omnidirectional, Thin Metasurface Exhibiting Selective Absorption for Un-Polarized Broadband Incidence

Compact Multilayer Film Structures for Ultrabroadband, Omnidirectional, and Efficient Absorption

Perfect Absorption in Ultrathin Epsilon-Near-Zero Metamaterials Induced by Fast-Wave Non-Radiative Modes

Polarization-Independent, tunable, broadband perfect absorber based on semi-sphere patterned Epsilon-Near-Zero films

Epsilon-Near-Zero Substrate Engineering for Ultrathin-Film Perfect Absorbers

Berreman type perfect absorber based on epsilon near zero material gallium doped zinc oxide

Perfect Absorber Based on Epsilon-Near-Zero Metamaterial as a Refractive Index Sensor

Perfect Absorption in Ultrathin Anisotropic Ε-Near-zero Metamaterials

Broadband Epsilon-near-Zero Reflectors Enhance the Quantum Efficiency of Thin Solar Cells at Visible and Infrared Wavelengths

Metamaterials-based broadband absorption in long-wave infrared frequency enabled by multilayered ENZ films on metal-coated patterned silicon

Optical properties of metal-dielectric based epsilon near zero metamaterials

Ultrawideband Dispersion Control of a Metamaterial Surface for Perfectly-Matched-layer-like Absorption.

Ultrathin wide-angle optical metamaterial absorber

Wide-band Solar Light Perfect Absorbers Using Metal-Dielectric Layer Structures

Ultra Narrow Dual-Band Perfect Absorber Based on a Dielectric−Dielectric−Metal Three-Layer Film Material

Ultrathin and Electrically Tunable Metamaterial with Nearly Perfect Absorption in Mid-Infrared

Chalcogenide-based, all-dielectric, ultrathin metamaterials with perfect, incidence-angle sensitive, mid-infrared absorption: inverse design, analysis, and applications

Wideband Visible-Light Absorption in an Ultrathin Silicon Nanostructure

A Perfect Metamaterial Absorber