Abstract:Searching for power‐independent, compact, and highly environment‐sensitive photodetectors is a critical step towards the realization of next‐generation energy‐efficient and sustainable integrated optoelectronic systems. Particularly, the deep ultraviolet (UV) band, which has large photon energy, is extremely suitable for environment monitoring and invisible light communication application. Herein, the demonstration of self‐powered deep UV solar‐blind photodetectors in a photoelectrochemical (PEC) cell configuration is reported, adopting wide bandgap n‐type aluminum gallium nitride (AlGaN) nanowires as photoelectrode. After decorating nanowires with noble metal ruthenium (Ru), the constructed solar‐blind PEC photodetectors exhibited excellent responsivity of 48.8 mA W‐1, fast response speed (rise time of 83 ms and decay time of 19 ms) with large photocurrent density of 55 μA cm‐2 at 254 nm illumination. Such superior performance can be attributed to, firstly and foremost, the successful synthesis of highly uniform and defect‐free n‐type AlGaN nanowires which ensures efficient photogeneration via effective light‐harvesting, and secondly, the boosted carrier separation and collection efficiency through Ru decoration. This novel nanoarchitecture enables deep UV photodetection to work stably with low energy consumption, intriguingly, opening the possibility for the development of high‐performance PEC photodetectors based on group III‐nitride semiconductors covering the entire spectral range from infrared to deep UV.

Characterization of a self-organized deep-ultraviolet micro-light-emitting diode structure for high-speed solar-blind optical wireless communications

Self-organized micro-light-emitting diode structure for high-speed solar-blind optical wireless communications

Chip Based THz Emitter for Ultra-high Speed THz Wireless Communication

Accelerated Solar-Blind Optical Communication Via Efficient Deep Ultraviolet LEDs Incorporated with Novel Micro-Trenched Surface

Electro-optical Characteristics for AlGaN Solar-Blind P-I-n Photodiode: Experiment and Simulation

Deep-Ultraviolet LEDs Incorporated with SiO<sub>2</sub>-Based Microcavities Toward High-Speed Ultraviolet Light Communication

AlGaN-Based Deep UV Communication LED With Superlattice Electron-Blocking Layer at 274 nm

Multifunctional Ultraviolet-C Micro-LED With Monolithically Integrated Photodetector for Optical Wireless Communication

Size-Dependent UV-C Communication Performance of AlGaN Micro-LEDs and LEDs

High-Speed Micro-LEDs Based on Nano-Engineered InGaN Active Region Towards Chip-to-Chip Interconnections

275 nm Deep Ultraviolet AlGaN-Based Micro-LED Arrays for Ultraviolet Communication

Multi-Gb/s visible light communication based on AlGaInP amber micro-LED

Iii-Nitride Deep Ultraviolet Micro- and Nano-Photonics

Electrically-driven GHz Range Ultrafast Graphene Light Emitter (conference Presentation)

High-brightness green CdSe/ZnS quantum dots stimulated by solar-blind deep-ultraviolet light in optical wireless communications

Miniaturized AlGaN‐Based Deep‐Ultraviolet Light‐Emitting and Detecting Diode with Superior Light‐Responsive Characteristics

150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

N-AlGaN Free Deep-Ultraviolet Light-Emitting Diode with Transverse Electron Injection

Highly Uniform, Self‐Assembled AlGaN Nanowires for Self‐Powered Solar‐Blind Photodetector with Fast‐Response Speed and High Responsivity

Ultrafast Self-Powered Solar-Blind Ultraviolet Photodetector Based on Ga2O3 Microwire/GaN p-n Heterojunction Using a Single-Layer Graphene as Electrode

760 Mbps ultraviolet wireless communication based on a transmitter with AlGaN/InGaN MQWs