Abstract:Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states, indicating the possibility of both p- (early TMs) and n- (mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggests that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.

Effects of chlorine atoms doping on the electronic structure of monolayer molybdenum disulfide

Hole Doping In Epitaxial Mose2 Monolayer By Nitrogen Plasma Treatment

Electronic and optical properties of Cr / Cl co-doped in single-layer MoS 2 : A first principles study

Recent Advances in the Chemical Doping of Two-Dimensional Molybdenum Disulfide

Intrinsically Substitutional Carbon Doping in CVD-Grown Monolayer MoS2 and the Band Structure Modulation

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Layer-dependent Chemically Induced Phase Transition of Two-dimensional MoS2.

A First-Principles Study of Impurity Effects on Monolayer MoS2: Bandgap Dominated by Donor Impurities

Chlorine doping of MoSe2 flakes by ion implantation

Stability, efficiency, and mechanism of n-type doping by hydrogen adatoms in two-dimensional transition metal dichalcogenides

Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb‐Doping

First Principles Study on Molecule Doping in MoS2 Monolayer

In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.

Novel doping alternatives for single-layer transition metal dichalcogenides

Modulating Carrier Density and Transport Properties of Mos2 by Organic Molecular Doping and Defect Engineering

Electronic and Optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect doping

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.

Wafer-Scale Oxygen-Doped MoS2 Monolayer.

Electron-doping-enhanced Trion Formation in Monolayer Molybdenum Disulfide Functionalized with Cesium Carbonate.

Heteroatom doping of two-dimensional materials: From graphene to chalcogenides