Analytical modeling to estimate the sensitivity of MEMS technology-based piezoresistive pressure sensor

Vinod Belwanshi

DOI: https://doi.org/10.1007/s10825-020-01592-5

IF: 1.9828

2020-10-29

Journal of Computational Electronics

Abstract:Design and modeling of microelectromechanical system (MEMS)-based piezoresistive pressure sensor are main requirements to fabricate application-oriented pressure sensor devices for the industry, i.e., nuclear power plants, aerospace and avionics, oil and gas, Internet of Things, wearable electronics and consumer electronics. In this research work, analytical modeling is presented to estimate the overall sensitivity of the MEMS technology-based piezoresistive pressure sensor. The sensitivity of a piezoresistive pressure sensor is estimated using the thin plate theory and the theory of piezoresistivity in silicon. The mechanical responses of a thin plate in terms of deflection and induced stresses are presented and discussed. The effects of geometrical parameters on deflection and induced stresses are analyzed using a ratio of half-edge length with the thickness ((a/h)) and a ratio of diaphragm edges ((a/b)). These ratio parameters are responsible for the sensitivity of the piezoresistive pressure sensor. Moreover, a comparative assessment is presented for the current model with a model available in the literature. Further, calculations of average stresses are carried out for the piezoresistor geometry of a small rectangular area. Thereafter, a quantitative variation in the calculated sensitivity is presented based on calculation with maximum stress and average stress. The calculated difference in overall sensitivity is found to be 3%. However, a significant reduction in average stresses as compared to maximum induced stresses is obtained as 28% and 36% change for stress X and stress Y, respectively.

engineering, electrical & electronic,physics, applied