Design and numerical analysis of CIGS-based solar cell with V2O5 as the BSF layer to enhance photovoltaic performance
Nayeem Mahmud,Intekhab Alam,M. M. A. Moon,Abdul Kuddus,G. F. Ishraque Toki,M. H. K. Rubel,M. Khalid Hossain,Md. Ferdous Rahman,Md. Hasan Ali,Md. Abdullah Al Asad
DOI: https://doi.org/10.1063/5.0138354
IF: 1.697
2023-04-08
AIP Advances
Abstract:Copper indium gallium selenide (CIGS)-based solar cells have exhibited greater performance than the ones utilizing cadmium telluride (CdTe) or hydrogenated amorphous silicon (a-Si: H) as the absorber. CIGS-based devices are more efficient, considering their device performance, environmentally benign nature, and reduced cost. In this article, we proposed a potential CIGS-absorber-based solar cell with an FTO/ZnSe/CIGS/V 2 O 5 /Cu heterostructure, with a V 2 O 5 back-surface field (BSF) layer, SnO 2 :F (FTO) window layer, and ZnSe buffer layer. Using the solar cell capacitance simulator one-dimensional simulation software, the effects of the presence of the BSF layer, the thickness, bulk defect density, and acceptor density of the absorber layer, buffer layer thickness, interfacial defect density, device resistance, and operating temperature on the open-circuit voltage, short-circuit current, fill factor, and efficiency, as well as on the quantum efficiency and recombination and generation rate, of the device have been explored in detail. The simulation results revealed that only a 1 μ m-thick-CIGS absorber layer with V 2 O 5 BSF and ZnSe buffer layers in this structure offers an outstanding efficiency of 31.86% with a V OC of ∼0.9 V. Thus, these outcomes of the CIGS-based proposed heterostructure provide an insightful pathway for fabricating high-efficiency solar cells with performance more promising than the previously reported conventional designs.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology