Abstract:The discovery of graphene has ignited intensive interest in two-dimensional layered materials (2DLMs). These 2DLMs represent a new class of nearly ideal 2D material systems for exploring fundamental chemistry and physics at the limit of single-atom thickness, and have the potential to open up totally new technological opportunities beyond the reach of existing materials. In general, there are a wide range of 2DLMs in which the atomic layers are weakly bonded together by van der Waals interactions and can be isolated into single or few-layer nanosheets. The van der Waals interactions between neighboring atomic layers could allow much more flexible integration of distinct materials to nearly arbitrarily combine and control different properties at the atomic scale. The transition metal dichalcogenides (TMDs) (e.g., MoS2, WSe2) represent a large family of layered materials, many of which exhibit tunable band gaps that can undergo a transition from an indirect band gap in bulk crystals to a direct band gap in monolayer nanosheets. These 2D-TMDs have thus emerged as an exciting class of atomically thin semiconductors for a new generation of electronic and optoelectronic devices. Recent studies have shown exciting potential of these atomically thin semiconductors, including the demonstration of atomically thin transistors, a new design of vertical transistors, as well as new types of optoelectronic devices such as tunable photovoltaic devices and light emitting devices. In parallel, there have also been considerable efforts in developing diverse synthetic approaches for the rational growth of various forms of 2D materials with precisely controlled chemical composition, physical dimension, and heterostructure interface. Here we review the recent efforts, progress, opportunities and challenges in exploring the layered TMDs as a new class of atomically thin semiconductors.

Layered Semiconducting 2D Materials for Future Transistor Applications

Two dimensional semiconducting materials for ultimately scaled transistors

2D materials readiness for the transistor performance breakthrough

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit

Transistors based on two-dimensional materials for future integrated circuits

Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

2D Semiconductors for Specific Electronic Applications: from Device to System

Promises and prospects of two-dimensional transistors

Process integration and future outlook of 2D transistors

Two-Dimensional SiS Layers with Promising Electronic and Optoelectronic Properties: Theoretical Prediction

Monolayer black phosphorus and germanium arsenide transistors via van der Waals channel thinning

Controllable Doping in 2D Layered Materials

Strain-Free Layered Semiconductors for 2D Transistors with On-State Current Density Exceeding 1.3 mA μm –1

Transistor Engineering Based on 2D Materials in the Post-Silicon Era

The Roadmap of 2D Materials and Devices Toward Chips

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Research progress on the application of two-dimensional layered semiconductors in optoelectronic devices

Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges