Abstract:This study presents VO2‐based photothermoelectric near‐infrared photodetectors showing electrode‐dependent and tunable super‐linear photoresponse with ultralow modulation bias. The device demonstrates an exceptional photocurrent on/off ratio and high detectivity. The electrode dependence, driven by the polarity difference in the Seebeck coefficient, is also elucidated. It is ideal for intensity‐selective near‐sensor processing and night vision pattern reorganization even with noisy inputs, making it a low‐power and integrative technology for future smart edge sensors. Brain‐like intelligence is ushering humanity into an era of the Internet of Perceptions (IoP), where the vast amounts of data generated by numerous sensing nodes pose significant challenges to transmission bandwidth and computing hardware. A recently proposed near‐sensor computing architecture offers an effective solution to reduce data processing delays and energy consumption. However, a pressing need remains for innovative hardware with multifunctional near‐sensor image processing capabilities. In this work, Mott material (vanadium dioxide)‐based photothermoelectric near‐infrared photodetectors are developed that exhibit electrode‐dependent and tunable super‐linear photoresponse (exponent α > 33) with ultralow modulation bias. These devices demonstrate an opto‐thermo‐electro‐coupled phase transition, resulting in a large photocurrent on/off ratio (>105), high responsivity (≈500 A W−1), and well detectivity (≈3.9 × 1012 Jones), all while maintaining rapid response speeds (τr = 2 μs and τd = 5 μs) under the bias of 1 V. This electrode‐dependent super‐linear response is found to arise from the electron doping effect determined by the polarity of the Seebeck coefficient. Furthermore, the work showcases intensity‐selective near‐sensor processing and night vision pattern reorganization, even with noisy inputs. This work paves the way for developing near‐sensor devices with potential applications in medical image preprocessing, flexible electronics, and intelligent edge sensing.

Light‐Regulated Mott Transition for On‐Demand Multilevel Memory Storage, Processing, and Energy Efficient Machine Vision

Electrode‐Dependent and Tunable Sub‐to‐Super‐Linear Responsivity in Mott Material‐Enabled Near‐Infrared Photodetectors for Advanced Near‐Sensor Image Processing

High-bandwidth Light Inputting Multilevel Photoelectric Memory Based on Thin-Film Transistor with a Floating Gate of CsPbBr3/CsPbI3 Blend Quantum Dots

Multilevel nonvolatile photomemory with long-term robust optical retention based on photoinduced depolarization

Multi‐Wavelength Optoelectronic Synaptic Transistors Based on Transition Metal Telluride‐Sulfide Heterostructures

A High‐Performance In‐Memory Photodetector Realized by Charge Storage in a van der Waals MISFET

Negative Photo Conductivity Triggered with Visible Light in Wide Bandgap Oxide-Based Optoelectronic Crossbar Memristive Array for Photograph Sensing and Neuromorphic Computing Applications

Artificial visual perception neural system using a solution-processable MoS2-based in-memory light sensor

Multi‐level Nonvolatile Transistor Memory With Optical Rewritability Utilizing Reverse‐Bias P‐N Junction of Oriented Rod‐Like Organic Molecules

An Atomically Thin Optoelectronic Machine Vision Processor

Multilevel Conductance Switching of Memory Device Through Photoelectric Effect.

Photoinduced Multi-Bit Nonvolatile Memory Based on a Van Der Waals Heterostructure with a 2D-Perovskite Floating Gate.

Photoelectric Logic and in Situ Memory Transistors with Stepped Floating Gates of Perovskite Quantum Dots

Reconfigurable Optical Memory Based on MoS2/QDs Mixed-Dimensional Van Der Waals Heterostructure

Multibit Programmable Optoelectronic Nanowire Memory with Sub‐femtojoule Optical Writing Energy

Coupled Ferroelectric‐Photonic Memory in a Retinomorphic Hardware for In‐Sensor Computing

Optoelectronic memory in 2D MoS2 field effect transistor

Seven Bit Nonvolatile Electrically Programmable Photonics Based on Phase-Change Materials for Image Recognition

Fast, multi‐bit and Vis‐Infrared Broadband Nonvolatile Optoelectronic Memory with MoS2/2D‐perovskite van der Waals Heterojunction

Reconfigurable optical memory based on MoS 2 /QDs mixed-dimensional van der Waals heterostructure

Non-volatile optoelectronic memory based on a photosensitive dielectric