The effect of molybdenum-doped tin selenide semiconductor material (SnSe) synthesized via electrochemical deposition technique for photovoltaic application

Imosobomeh L. Ikhioya,Osolobri Blessing Uyoyou,Anho Lawrence Oghenerivwe

DOI: https://doi.org/10.1007/s10854-022-08025-y

2022-03-31

Abstract:The research aimed at the effect of molybdenum-doped tin selenide semiconductor material (SnSe) synthesized via electrochemical deposition technique for photovoltaic application. The cationic, anionic, and dopant concentrations used were, respectively, 0.1 mol of tin(II) chloride dehydrate (SnCl2·2H2O), 0.1 mol of selenium(IV) oxide (SeO2), and 0.1 mol of molybdenum dioxide (MoO2). It was noticed that thick precipitate-like crystallite particles composed of various sizes were observed for SnSe which consists of unevenly shaped and firmly packed particles, while for SnSe/Mo, the crystallite size is like cracks of melted foam far larger than that of SnSe. The presence of SnSe and SnSe/Mo was noticed in the EDX analysis and the structural analysis of SnSe and tin selenide-doped molybdenum (SnSe/Mo) materials were analyzed using (XRD) and the crystal planes of (101), (111), (200), and (211) were observed for SnSe and tin selenide-doped molybdenum (SnSe/Mo) deposited at 0.1 mol%, 0.2 mol%, and 0.3 mol% concentrations The deposited SnSe and tin selenide-doped molybdenum (SnSe/Mo) are polycrystalline and their corresponding peaks fit well to a hexagonal SnSe wurtzite-type structure with a prominent preferred orientation along (101) plane. The energy bandgap for the deposited material was found to range from 1.50 to 2.22 eV and the materials deposited at the molar concentration (0.1, 0.2, and 0.3 mol%) exhibited an increase in thickness from 115.12 to 121.17 nm with the downturn in the resistivity of the synthesized films from 6.011 ×$$\times$$ 103 to 5.400 ×$$\times$$ 103 Ω cm, thereby resulting in increased conductivity of the deposited material from 1.663 ×$$\times$$ 1011 to 1.851 ×$$\times$$ 1011 S/m.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied