Enhanced physical properties of nickel telluride metal chalcogenide material with molybdenum dopant
I mosobomeh L. Ikhioya,Nwamaka I. Akpu,Edwin U. Onoh,Samson O. Aisida,Ishaq Ahmad,M. Maaza,Fabian I. Ezema
DOI: https://doi.org/10.1080/14328917.2023.2222465
2023-06-09
Materials Research Innovations
Abstract:In the study, nickel telluride and molybdenum dopants were synthesised using an electrochemical deposition approach. The nanoparticle of the material shows the reaction between the transition metal and chalcogenide material, and the nickel telluride pristine demonstrates that the film surface provides a clean image of melted wax with splattered evidence of oil on the film. The film that was deposited at 0.1 mol% clearly shows how the dopant changed the melted wax to nanoparticles, demonstrating the compatibility of the two materials. The structural patterns showed diffraction peaks at the (111), (200), (210), (211), (300), and (311) diffraction planes, which are equivalent to 13.22 °, 16.95 °, 18.85 °, 25.93 °, 30.84 °, and 32.98 ° for nickel telluride and 13.38 °, 16.93 °, 19.02 °, 25.95 °, 30.85, and 33.02 ° for molybdenum-doped nickel telluride. Both nickel telluride and molybdenum-doped nickel telluride materials produced similar peaks. When the dopant was added, the thickness of the molybdenum-doped nickel telluride films grew from 132.02 to 147.57 nm. The UV area of the spectra was found to have the maximum absorbance and reflectance, however, the transmittance increased as the wavelength of the incident radiation increased. The absorbance, transmittance, and reflectance of nickel telluride and molybdenum-doped nickel telluride thin film material are improved by the addition of molybdenum as a dopant. The energy bandgap of the synthesised films; the nickel telluride has 1.18 eV, while the doped nickel telluride has an energy bandgap of 1.50–1.55 eV which shows that the energy bandgap narrows as molybdenum-dopant concentration rises.