Abstract:The influence of gate direct tunneling current on ultrathin gate oxide MOS ($1.1~\hbox{nm}\leq t_{\rm ox}\leq 1.5~\hbox{nm}$, $L_{\rm g}=50\hbox{--} 70~\hbox{nm}$) circuits has been studied based on detailed simulations. For the gate oxide thickness down to 1.1 nm, gate direct tunneling currents, including the edge direct tunneling (EDT), show only a minor impact on low $V_{\rm dd}$ static-logic circuits. However, dynamic logic and analog circuits are more significantly influenced by the off-state leakage current for oxide thickness below 1.5 nm, under low-voltage operation. Based on the study, the oxide thicknesses which ensure the International Technological Roadmap for Semiconductors (ITRS) gate leakage limit are outlined both for high-performance and low-power devices.

What problem does this paper attempt to address?

This paper attempts to solve the problem of the influence of gate direct tunneling current on the circuit performance in MOS circuits with ultra - thin gate oxide layers. Specifically, as the CMOS technology nodes keep shrinking, the thickness of the gate oxide layer also gradually decreases, resulting in a significant increase in the gate direct tunneling current. This will have an adverse impact on the performance of static and dynamic logic circuits as well as analog circuits, especially under low - voltage operating conditions. ### Main problems of the paper 1. **Influence of gate direct tunneling current**: - For MOS devices with ultra - thin oxide layers whose gate oxide layer thickness is 1.1 nm or less (including edge direct tunneling current EDT), the influence of gate direct tunneling current on circuit performance has been studied in detail. - It has been found that in low - static logic circuits, the influence of gate direct tunneling current is relatively small; but in dynamic logic and analog circuits, especially when the oxide layer thickness is below 1.5 nm, the off - state leakage current has a significant impact on circuit performance. 2. **Circuit performance evaluation**: - Through detailed simulation studies, the influence of gate oxide layers with different thicknesses on circuit performance has been evaluated, including typical circuits such as static CMOS inverters, dynamic AND gates and sample - and - hold (S/H) circuits. - The results show that the gate direct tunneling current will cause logic errors in the pre - charge and evaluation stages of dynamic logic circuits, and the analog circuits such as S/H circuits will have signal attenuation during the holding period, thus affecting the robustness and reliability of the circuits. 3. **Requirements of the technology roadmap**: - According to the International Technology Roadmap for Semiconductors (ITRS), in order to meet the requirements of high - performance and low - power - consumption devices, it is necessary to determine an appropriate gate oxide layer thickness to ensure that the gate leakage current is within an acceptable range. - The research points out that for low - power - consumption devices, the existing oxide layer thickness recommendations may be too aggressive, especially in technologies at 45 nm nodes and below, and it is necessary to consider using high - dielectric - constant materials or more conservative oxide layer thicknesses. ### Formula presentation - **Calculation formula of gate direct tunneling current**: \[ I_{\text{tunnel}}=\int_{E_c}^{E_f}T(E)f(E)dE \] where $ T(E) $ is the tunneling coefficient, $ f(E) $ is the Fermi - Dirac distribution function, and $ E_c $ and $ E_f $ are the bottom of the conduction band and the Fermi level respectively. - **Voltage division formula**: \[ V_{\text{out}} = V_{\text{dd}}\cdot\frac{R_{\text{gate - to - drain}}}{R_{\text{on - state}}+R_{\text{gate - to - drain}}} \] where $ V_{\text{out}} $ is the output voltage, $ V_{\text{dd}} $ is the power supply voltage, $ R_{\text{gate - to - drain}} $ is the resistance from the gate to the drain, and $ R_{\text{on - state}} $ is the on - state resistance of the channel. ### Conclusion Through detailed simulation studies of gate direct tunneling current, the paper reveals its influence on the performance of different types of CMOS circuits and proposes suggestions for the future design of gate oxide layer thickness to ensure the stability and reliability of the circuits, especially in low - power - consumption and high - performance applications.

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