Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Large core (/spl sim/60 /spl mu/m) SOI multimode waveguides for optical interconnect

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Design and Fabrication of Multimode Interference Coupler with Strong Confinement Structure on Silicon-On-Insulator

Long-wave infrared 1 × 2 MMI based on air-gap beneath silicon rib waveguides.

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Study of Silicon-on-glass Waveguides

Si Photonic Wire Waveguide Devices

Manufacturing of double-layered multimode optical waveguides in glass substrate

Fabrication of silicon-on-glass waveguides

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Compact Silicon-Based Wavelength-Selective Photonic Integrated Devices and the Applications

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Low-cost and high-efficiency single-mode-fiber interfaces to silicon photonic circuits

Directly Inscribed Multimode Polymer Waveguide and 3D Device for High-Speed and High-Density Optical Interconnects

Mid-infrared Suspended Membrane Waveguide and Ring Resonator on Silicon-on-Insulator

Fabrication of SOI directional coupler

60-Nm-thick Basic Photonic Components and Bragg Gratings on the Silicon-on-insulator Platform.

New silicon photonics integration platform enabled by novel micron-scale bends