The electrical properties of copper phthalocyanine thin films using indium electrodes

A K Hassan,R D Gould

DOI: https://doi.org/10.1088/0022-3727/22/8/022

1989-08-14

Abstract:A systematic study has been made of DC electrical conduction processes through evaporated copper phthalocyanine thin films with indium electrodes. Samples showed asymmetric conductivity, which was attributed to tunnelling effects at the interface with the injecting electrode under forward bias and to trap-dominated space-charge-limited conduction under reverse bias. For tunnelling the barrier height was estimated to be approximately 0.3 eV, while the traps were exponentially distributed in energy and of concentration approximately 1024 m-3. The temperature parameter characterising the exponential trap distribution was sensitive to the deposition conditions and the sample structure, yielding typical values of 1421 K for simple sandwich structures and 781 K for samples with edge-thickening silicon oxide layers. The difference between the two values was attributed to the evolution of oxygen during deposition of the additional layer. Four-layer samples, which included an additional silicon oxide layer between the electrodes, showed considerably reduced conductivity which was attributed to Poole-Frankel emission with a field-lowering coefficient of value 1.95*10-5 eV m1/2 V-1/2.