Abstract:Recently, a monolithic integration of optics and electronics in a single Si chip has attracted a great deal of attention due to its attractive application prospects: the potential for forming high speeded information processing and transmission, and inexpensive and low power silicon chip. Developing high-efficiency silicon-based light sources is the main task in silicon photonics. In the present paper the authors explore a potential way for silicon-based light-emitting application. A Mn(2+)-activated silicon-rich silicon oxide (SiO2 : Si : Mn2+) film was prepared on the n(+)-type silicon substrate using co-sputtering technique followed by doping and activation of Mn with a thermal diffusion method. High-resolution transmission electronic microscope study shows that the film is embedded with 3-5 nm silicon nanocrystals. Bright green photoluminescence (PL) from the film was observed under ultraviolet radiation and peaked at 524 nm (2.36 eV), the decay time of which is 0.8 ms. It is generally believed that the green radiation originates from 4T1 --> 6A1 transition in Mn2+. The PL excitation spectrum of the film, monitored at 524 nm, has a peak of 254 nm, similar to that of the Zn2 SiO4 : Mn film. It is believed that the strong 254 nm absorption is attributed to Mn2+ --> Mn3+ ionization or ds --> d4s transition. A very broad electroluminescence spectrum ranging from 400 to 800 nm, covering almost the whole visible band, was observed from the device made of the SiO2 : Si : Mn2+ film at low reverse biases. The threshold voltage of the device is as low as 5 V. Spectra of the device demonstrate that the electroluminescence is attributed to Mn2+ and luminescence centers in the Si-rich SiO2 film. The authors interpret that Mn2+ excitation is mainly due to direct impact excitation of hot electrons, silicon nanocrystals in the SiO2 film help electrons tunnel from a silicon nanocrystal to an adjacent one, and are advantageous for generating hot electrons to excite Mn2+.

ac electroluminescence in thin‐film ZnSe : Mn

Green Yellow Light-Emitting-Diodes from Isoelectronically Doped Znse Quantum-Well Structures

AC electroluminescence of ZnS: Cu, Cl, Mn thin films in the structure In2O3(Sn)-ZnS: Cu, Cl, Mn-SiOx-Al

Electroluminescence efficiency profiles of Mn in ZnS ac thin‐film electroluminescence devices

Magnetophotoluminescence of Zn0.88mn0.12se Grown by Metal-Organic Chemical Vapor Deposition on Gaas Substrates

[Influence of Parameters of ZnS Film on the Organic/inorganic Composite Luminescence Devices].

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Alternating current driven electroluminescence from ZnSe/ZnS:Mn/ZnS nanocrystals

Emission from a Planar Structured Electroluminescent Device on Silicon Wafer

The Study of Optical Properties of Zn1-xMNxSe Thin Films Grown by MOCVD on GaAs Substrates

Electrophotoluminescence of Zno Film

Electroluminescent Characteristics of CdSe Colloidal Quantum Dots

Opto-electronic properties of ZnSSe films for liquid crystal light valve

Electroluminescence from Silicon-based Zn_2SiO_4:ZnO Films

Study of ZnS_xSe_(1-x) Thin Films for Ultraviolet LCLV in Transmission Mode

Electroluminescent and Carrier Transport Mechanisms of MgxZn1−xO∕Si Heterojunctions

Electroluminescence from a Mn2+ Activated SiO2:Si Film on N+-Si Substrate

Excitonic Spectra of ZnSe Thin Films Grown on GaAs Substrates

Defect-Related White-Light Emission from Zno in an N-Mg0.2zn0.8o/N-Zno/Sio (X) Heterostructure on N-Si

Mn-Substituted [zn1−xmnxse](deta)0.5 (x = 0−0.3) Inorganic−Organic Hybrid Nanobelts: Synthesis, Electron Paramagnetic Resonance Spectroscopy, and Their Temperature- and Pressure-Dependent Optical Properties

Giant Faraday Magneto-Optical Effects Induced by Mn2+ in Zn1−xMnxSe