How do the doping concentrations of N and B in graphene modify the water adsorption?

Thi Tan Pham,Thanh Ngoc Pham,Viorel Chihaia,Quang Anh Vu,Trung Thanh Pham,Le Van Thang,Do Ngoc Son,Thuat T. Trinh

DOI: https://doi.org/10.1039/d1ra01506k

IF: 4.036

2021-01-01

RSC Advances

Abstract:N and B doping content in graphene alters the microscopic geometrical structure and electronic properties of adsorbed water.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Tuneable Resonance Properties of Graphene by Nitrogen-Dopant

Hai Fei Zhan,Ye Wei,Yuan Tong Gu

DOI: https://doi.org/10.4028/www.scientific.net/amm.553.3

2014-01-01

Abstract:Doping as one of the popular methods to manipulate the properties of nanomaterials has received extensive application in deriving different types of graphene derivates, while the understanding of the resonance properties of dopant graphene is still lacking in literature. Based on the large-scale molecular dynamics simulation, reactive empirical bond order potential, as well as the tersoff potential, the resonance properties of N-doped graphene were studied. The studied samples were established according to previous experiments with the N atom’s percentage ranging from 0.38%-2.93%, including three types of N dopant locations, i.e., graphitic N, pyrrolic N and pyridinic N. It is found that different percentages of N-dopant exert different influence to the resonance properties of the graphene, while the amount of N-dopant is not the only factor that determines its impact. For all the considered cases, a relative large percentage of N-dopant (2.65% graphitic N-dopant) is observed to introduce significant influence to the profile of the external energy, and thus lead to an extremely low Q-factor comparing with that of the pristine graphene. The most striking finding is that the natural frequency of the defective graphene with N-dopant’s percentage higher than 0.89% appears larger than its pristine counterpart. For the perfect graphene, the N-dopant shows larger influence to its natural frequency. This study will enrich the current understanding of the influence of dopants on graphene, which will eventually shed lights on the design of different molecules-doped graphene sheet.
Resonance of Graphene Nanoribbons Doped with Nitrogen and Boron: a Molecular Dynamics Study

Ye Wei,Haifei Zhan,Kang Xia,Wendong Zhang,Shengbo Sang,Yuantong Gu

DOI: https://doi.org/10.3762/bjnano.5.84

IF: 3.1

2014-01-01

Beilstein Journal of Nanotechnology

Abstract:Based on its enticing properties, graphene has been envisioned with applications in the area of electronics, photonics, sensors, bio-applications and others. To facilitate various applications, doping has been frequently used to manipulate the properties of graphene. Despite a number of studies conducted on doped graphene regarding its electrical and chemical properties, the impact of doping on the mechanical properties of graphene has been rarely discussed. A systematic study of the vibrational properties of graphene doped with nitrogen and boron is performed by means of a molecular dynamics simulation. The influence from different density or species of dopants has been assessed. It is found that the impacts on the quality factor, Q, resulting from different densities of dopants vary greatly, while the influence on the resonance frequency is insignificant. The reduction of the resonance frequency caused by doping with boron only is larger than the reduction caused by doping with both boron and nitrogen. This study gives a fundamental understanding of the resonance of graphene with different dopants, which may benefit their application as resonators.
Influence of B doping and N doping on structure and electronic properties of graphene

Rui Ling Gao,Ling Miao,Jia Q. Song,You Wu

2009-01-01

Abstract:In this paper, based on density functional theory, the structural characteristics and electronic properties of B and N co-doped graphene are calculated by means of plane-wave pseudopotential (PWP) method. Our results indicate that B mono-doped and N mono-doped graphene show the properties of positive and negative semiconductor, respectively. Under the case of neighboring B-N co-doped graphene, the electronic properties hardly alter, which are analysed and assigned to the reason of compensation of doping atoms. Meanwhile, the results are performed, which show that deformation of crystal lattice caused by doping is localized.
Theoretical Investigation of the Adsorption of Nh3 on B-Doped Graphene

Dongmei Bi,Liang Qiao,Xiaoying Hu,Wen Zhi

DOI: https://doi.org/10.4028/www.scientific.net/kem.474-476.720

2011-01-01

Key Engineering Materials

Abstract:The geometrical structures, the electronic structures, and the NH3 adsorption properties of pure and B-doped graphene have been investigated using density-functional theory. The density of states (DOS) of pure and B-doped graphene, the adsorption configurations and the adsorption energies of NH3 adsorbed on pure and B-doped graphene, and the charge transfer between NH3 and B-doped graphene have been calculated in details. The results indicate that boron doping can enhance the DOS at the Fermi level and slightly enhance the physical adsorption of NH3 on the surface of graphene. Furthermore, the doping of boron can result in the charge redistribution of graphene, which can induce the charge transfer between NH3 and graphene and change the transport properties of graphene.
Unlocking the chemistry of graphene: the impact of charge carrier concentration on molecular adsorption on graphene

Maciej J. Szary

DOI: https://doi.org/10.26434/chemrxiv-2024-kxj6s

2024-06-06

Abstract:Both intentional and unintentional doping of graphene is a common occurrence, as its carrier concentration can be modulated through various mechanisms. While extensively explored in electronics for achieving desirable conductivity, other aspects of doping remain largely untapped, presenting opportunities for further innovation. This study demonstrates that carrier concentration serves as a powerful and selective tool for modulating the interaction between molecular adsorbates and graphene. The effects are tunable and evident for both n-type and p-type doping, with low-to-medium modulation at doping levels of ±1012 e/cm2 , and substantial enhancements, with interaction strength increases exceeding 150% and hundreds of meV, at doping levels of ±1013 e/cm2 . These effects are also molecule-specific, with significant enhancements for species such as water (H2O), ammonia (NH3), and aluminum chloride (AlCl3 ), while having minimal impact on species like hydrogen (H2 ). This finding not only elucidates the fundamental chemical behavior of graphene but also provides a versatile method to tailor its surface chemistry for applications in sensors, catalysis, and electronic devices. The insights from this research pave the way for advanced material design strategies, leveraging the tunable nature of graphene’s properties to optimize its interaction with various molecular species.

Chemistry
Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Chundong Wang,Koen Schouteden,Qi-Hui Wu,Zhe Li,Jianjun Jiang,Chris Van Haesendonck

DOI: https://doi.org/10.1088/0957-4484/27/36/365702

IF: 3.5

2016-01-01

Nanotechnology

Abstract:Atomic-level substitutional doping can significantly tune the electronic properties of graphene. Using low-temperature scanning tunneling microscopy and spectroscopy, the atomic-scale crystalline structure of graphene grown on polycrystalline Cu, the distribution of nitrogen dopants and their effect on the electronic properties of graphene were investigated. Both the graphene sheet growth and nitrogen doping were performed using microwave plasma-enhanced chemical vapor deposition. The results indicated that the nitrogen dopants preferentially sit at the grain boundaries of the graphene sheets and confirmed that plasma treatment is a potential method to incorporate foreign atoms into the graphene lattice to tailor the graphene's electronic properties.
Interaction of water with nitrogen-doped graphene

Azim Fitri Zainul Abidin,Ikutaro Hamada

DOI: https://doi.org/10.1103/PhysRevB.105.075416

2022-02-18

Abstract:We have studied the interaction of water and graphene doped with nitrogen in different configurations, namely, graphitic and pyridinic nitrogen, by means of the van der Waals density functional. We found that the local nitrogen configuration plays a key role in determining the stable water configuration, while the dispersion force is responsible for the water adsorption. With the graphitic nitrogen, water prefers to orient with its oxygen toward the surface, whereas for the pyridinic nitrogen it prefers to orient with its hydrogens toward the surface, because nitrogen is positively and negatively charged for the former and the latter, respectively. Our results have great implications for the modeling of the interface between water and nitrogen-doped graphitic systems. https://doi.org/10.1103/PhysRevB.105.075416 ©2022 American Physical Society

English Else
Investigating geometries and electronic states of boron and nitrogen Co-doping graphene nanoribbons from a DFTB algorithm

Fangzhou Jiang,Jiajing Li,Ruotian Wang,Qihang Han,Lin Zhang

DOI: https://doi.org/10.1016/j.mssp.2024.108800

IF: 4.1

2024-08-20

Materials Science in Semiconductor Processing

Abstract:Self consistent charge-density functional tight binding simulations are used to investigate the effects of doping B and N atoms on structures and electronic states of armchair graphene nanoribbons passivated by H atoms at the ribbon edges. We considered ten different doping configurations of the doping ribbons, which are categorized into two groups based on whether B and N atoms are in the same carbon ring. The geometric configurations, energy, charge density differences, and Mulliken charges are characterized. The co-doping of B and N atoms in the ribbons significantly affects band structures for different doping arrangements. As covalent bonds form between B and C atoms, the Mulliken population on B atoms changes significantly when B and N atoms are located at different positions of the nanoribbons. The electrical information helps us understand how doping can adjust the electronic states of the graphene nanoribbons to meet the various requirements of electronic devices based on these nanoribbons.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Influence of Water on the Electronic Structure of Metal-Supported Graphene: Insights from Van Der Waals Density Functional Theory

Xiao Li,Ji Feng,Enge Wang,Sheng Meng,Jiri Klimes,Angelos Michaelides

DOI: https://doi.org/10.1103/physrevb.85.085425

2012-01-01

Abstract:We investigate the interaction between water and metal-supported graphene through van der Waals density functional theory calculations. Our results show a systematic increase in the adsorption energy of water on graphene in the presence of underlying metal substrates. In addition, we find that the electronic nature of the graphene-metal contacts behave differently upon water adsorption: In the case of a weak, physical graphene-metal contact, the charge carrier doping level of graphene is tuned by water, resulting in a Fermi level shift on the order of similar to 100 meV. In the case of a strong chemical graphene-metal contact, the pi and pi* bands of graphene are hardly perturbed by water adsorption. These results illustrate the correlated nature of the interactions between water, graphene, and metal substrates, and show that the electronic structure and the doping level of graphene can be tailored by water deposition.
Study of heteroatom-doped graphene properties using DFT/TD-DFT, QTAIM, NBO, and NCI calculations

Ines Boudjahem,Abderrafik Nemamcha,Hayet Moumeni,Nawal Brahimi

DOI: https://doi.org/10.1007/s11224-024-02427-w

2024-12-06

Structural Chemistry

Abstract:This study investigates the impact of doping various heteroatoms (O, S, N, B, and P) within pristine graphene lattice to tailor its structural, electronic, optical, and non-linear optical (NLO) properties through density functional theory (DFT) calculations. Our findings demonstrate that the introduction of these heteroatoms significantly alters the bonding configuration of neighboring atoms in the graphene lattice. The thermodynamic stability of both pristine and doped graphene structures was confirmed by calculating relevant parameters. Doping graphene with O, S, N, B, and P modifies its chemical reactivity. By employing the global molecular reactivity descriptors, O-doped graphene (O–Gr) was identified as the softest compound and S-doped graphene (S–Gr) as the hardest, with respective energy gaps of 1.006 eV and 4.844 eV. Vibrational analysis of the doped graphene systems further corroborated these findings, indicating a disruption of the original pristine graphene structure upon doping. Time-dependent DFT (TD-DFT) analysis revealed that the maximum absorption wavelength is achieved in B–Gr compared to the other investigated systems. Reduced density gradient (RDG–NCI) and quantum theory of atoms in molecules (QTAIM) calculations indicate that all dopant atoms, except P, form covalent bonds with their adjacent carbon atoms. In contrast, P-doping exhibits a partial bonding character. Furthermore, the localized electron density resulting from doping enhances the attractive forces between atoms, a desirable characteristic for promising NLO materials. This observation is consistent with the calculated first-order hyperpolarizability values. These findings suggest that heteroatom doping can effectively modify the properties of pristine graphene for designing novel graphene-based materials.

chemistry, multidisciplinary, physical,crystallography
Elemental Superdoping of Graphene and Carbon Nanotubes.

Yuan Liu,Yuting Shen,Litao Sun,Jincheng Li,Chang Liu,Wencai Ren,Feng Li,Libo Gao,Jie Chen,Fuchi Liu,Yuanyuan Sun,Nujiang Tang,Hui-Ming Cheng,Youwei Du

DOI: https://doi.org/10.1038/ncomms10921

IF: 16.6

2016-01-01

Nature Communications

Abstract:Doping of low-dimensional graphitic materials, including graphene, graphene quantum dots and single-wall carbon nanotubes with nitrogen, sulfur or boron can significantly change their properties. We report that simple fluorination followed by annealing in a dopant source can superdope low-dimensional graphitic materials with a high level of N, S or B. The superdoping results in the following doping levels: (i) for graphene, 29.82, 17.55 and 10.79 at% for N-, S-and B-doping, respectively; (ii) for graphene quantum dots, 36.38 at% for N-doping; and (iii) for single-wall carbon nanotubes, 7.79 and 10.66 at% for N- and S-doping, respectively. As an example, the N-superdoping of graphene can greatly increase the capacitive energy storage, increase the efficiency of the oxygen reduction reaction and induce ferromagnetism. Furthermore, by changing the degree of fluorination, the doping level can be tuned over a wide range, which is important for optimizing the performance of doped low-dimensional graphitic materials.
Growth and electronic structure of boron-doped graphene

J. Gebhardt,R. J. Koch,W. Zhao,O. Höfert,K. Gotterbarm,S. Mammadov,C. Papp,A. Görling,H.-P. Steinrück,Th. Seyller

DOI: https://doi.org/10.1103/physrevb.87.155437

IF: 3.7

2013-04-29

Physical Review B

Abstract:The doping of graphene to tune its electronic properties is essential for its further use in carbon-based electronics. Adapting strategies from classical silicon-based semiconductor technology, we use the incorporation of heteroatoms in the 2D graphene network as a straightforward way to achieve this goal. Here, we report on the synthesis of boron-doped graphene on Ni(111) in a chemical vapor deposition process of triethylborane on the one hand and by segregation of boron from the bulk of the substrate crystal on the other hand. The chemical environment of boron was determined by x-ray photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy was used to analyze the impact on the band structure. Doping with boron leads to a shift of the graphene bands to lower binding energies. The shift depends on the doping concentration and for a doping level of 0.3 ML a shift of up to 1.2 eV is observed. The experimental results are in agreement with density-functional calculations. Furthermore, our calculations suggest that doping with boron leads to graphene preferentially adsorbed in the top-fcc geometry, since the boron atoms in the graphene lattice are then adsorbed at substrate fcc-hollow sites. The smaller distance of boron atoms incorporated into graphene compared to graphene carbon atoms leads to a bending of the doped graphene sheet in the vicinity of the boron atoms. By comparing calculations of doped and undoped graphene on Ni(111), as well as the respective freestanding cases, we are able to distinguish between the effects that doping and adsorption have on the band structure of graphene. Both doping and bonding to the surface result in opposing shifts on the graphene bands.

physics, condensed matter, applied,materials science, multidisciplinary
Contrasting Elastic Properties of Heavily B- and N-doped Graphene, with Random Distributions Including Aggregates

Karolina Z. Milowska,Magdalena Woinska,Malgorzata Wierzbowska

DOI: https://doi.org/10.1021/jp403552k

2013-09-13

Abstract:We focused on elastic properties of B- and N-doped graphene in wide range of concentrations up to 20%. The Young's, bulk and shear moduli and Poisson's ratio have been calculated by means of the density functional theory for a representative set of supercells with disordered impurity patterns including aggregates. In contrast to earlier work, it is demonstrated that doping with nitrogen even strengthens the graphene layers, whereas incorporation of boron induces large structural and morphological changes seen in simulated STM images. Young's and shear moduli increase or decrease with the doping strength for nitrogen or boron, respectively, while bulk modulus and Poisson's ratio exhibit opposite trends. Elastic properties of samples for both types of impurities are strongly related to the electronic structures, especially for heavy doping (>12%). Local arrangements of dopants and an agregation or separation of impurities play crucial role in the determination of stiffness in the investigated systems. Interestingly, these findings are opossed for B- and N-contained samples.

Materials Science,Mesoscale and Nanoscale Physics
Insight into Adsorption of C₂H₂ and H₂ on Doped Graphene with Nonmetallic Atom (N, P, S): A Density Functional Theory Study

Liqiong Huang,Wei Chu,Xuan Zhou,Yanan Zhou,Ying Xue

DOI: https://doi.org/10.1166/jnn.2020.16982

2020-02-01

Abstract:A DFT investigation was performed to evaluate the structure, electronic properties of the doped graphene, and the adsorption behavior of C₂H₂ and H₂ on the graphene sheet. Two kinds of doping scenarios are considered, namely dopants into pristine graphene and vacancy graphene. It is observed that the doping energy is negative for dopant (N, P, S) into vacancy graphene at pyridinictype site, yet it is positive at graphitic-type site for pristine graphene. It could be inferred that the introducing process is exothermic reaction for defective graphene. Meanwhile, for the adsorption of C₂H₂ on the surface of defective graphene, we notice that C₂H₂ would prefer to be adsorbed at the top site of the doping atom and the adsorption energy increases with the introducing of dopants, indicating that the dopant would enhance the interaction between C₂H₂ and graphene. Regarding hydrogen molecule, the dopant has less promotion effect on the adsorption. Moreover, the graphene plays a role of electron donor while the gas molecule (C₂H₂/H₂) is the electron acceptor when it is adsorbed. For the co-adsorption, the C₂H₂ is privileged to interact with the graphene and the pre-adsorbed C₂H₂ on doped graphene would weaken the opportunity of the uptake of H₂ molecule. We anticipate that our results would provide information to design the optimized catalysts.
Doping graphene by adsorption of polar molecules at the oxidized zigzag edges

Julia Berashevich,Tapash Chakraborty

DOI: https://doi.org/10.1103/PhysRevB.81.205431

2009-11-18

Abstract:We have theoretically investigated the electronic and magnetic properties of graphene whose zigzag edges are oxidized. The alteration of these properties by adsorption of $\mathrm{H_{2}O}$ and $\mathrm{NH_3}$ molecules have been considered. It was found that the adsorbed molecules form a cluster along the oxidized zigzag edges of graphene due to interaction with the electro-negative oxygen. Graphene tends to donate a charge to the adsorbates through the oxygen atoms and the efficiency of donation depends on the intermolecular distance and on the location of the adsorbed molecules relative to the plane of graphene. It was found that by appropriate selection of the adsorbates, a controllable and gradual growth of $p$-doping in graphene with a variety of adsorbed molecules can be achieved.

Chemical Physics,Computational Physics
Synthesis, Structure and Properties of Boron and Nitrogen Doped Graphene

L. S. Panchakarla,K. S. Subrahmanyam,S. K. Saha,A. Govindaraj,H. R. Krishnamurthy,U. V. Waghmare,C. N. R. Rao

DOI: https://doi.org/10.48550/arXiv.0902.3077

2009-02-18

Abstract:Two-dimensional graphene exhibits many fascinating properties such as ballistic electronic conduction and quantum Hall effect at room temperature.1-4 Graphene doped electrochemically or through charge-transfer with electron-donor and -acceptor molecules,5-7 shows marked changes in electronic structure, with characteristic signatures in the Raman spectra.5-10 Substitutional doping, universally used in tuning properties of semiconductors, could be a powerful tool to control the electronic properties of graphene. Here, we present the structure and properties of boron and nitrogen doped graphenes, obtained by more than one method involving arc discharge in appropriate gaseous atmosphere, by using modified graphite electrode or by the transformation of nano-diamond. Using a combination of experiment and firstprinciples theory, we demonstrate systematic changes in the carrier-concentration and electronic structure of graphenes with B/N-doping, accompanied by stiffening of the Gband and intensification of the defect related D-band in the Raman spectra. Such n/p - type graphenes obtained without external fields or chemical agents should find device applications.

Materials Science
Effects of Element Doping and H2O Presence on CO2 Adsorption Using Hexagonal Boron Nitride

Pengbo Hu,Shujuan Wang,Yuqun Zhuo

DOI: https://doi.org/10.1016/j.seppur.2021.119182

IF: 8.6

2021-01-01

Separation and Purification Technology

Abstract:The characteristics of CO2 adsorbing on hexagonal boron nitride (h-BN) under various conditions are key to its application in industries. In this study, h-BN is selected as the adsorbent for CO2 adsorption and carbon/nitrogen (C/N) is the doping element. By means of density functional theory (DFT) calculations, adsorption structures, adsorption energies, distribution of electron clouds, transition state (TS) processes (free state -> adsorption state) and effects of H2O are used to explain adsorption mechanisms of CO2 on pure/doped h-BN. According to calculation results, with doping of C/N, the delocalized pi bond of h-BN is transformed and then CO2 adsorption on the specific site is enhanced. In the meantime, this study also reveals that h-BN should be treated as the tertiary amine in a way because H2O presence could obviously facilitate CO2 adsorption on pure/doped h-BN, consistent with existing studies. What is more, the study uncovers that the TS energy barrier of CO2 adsorption is another factor that affects adsorption strength. It is found that doping of C/N and H2O presence could reduce adsorption energy barriers and facilitate CO2 adsorption. The research results could provide valuable information about exploiting h-BN for massive CO2 adsorption in industrial situations.
Efficient doping of functionalized graphene and h-BN by molecular adsorption

Shiyang Fu,Yuhan Yang,Mai Zhang,Nan Gao,Qiliang Wang,Hongdong Li

DOI: https://doi.org/10.1088/1402-4896/ad406d

2024-04-20

Physica Scripta

Abstract:In this work, we investigate the structural and electronic properties of molecular acceptors and donors adsorbed on H/F-functionalized graphene and h-BN by using first principles calculation. Graphane adsorbed with acceptors show p-type doping features, and fluorographene with donors are n-type doping. On the other hand, both H- and Ffunctionalized BN adsorbed systems exhibit n-type doping. The different doping characteristics depend on the relative energy level alignment of the molecules and substrates, which determines the electron transfer direction. In addition, the bands of adatoms are close to the band edges of substrates near Fermi level (0.0004‒0.113 eV), denoting the efficient doping for H/F-functionalized graphene and BN. These results provide important indications for designing novel two-dimensional materials with suitable doped characteristics for opto electronics applications.

physics, multidisciplinary
Tuning the Doping Types in Graphene Sheets by N Monoelement

Chuanxu Ma,Qing Liao,Haifeng Sun,Shulai Lei,Yi Zheng,Ruoting Yin,Aidi Zhao,Qunxiang Li,Bing Wang

DOI: https://doi.org/10.1021/acs.nanolett.7b04249

IF: 10.8

2017-01-01

Nano Letters

Abstract:The doping types of graphene sheets are generally tuned by different dopants with either three or five valence electrons. As a five-valence-electrons element, however, nitrogen dopants in graphene sheets have several substitutional geometries. So far, their distinct effects on electronic properties predicted by theoretical calculations have not been well identified. Here, we demonstrate that the doping types of graphene can be tuned by N monoelement under proper growth conditions using chemical vapor deposition (CVD), characterized by combining scanning tunneling microscopy/spectroscopy, X-ray/ultraviolet photoelectron spectroscopy, Hall effect measurement, Raman spectroscopy, and density functional theory calculations. We find that a relatively low partial pressure of CH4 (mixing with NH3) can lead to the growth of dominant pyridinic N substitutions in graphene, in contrast with the growth of dominant graphitic N substitutions under a higher partial pressure of CH4. Our results unambiguously confirm that the pyridinic N leads to the p-type doping, and the graphitic N leads to the n-type doping. Interestingly, we also find that the pyridinic N and the graphitic N are preferentially separated in different domains. Our findings shed light on continuously tuning the doping level of graphene monolayers by using N monoelement, which can be very convenient for growth of functional structures in graphene sheets.
Phases of 4He and H2 adsorbed on doped graphene

M. C. Gordillo,J. Boronat

2023-10-19

Abstract:The influence of attractive boron impurities, embedded on a graphene sheet, on the phase diagrams of $^4$He and H$_2$ adsorbed on top was studied using the diffusion Monte Carlo method. The doping of graphene was made by distributing the boron atoms following the same pattern found in an experimentally synthesized substrate. Our results show that while the different incommensurate solid phases of both adsorbates remain largely unchanged after doping, the liquid/gas equations of state are significanty different from the ones on pristine graphene. Doping graphene produces new translationally invariant stable phases for $^4$He, depending on the concentration of boron impurities, but makes the H$_2$ ground state to remain solid. In addition, several new registered phases appear for both adsorbates.

Other Condensed Matter

How do the doping concentrations of N and B in graphene modify the water adsorption?

Tuneable Resonance Properties of Graphene by Nitrogen-Dopant

Resonance of Graphene Nanoribbons Doped with Nitrogen and Boron: a Molecular Dynamics Study

Influence of B doping and N doping on structure and electronic properties of graphene

Theoretical Investigation of the Adsorption of Nh3 on B-Doped Graphene

Unlocking the chemistry of graphene: the impact of charge carrier concentration on molecular adsorption on graphene

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Interaction of water with nitrogen-doped graphene

Investigating geometries and electronic states of boron and nitrogen Co-doping graphene nanoribbons from a DFTB algorithm

Influence of Water on the Electronic Structure of Metal-Supported Graphene: Insights from Van Der Waals Density Functional Theory

Study of heteroatom-doped graphene properties using DFT/TD-DFT, QTAIM, NBO, and NCI calculations

Elemental Superdoping of Graphene and Carbon Nanotubes.

Growth and electronic structure of boron-doped graphene

Contrasting Elastic Properties of Heavily B- and N-doped Graphene, with Random Distributions Including Aggregates

Insight into Adsorption of C₂H₂ and H₂ on Doped Graphene with Nonmetallic Atom (N, P, S): A Density Functional Theory Study

Doping graphene by adsorption of polar molecules at the oxidized zigzag edges

Synthesis, Structure and Properties of Boron and Nitrogen Doped Graphene

Effects of Element Doping and H2O Presence on CO2 Adsorption Using Hexagonal Boron Nitride

Efficient doping of functionalized graphene and h-BN by molecular adsorption

Tuning the Doping Types in Graphene Sheets by N Monoelement

Phases of 4He and H2 adsorbed on doped graphene