Abstract:The effect of impurities on the physical properties of materials with an otherwise perfectly crystalline order have intrigued scientist for decades. In this respect, the availability of 2D layered materials such as graphene and the ability to introduce structural imperfections in them through doping has opened up possibilities for studying the consequence of disorder at the atomic level. In this study, we report on investigation of low temperature electrical transport measurements of B and N co-doped graphene layers C(B,N). These systems have a unique combination of impurities including both atomistically separated B and N species, as well as hexagonal boron nitride (h-BN) units within the graphitic C lattice. Despite its graphene-like lattice structure, h-BN is a wide band-gap material (>4.5 eV) due to a breakdown in its sublattice mirror symmetry. Hence, asymmetrically co-doped C(B,N) with n B ≠n N , is a unique combination of impurity doping and alloy formation within a 2D confined geometry. Earlier, the presence of h-BN it has been shown to open up a band gap in the otherwise gap-less graphene. In this work, we present a detailed investigation of the temperature dependence of transport in asymmetrically co-doped C(B,N). We find that the temperature dependence of resistance (5K < T < 400 K) of pure graphene shows a metallic behavior, whereas the C(B,N) samples show an increasingly semiconducting behavior with increasing doping levels. The temperature dependence of these samples could be approximately classified into two regimes. Within the studied range, at higher temperatures, the doped samples showed a band-gap dominated Arrhenius-like temperature dependence. At the lowest temperatures, the temperature dependence deviates from an activated behavior, and presents evidence for a conduction mechanism that is consistent with Mott's 2D-Variable Range Hopping (2D-VRH).

Contrasting Elastic Properties of Heavily B- and N-doped Graphene, with Random Distributions Including Aggregates

Resonance of Graphene Nanoribbons Doped with Nitrogen and Boron: a Molecular Dynamics Study

Tuneable Resonance Properties of Graphene by Nitrogen-Dopant

Tensile Properties of a Boron/nitrogen-Doped Carbon Nanotube–graphene Hybrid Structure

Influence of B doping and N doping on structure and electronic properties of graphene

Synthesis, Structure and Properties of Boron and Nitrogen Doped Graphene

Tuning the Electrical Properties of Large Area Graphene Through Boron-Nitrogen Co-Doping

Properties of single-layer graphene doped by nitrogen with different concentrations

Silicon and Silicon-Nitrogen Impurities in Graphene: Structure, Energetics, and Effects on Electronic Transport

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Density Functional Theory Study Of Bn-Doped Graphene Superlattice: Role Of Geometrical Shape And Size

Possible N/P-Type Conductivity of Two-Dimensional Graphene Oxide by Boron and Nitrogen Doping: Evaluated Via Constrained Excitation

Mechanical Responses of Boron-Doped Monolayer Graphene

First-Principle Study of Dislocation Slips in Impurity Doped Graphene

Investigating geometries and electronic states of boron and nitrogen Co-doping graphene nanoribbons from a DFTB algorithm

Growth and electronic structure of boron-doped graphene

Study of heteroatom-doped graphene properties using DFT/TD-DFT, QTAIM, NBO, and NCI calculations

Tuneable effects of pyrrolic N and pyridinic N on the enhanced field emission properties of nitrogen-doped graphene

Structural characterization of nitrogen-doped γ -graphynes by computational X-ray spectroscopy

The impact of nitrogen doping on the linear and nonlinear terahertz response of graphene

High-Temperature Superconductivity in Heavily N- or B-Doped Graphene