Abstract:An interdigitated gold (Au) nanofilm was introduced on graphene, supported by a p-type silicon (p-Si) substrate, as an optoelectronic photodetector based on an Au/graphene/p-Si heterojunction by a low-cost method. Tunable photocurrent (photoconductivity) response to laser power density was realized under the modulation of the Au nanofilm and the Si layer on the carrier transport through graphene. Photoelectric measurements demonstrated that the device generated positive photocurrent when illuminated at low laser power density and negative photocurrent when illuminated at high laser power density. Positive photocurrents of 9 A and 5 A were generated at 1.13 W cm(-2) (power approximate to 20 nW) and 0.32 W cm(-2) (power approximate to 40 nW) under irradiation of 532 nm and 1064 nm lasers, respectively; responsivities of up to 450 A W-1 and 125 A W-1, were achieved, respectively, owing to the increase in carrier density caused by photo-induced carrier injection. At high power density, the mobility of graphene declined due to the scattering effect between carriers and phonons (bolometric effect), which was further strengthened by the local high-temperature field caused by the Au nanofilm. The negative photocurrent of up to several milliamperes was clearly observed under irradiation of 532 nm and 1064 nm lasers. The photocurrent response versus power density behavior of the photodetector could be modulated by the source-drain bias and laser wavelength. The device had a rapid response rate of the order of several hundred microseconds and good stability. The photodetector realized high-speed conversion of light density to photocurrent with different signs, demonstrating good potential for future applications in optoelectronic devices.

A Facile Method for Improving Detectivity of Graphene/p‐Type Silicon Heterojunction Photodetector

A Facile Method for Improving Detectivity of Graphene/p‐Type Silicon Heterojunction Photodetector

Controllable Coupling Effects Enhance the Performance of Ionic-Polymer-Gated Graphene Photodetectors

High Detectivity Graphene-Silicon Heterojunction Photodetector.

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

Graphene-silicon-graphene Schottky Junction Photodetector with Field Effect Structure.

Seed‐Initiated Synthesis and Tunable Doping Graphene for High‐Performance Photodetectors

Tuning Chemical Potential Difference Across Alternately Doped Graphene P-N Junctions for High-Efficiency Photodetection.

Remarkable Noise Reduction in High-Stability Self-Powered Doped Graphene/Si-Quantum Dot Broadband Photodetectors by Using Graphene Quantum Dots as an Interlayer

Demonstration of low power and high–speed graphene/Silicon heterojunction near–infrared photodetector

High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction

Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes

A tunable positive and negative photoconductive photodetector based on a gold/graphene/p-type silicon heterojunction

Heterostructured Graphene Quantum Dot/wse 2 /si Photodetector with Suppressed Dark Current and Improved Detectivity

Investigation of Graphene Single Layer on P-Type and N-Type Silicon Heterojunction Photodetectors

High Detectivity Graphene/si Heterostructure Photodetector with a Single Hydrogenated Graphene Atomic Interlayer for Passivation and Carrier Tunneling.

Seamless Lateral Graphene P–n Junctions Formed by Selective in Situ Doping for High-Performance Photodetectors

Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

Gate Modulation Enhanced Position-Sensitive Detectors Using Graphene/silicon-on-insulator Structure

Dark Current Reduction and Performance Improvements in Graphene/Silicon Heterojunction Photodetectors Obtained Using a Non-Stoichiometric HfOx Thin Oxide Layer