Tuning Chemical Potential Difference Across Alternately Doped Graphene P-N Junctions for High-Efficiency Photodetection.

Li Lin,Xiang Xu,Jianbo Yin,Jingyu Sung,Zhenjun Tan,Ai Leen Koh,Huan Wang,Hailin Peng,Yulin Chen,Zhongfan Liu

DOI: https://doi.org/10.1021/acs.nanolett.6b00803

IF: 10.8

2016-01-01

Nano Letters

Abstract:Being atomically thin, graphene-based p-n junctions hold great promise for applications in ultrasmall high-efficiency photodetectors. It is well-known that the efficiency of such photodetectors can be improved by optimizing the chemical potential difference of the graphene p-n junction. However, to date, such tuning has been limited to a few hundred millielectronvolts. To improve this critical parameter, here we report that using a temperature-controlled chemical vapor deposition process, we successfully achieved modulation-doped growth of an alternately nitrogen- and boron-doped graphene p-n junction with a tunable chemical potential difference up to 1 eV. Furthermore, such p-n junction structure can be prepared on a large scale with stable, uniform, and substitutional doping and exhibits a single-crystalline nature. This work provides a feasible method for synthesizing low-cost, large-scale, high efficiency graphene p-n junctions, thus facilitating their applications in optoelectronic and energy conversion devices.