Abstract:Analogous to graphite, hexagonal boron nitride (h-BN) has a layered structure composed of boron and nitrogen atoms that are alternatively bond to each other in a honeycomb array. As the layers are held together by weak van der Waals forces, h-BN thin films can be grown on surfaces of various metal crystals in a layer-by-layer manner, which is again similar to graphene sheets and thus attracts a lot of research interests. In this work, scanning tunneling microscope and spectroscope (STM and STS) were applied to the study of an h-BN thin film with a thickness of about 10 nm grown on Cu foil by means of chemical vapor deposition. X-ray diffraction from the Cu foil shows only one strong peak of Cu(200) in the angle range of 40-60, indicating that the Cu foil is mainly Cu(100). After sufficient annealing in an UHV chamber, the h-BN film sample is transferred to a cooling stage (77 K) for STM/STS measurement. Its high quality is confirmed by a large-scale STM scan that shows an atomically flat topography. A series of dI/dV data taken within varied energy windows all exhibit similar U shapes but with different bottom widths that monotonously decrease with the sweeping energy window. The dI/dV curve taken in the energy window of [-1 V, +1 V] even shows no energy gap in spite that h-BN film is insulating with a quite large energy gap of around 6 eV, as observed in a large-energy-window dI/dV curve (from -5 V to +5 V). These results indicate that the STM images reflect the spatial distribution of tunneling barriers between Cu(100) substrate and STM tip, rather than the local density of states of the h-BN surface. At high sample biases (from 4 V to 1 V), STM images exhibit an electronic modulation pattern with short range order. The modulation pattern displays a substructure in low-bias STM images (less than 100 mV), which finally turns to the (11) lattice of h-BN surface when the sample bias is extremely lowered to 3 mV. It is found that the electronic modulation pattern cannot be fully reproduced by superimposing hexagonal BN lattice on tetragonal Cu(100) lattice, no matter what their relative in-plane crystal orientation is. This implies that the electronic modulation pattern in the STM images is not a Mori pattern due to lattice mismatch. We speculate that it may originate from spatial distribution of tunneling barrier induced by adsorption of H, B and/or N atoms on the Cu(100) surface in the CVD growth process.

Local stiffness and work function variations of hexagonal boron nitride on Cu(111)

Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns.

Stiffness and Thickness of Boron-Nitride Nanotubes

Bending and Interlayer Shear Moduli of Ultrathin Boron Nitride Nanosheet

Scanning Tunneling Microscopy Study of H-Bn Thin Films Grown on Cu Foils

Investigating the Electrical Properties of Monolayer and Bilayer h‐BNs via Atomic Force Microscopy

A Molecular Dynamics Study of the Mechanical Properties of H-Bcn Monolayer Using a Modified Tersoff Interatomic Potential

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Incommensurability and negative thermal expansion of single layer hexagonal boron nitride

Thickness-Dependent Cross-Plane Thermal Conductivity Measurements of Exfoliated Hexagonal Boron Nitride

Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride

Effect of substitutional and vacancy defects on the electrical and mechanical properties of 2D-hexagonal boron nitride

Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride

Local Work Function for Cu(111)–Au Surface Studied by Scanning Tunneling Microscopy

Long Phonon Mean Free Paths Observed in Cross-plane Thermal-Conductivity Measurements of Exfoliated Hexagonal Boron Nitride

Thermomechanical properties of a single hexagonal boron nitride sheet

Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

Electrical homogeneity of large-area chemical vapor deposited multilayer hexagonal boron nitride sheets

Anomalous isotope effect on mechanical properties of single atomic layer Boron Nitride

Bandgap renormalization and work function tuning in MoSe 2 /hBN/Ru(0001) heterostructures

Determining of Electron Affinity and Work Function of Sp2-Bonded Nanocrystalline Boron Nitride Thin Films