Abstract:The observation of novel physical phenomena such as Hofstadter's butterfly, topological currents and unconventional superconductivity in graphene have been enabled by the replacement of SiO$_2$ with hexagonal Boron Nitride (hBN) as a substrate and by the ability to form superlattices in graphene/hBN heterostructures. These devices are commonly made by etching the graphene into a Hall-bar shape with metal contacts. The deposition of metal electrodes, the design and specific configuration of contacts can have profound effects on the electronic properties of the devices possibly even affecting the alignment of graphene/hBN superlattices. In this work we probe the strain configuration of graphene on hBN contacted with two types of metal contacts, two-dimensional (2D) top-contacts and one-dimensional (1D) edge-contacts. We show that top-contacts induce strain in the graphene layer along two opposing leads, leading to a complex strain pattern across the device channel. Edge-contacts, on the contrary, do not show such strain pattern. A finite-elements modelling simulation is used to confirm that the observed strain pattern is generated by the mechanical action of the metal contacts clamped to the graphene. Thermal annealing is shown to reduce the overall doping whilst increasing the overall strain, indicating and increased interaction between graphene and hBN. Surprisingly, we find that the two contacts configurations lead to different twist-angles in graphene/hBN superlattices, which converge to the same value after thermal annealing. This observation confirms the self-locking mechanism of graphene/hBN superlattices also in the presence of strain gradients. Our experiments may have profound implications in the development of future electronic devices based on heterostructures and provide a new mechanism to induce complex strain patterns in 2D materials.

Incommensurability and negative thermal expansion of single layer hexagonal boron nitride

Strain modulation of epitaxial h-BN on sapphire: the role of wrinkle formation for large-area two-dimensional materials

Thermal expansion in 2D honeycomb structures: Role of transverse phonon modes

Isotope effect on the thermal expansion coefficient of atomically thin boron nitride

Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride

Direct Measurement of Tensile Mechanical Properties of Few-Layer Hexagonal Boron Nitride (H-Bn)

Biaxial Compressive Strain Engineering in Graphene/Boron Nitride Heterostructures

Negative Thermal expansion of pure and doped Graphene

Local stiffness and work function variations of hexagonal boron nitride on Cu(111)

Thermomechanical properties of a single hexagonal boron nitride sheet

Strain-engineering of twist-angle in graphene/hBN superlattice devices

Interlayer coupling-induced controllable negative differential thermal resistance in graphene/h-BN van der Waals heterostructure

Anisotropic thermo-mechanical response of layered hexagonal boron nitride and black phosphorus: application as a simultaneous pressure and temperature sensor

Thermal conductivity of sliding bilayer h-BN and its manipulation with strain and layer confinement

Strain effects on the interfacial thermal conductance of graphene/h-BN heterostructure

Phonon Polariton-assisted Infrared Nanoimaging of Local Strain in Hexagonal Boron Nitride

The contribution of phonons to the thermal expansion of some simple cubic hexaboride structures: SmB6, CaB6, SrB6 and BaB6

Boron Nitride Monolayer: A Strain-Tunable Nanosensor

Understanding thermal transport in asymmetric layer hexagonal boron nitride heterostructure.

Interfacial Thermal Resistance of 2D and 1D Carbon/hexagonal Boron Nitride Van Der Waals Heterostructures

Strain-Driven High Thermal Conductivity in Hexagonal Boron Phosphide Monolayer