Engineering Co Vacancies for Tuning Electrical Properties of p-Type Semiconducting Co 3 O 4 Films
Ping Wang,Chao Jin,Dongxing Zheng,Tiebin Yang,Yuchen Wang,Rongkun Zheng,Haili Bai
DOI: https://doi.org/10.1021/acsami.1c05748
2021-05-26
Abstract:Spinel oxide Co<sub>3</sub>O<sub>4</sub> has attracted more and more attention for energy- and environment-related applications. In order to tune the electrical properties of Co<sub>3</sub>O<sub>4</sub>, p-type semiconducting Co<sub>3</sub>O<sub>4</sub> films were fabricated on the Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)<sub>0.7</sub>Ti<sub>0.3</sub>O<sub>3</sub> (PMN-PT), MgAl<sub>2</sub>O<sub>4</sub> (MAO), and SrTiO<sub>3</sub> substrates by reactive magnetron sputtering. The Co<sub>3</sub>O<sub>4</sub> film on the MAO substrate exhibits perfect epitaxial growth. However, the Co<sub>3</sub>O<sub>4</sub> film on the PMN-PT substrate presents dislocation defects between the [011] and [112] orientations. The special ferroelectric domain shape surface and phase transition of the PMN-PT substrate induce the higher concentration of Co vacancies in the Co<sub>3</sub>O<sub>4</sub> film, which further reduce the resistivity by several orders of magnitude. The calculated results indicate that introducing Co vacancies can enhance the electrical properties of Co<sub>3</sub>O<sub>4</sub> by building impurity levels near the Fermi level, which is beneficial to form free-moving holes in the valence band. The free-moving holes can also be accumulated/dissipated by the ferroelectric field effect of PMN-PT substrates, leading to upward/downward bending of conduction, valence bands, and low/high-resistance states. This work helps us to tune and improve the electrical properties of Co<sub>3</sub>O<sub>4</sub>.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c05748?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c05748</a>.Cross-sectional STEM image of the Co<sub>3</sub>O<sub>4</sub> (42 nm)/MAO heterostructure, cross-sectional TEM image of the Co<sub>3</sub>O<sub>4</sub> (42 nm)/PMN-PT heterostructure, HADDF-STEM images of the Co<sub>3</sub>O<sub>4</sub> (42 nm) film on the MAO substrate with different multiples, XRD θ–2θ pattern of the Co<sub>3</sub>O<sub>4</sub> (42 nm)/MAO heterostructure, MAO substrate, Co<sub>3</sub>O<sub>4</sub> (42 nm)/STO heterostructure, STO substrate, Co<sub>3</sub>O<sub>4</sub> (42 nm)/PMN-PT heterostructure, and PMN-PT substrate, AFM images of the Co<sub>3</sub>O<sub>4</sub> (14, 28, and 56 nm)/PMN-PT heterostructures, AFM images of the PMN-PT, MAO, and STO substrates, XPS spectra of Co 2p for Co<sub>3</sub>O<sub>4</sub> (42 nm) films on PMN-PT, MAO, and STO substrates, depth-dependent EELS spectra of the Co <i>L</i><sub>2,3</sub> edges for the Co<sub>3</sub>O<sub>4</sub>/PMN-PT heterostructure from the surface to the interface, <i>I</i>–<i>V</i> curves of the Co<sub>3</sub>O<sub>4</sub> (28 and 56 nm)/PMN-PT heterostructures under −0 and +0 kV/cm and light off and on, <i>R</i>–<i>t</i> curves of the Co<sub>3</sub>O<sub>4</sub> (28, 42, and 56 nm)/PMN-PT heterostructures under light off and on, <i>R</i>–<i>E</i> and <i>R</i>–<i>t</i> curves of the Co<sub>3</sub>O<sub>4</sub> (42 nm)/STO heterostructure, unit cell structure of the Co<sub>3</sub>O<sub>4</sub> with one Co<sub>BV</sub><sup>3+</sup>, calculated spin-up band structures of the bulk Co<sub>3</sub>O<sub>4</sub> and Co<sub>3</sub>O<sub>4</sub> with one Co<sub>BV</sub><sup>3+</sup>, and total DOS, partial DOS of Co<sub>B</sub>, partial DOS of Co<sub>A</sub>, and partial DOS of O for bulk Co<sub>3</sub>O<sub>4</sub> (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c05748/suppl_file/am1c05748_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology