Abstract:In this paper, a new method for short pulse generation below 100 ps is reported by controlling the scale of transverse mode distribution by free carrier plasma effect in an oxide-confined VCSEL. A thin tapered oxide layer is the significant structure for controlling transverse mode. That structure provides small built-in transverse optical confinement, which enables changing the transverse mode distribution even with a slight change in the refractive index caused by carrier plasma effect. When a current is injected into the VCSEL, the refractive index around the oxide aperture decreases due to increase in the carrier density, and the transverse mode distribution spreads from center of the current injection region. This reduces the stimulated emission rate and suppresses lasing, and carriers accumulate in QWs. When the current pulse falls, the transverse mode distribution is narrowed as the refractive index increasing, and large stimulated emission rate achieved by accumulated carriers. Thus, Q-switch like single pulse lasing without tailing can be obtained with a conventional VCSEL structure. In a 940 nm top-emitting VCSEL having a thin oxide layer with the oxide aperture area of 29 m2 , the pulse width of 53 ps and the peak power of 50 mW were observed in synchronization with falling of several nanosecond current pulse at room temperature.

Low-switching-energy and high-repetition-frequency all-optical flip-flop operations of a polarization bistable vertical-cavity surface-emitting laser

All-optical Flip-Flop Operation Based on Bistability in V-cavity Laser

Wavelength Switching and All-Optical Flip-Flop in Tunable V-cavity Laser

All-Optical Flip-Flop Memory Based On V-Cavity Laser

High-speed and Low-Energy Flip-Flop Operation of Asymmetric Active-Multimode Interferometer Bi-Stable Laser Diodes

All-optical flip-flop based on vertical cavity semiconductor optical amplifiers.

Investigation of numerical simulation on all-optical flip-flop stability maps of 1550nm vertical-cavity surface-emitting laser

Single-Electrode-Controlled 26x100ghz Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Picosecond optical bistability in metallophthalocyanine-doped polymer film waveguides.

All-optical Bistable Switching and Signal Regeneration in a Semiconductor Layered Distributed-Feedback/fabry–perot Structure

Polarization Switching in 1.3-Μm Quantum Dot Vertical Cavity Surface Emitting Lasers

Experimental and Theoretical Study of Wide Hysteresis Cycles in 1550 Nm VCSELs under Optical Injection.

Control of Polarization Switching in a VCSEL Via Resonant Feedback from a Whispering-Gallery-mode Cavity.

High-power vertical external-cavity surface-emitting laser emitting switchable wavelengths

Stable Circularly-Polarized Emission From Vertical-Cavity Surface-Emitting Lasers

Cascadable All-Optical Inverter Based on a Nonlinear Vertical-Cavity Semiconductor Optical Amplifier.

Low Power Optical Bistability in 1550 Nm VCSOAs

All-optical Signal Processing Based on Ultrafast Nonlinearities in Semiconductor Optical Amplifiers

A new method for short pulse generation below 100 ps by controlling transverse mode distribution with free carrier plasma effect in an oxide-confined VCSEL

Mode-Locked Ring Lasers And Their Application In An All-Optical Flip-Flop Memory

All-optical Oscillator Based on a Single Bistable Vertical-Cavity Semiconductor Optical Amplifier (VCSOA)